FSYC9055D INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 59A, -60V, rDS(ON) = 0.027Ω
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
  • Photo Current - 6nA Per-RAD(Si)/s Typically
  • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14Neutrons/cm2g Formerly available as type TA17750.

Description

The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hard- ness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numer- ous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc- ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet. Symbol Package SMD-2

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSYC9055D1 10K TXV FSYC9055D3 100K Commercial FSYC9055R1 100K TXV FSYC9055R3 100K Space FSYC9055R4 G D S CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1999 File Number 4525.1 [ /Title (FSYC 9055D, FSYC 9055R) /Sub- ject (Radia- tion Hard- ened, SEGR Resis- tant Chan- nel Power MOS- FETs) /Autho r () /Key- words (Radia- tion Hard- ened, SEGR Resis- tant P- Chan- nel Power MOS- FETs) /Cre- ator () /DOCI OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PR ODUCT FSTYC9055D, FSTYC9055R

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYC9055D, FSYC9055R UNITS Continuous Drain Current Maximum Power Dissipation (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 1mA, VGS = 0V -60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 1mA TC = 125oC -1.0 - - V Zero Gate Voltage Drain Current I DSS VDS = -48V, VGS = 0V TC = 25oC- - 2 5 µA TC = 125oC - - 250 µA Gate to Source Leakage Current I GSS VGS =±20V T C = 25oC - - 100 nA TC = 125oC - - 200 nA Drain to Source On-State Voltage V DS(ON) VGS = -12V, ID = 59A - - -1.79 V Drain to Source On Resistance r DS(ON)12 ID = 38A, VGS = -12V TC = 25oC - 0.017 0.027 Ω TC = 125oC - - 0.043 Ω Turn-On Delay Time t d(ON) VDD = -30V, ID = 59A, R L = 0.51Ω , VGS = -12V, R GS = 2.35Ω - - 55 ns Rise Time t r - - 35 ns Turn-Off Delay Time t d(OFF) - - 85 ns Fall Time t f - - 35 ns Total Gate Charge Q g(TOT) VGS = 0V to -20V VDD = -30V, ID = 59A - - 280 nC Gate Charge at 12V Q g(12) VGS = 0V to -12V - 140 160 nC Threshold Gate Charge Q g(TH) VGS = 0V to -2V - - 17 nC Gate Charge Source Q gs -3 8 4 9 n C Gate Charge Drain Q gd -2 6 3 8 n C Plateau Voltage V (PLATEAU) ID = 59A, VDS = -15V - -6 - V Input Capacitance C ISS VDS = -25V, VGS = 0V, f = 1MHz - 6100 - pF Output Capacitance C OSS - 2200 - pF Reverse Transfer Capacitance C RSS - 300 - pF Thermal Resistance Junction to Case R θJC - - 0.77 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD ISD = 59A -0.6 - -1.8 V Reverse Recovery Time t rr ISD = 59A, dISD /dt = 100A/µs - - 120 ns FSYC9055D, FSYC9055R

  1. Insitu Gamma bias must be sampled for both V
  2. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
  3. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current I GSS VGS =±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current I DSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance r DS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage V GS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress V GS = -30V, t = 250µsV GS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25 oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA V DS = -48V, t = 10ms 9.0 A Unclamped Inductive Switching I AS VGS(PEAK) = -15V, L = 0.1mH 177 A Thermal Response ΔVSD tH = 10ms; VH = -25V; IH = 4A 65 mV Thermal Impedance ΔVSD tH = 500ms; VH = -20V; IH = 4A (Heat Sink Required) 135 mV FSYC9055D, FSYC9055R

Rad Hard Data Packages - Harris Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSYC9055D, FSYC9055R

FSYC9055D, FSYC9055R SMD-2

3 PAD CERAMIC LEADLESS CHIP CARRIER

D A D 1 b D 2 E 1 - GATE 2 - SOURCE 3 - DRAIN SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.129 0.139 3.27 3.53 - b 0.135 0.145 3.43 3.68 - D 0.520 0.530 13.20 13.46 - D 1 0.435 0.445 11.05 11.30 - D 2 0.115 0.125 2.92 3.17 - E 0.685 0.695 17.40 17.65 - E1 0.470 0.480 11.94 12.19 - E2 0.152 0.162 3.86 4.11 - NOTES: 1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98.