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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0051A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend Package 3/ 4/ Q = TO-258 modified E = MILPACK III SFF3810 Series 350 AMP , 75 Volts, 2.5 mΩ Avalanche Rated N-channel TrenchFET Features:  Rugged poly-Si gate  Lowest ON-resistance in the industry  Avalanche rated  Hermetically Sealed, Isolated Package  Low Total Gate Charge  Fast Switching  TX, TXV, S-Level screening available  Improved (RDS(ON) QG) figure of merit Maximum Ratings5/ Symbol Value Units Drain - Source Voltage VDSS 75 V Gate – Source Voltage continuous transient VGS + 20 + 30 V Max. Continuous Drain Current (package limited) @ TC = 25ºC ID1 60 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC @ TC = 125ºC ID2 ID3 350 150 A Max. Avalanche current @ L= 0.1 mH IAR 200 A Single and Repetitive Avalanche Energy @ L= 0.1 mH EAS 3000 mJ Total Power Dissipation @ TC = 25ºC PD 600 W Operating & Storage Temperature TOP & TSTG -55 to 175 ºC Maximum Thermal Resistance (Junction to Case) RθJC 0.5 ºC/W NOTES: MILPACK III (E) TO-258 modified (Q) *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0051A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF3810 Series Electrical Characteristics5/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 3 mA BVDSS 75 80 –– V Drain to Source On State Resistance VGS = 10V, ID = 125A, Tj= 25oC VGS = 15V, ID = 125A, Tj=25oC VGS = 10V, ID = 125A, Tj= 175oC RDS(on) 2.5 mΩ Gate Threshold Voltage VDS = VGS, ID = 8.0mA, Tj= 25oC VDS = VGS, ID = 8.0mA, Tj= 125oC VDS = VGS, ID = 8.0mA, Tj= -55oC VGS(th) 2.5 1.5 3.6 3.0 5.0 V Gate to Source Leakage VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS ±200 –– nA Zero Gate Voltage Drain Current VDS = 75V, VGS = 0V, Tj = 25oC VDS = 75V, VGS = 0V, Tj = 150oC IDSS 0.06 150 2000 μA μA Forward Transconductance VDS = 10V, ID = 60A, Tj = 25oC gfs 65 100 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 37.5V ID = 200A Qg Qgs Qgd 550 180 140 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V GS = 10V VDS = 37.5V ID = 200A RG = 1.0Ω, pw= 3us td(on) tr td(off) tf nsec Diode Forward Voltage IF = 100A, VGS = 0V VSD –– 0.90 1.25 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 150A, di/dt = 100A/usec trr1 Irm1 Qrr1 150 360 nsec A nC Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 4.15 530 nF nF pF MILPACK III (E) TO-258 mod (Q) TOLERANCES: .XXX ± .010 PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-258 mod Pin 1 Pin 2 Pin 3 MILPACK III Pin 1 Pin 2 Pin 3