FT0030 SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0030A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254 TO-254Z Note 1: maximum current limited by package configuration SFF44N50M SFF44N50Z

25 AMP , 500 Volts, 110 mΩ

Features:

  • Rugged poly-Si gate
  • Lowest ON-resistance in the industry
  • Avalanche rated
  • Hermetically Sealed, Isolated Package
  • Low Total Gate Charge
  • Fast Switching
  • TX, TXV, S-Level screening available
  • Improved (R DS(ON) QG) figure of merit Maximum Ratings Symbol Value Units Drain - Source Voltage VDSS 500 V Gate – Source Voltage continuous transient VGS ±20 ±30 V Max. Continuous Drain Current (package limited) @ TC = 25ºC @ TC = 125ºC ID1 ID2 12 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 35 A Max. Avalanche current @ L= 0.1 mH IAR 20 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS / EAR 1100 / 1 mJ Total Power Dissipation @ TC = 25ºC PD 125 W Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) Rjc 1.0 (typ.0.75) ºC /W TO254 (M) TO254Z (Z)

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0030A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF44N50M SFF44N50Z Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 500 530 –– V Drain to Source On State Resistance VGS = 10V, ID = 20A, Tj= 25oC VGS = 10V, ID = 12A, Tj=125oC VGS = 10V, ID = 20A, Tj= 150oC RDS(on) 100 230 270 110 mΩ Gate Threshold Voltage VDS = VGS, ID = 1.8mA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= -55oC VDS = VGS, ID = 250μA, Tj= 125oC VGS(th) 2.1 3.0 2.7 3.2 1.9 3.9 V Gate to Source Leakage VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS ±100 –– nA Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V, Tj = 25oC VDS = 500V, VGS = 0V, Tj = 125oC VDS = 500V, VGS = 0V, Tj = 150oC IDSS 0.01 2.0 250 μA μA μA Forward Transconductance VDS = 10V, ID = 20A, Tj = 25oC gfs 10 30 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 380V ID = 32A Qg Qgs Qgd 175 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 380V ID = 32A RG = 2.7Ω, pw= 3us td(on) tr td(off) tf nsec Diode Forward Voltage IF = 32A, VGS = 0V VSD –– 1.0 1.5 V Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 32A, di/dt = 100A/usec trr IRM(rec) Qrr 540 nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 4500 540 100 pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3