FT0001 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC. SFF75N06-28 FEATURES: DATA SHEET #: FT0001A MAXIMUM RATINGS V GS ±20 VoltsGate to Source Voltage ID 30Continuous Drain Current @ TC = 25oC Drain to Source Voltage V DS 100 Amps Volts Watts
- Rugged construction with poly silicon gate
- Low RDS (on) and high transconductance
- Excellent high temperature stability
- Very fast switching speed
- Fast recovery and superior dv/dt performance
- Increased reverse energy capability
- Low input transfer capacitance for easy paralleling
- Hermetically sealed surface mount package
- TX, TXV and Space Level screening available
28 PIN CLCC
30 AMP 1/
60 VOLTS
Total Device Dissipation @ TC = 25oC PD 35 Thermal Resistance, Junction to Case (All Four) R 2JC T op & T stg -55 to +150Operating and Storage Temperature oC DESIGNER'S DATA SHEET
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. oC/W3.5 CHARACTERISTIC SYMBOL VALUE UNIT PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GA TE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to mini- mize RDS (on) V DG 6060606060 VoltsDrain to Gate Voltage (RGS = 1.0 mS)
SOLID STATE DEVICES, INC. SFF75N06-28 PRELIMINARY Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ T J =25oC (Unless Otherwise Specified) VDrain to Source Breakdown Voltage (VGS =0 V , ID =250:A) -BV DSS - RATING SYMBOL MIN TYP MAX UNIT m S Drain to Source ON State Resistance 2/ (VGS = 10 V) R DS(on) VGate Threshold Voltage (VDS =VGS, ID =250:A) -V GS(th) 42 S(É) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) 35gfs -15 Zero Gate Voltage Drain Current (VDS =80% rated VDS, VGS =0 V , TA = 25oC ) (VDS =80% rated VDS, VGS =0 V , TA = 125oC ) -IDSS Gate to Source Leakage Forward Gate to Source Leakage Reverse -IGSS 100 100 -At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS =10 V olts 50% rated VDS Rated ID Qg Qgs Qgd 100 nsec Turn on Delay Time Rise Time Turn off DELAY Time Fall Time VDD =50% rated VDS rated ID RG = 6.2 S t d (on) tr td (off) tf 130 V1.47V SD 1.6- Diode Reverse Recovery Time Reverse Recovery Charge 70trr 150- TJ =25oC IF = 10A di/dt = 100A/:sec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V olts VDS =25 V olts f =1 MHz Ciss Coss Crss 2600 700 260 2900 1100 275 pF nsec For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. Diode Forward Voltage (IS = rated ID , VGS = 0V , TJ = 25oC) nC nA 100 60% of Rated ID, TC = 25oC Rated ID, TC = 25oC 60% of Rated ID, TC = 150oC NOTES: 1/ Die Rating: 75Amps. 2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize R DS(on) and maximize current carrying capability.