FSX017WF FUJITSU | Alldatasheet

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Technical content

Edition 1.2 July 1999 FSX017WF General Purpose GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 1.0 -65 to +175 175 Tc = 25°C V V W Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS 35 55 75 -5 0 - -0.7 -1.2 -1.7 2.5 - -5.0 -- - 10.5 - VDS = 3V, IDS = 2.7mA VDS = 3V, IDS = 10mA f = 8GHz f = 4GHz f = 8GHz f = 12GHz f = 4GHz f = 8GHz f = 12GHz VDS = 8V, IDS = 0.7IDSS VDS = 8V, IDS = 0.7IDSS Channel to Case G.C.P.: Gain Compression Point VDS = 3V, IDS = 27mA VDS = 3V, VGS = 0V IGS = -2.7µA mA mS V dB - 21.5 - dBm 20.5 21.5 - dBm - 20.5 - dBm - 15.0 - dB 10.0 11.0 - dB - 7.5 - dB - 120 150 °C/W dB V gm Vp VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) CASE STYLE: WF

DESCRIPTION

The FSX017WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

FEATURES

  • Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz
  • High Power Gain: G1dB=11dB (Typ.)@8.0GHz
  • Hermetic Metal/Ceramic Package
  • Proven Reliability

OUTPUT POWER vs. INPUT POWER VDS = 8V IDS = 0.5 IDSS -4 -2 0 2 4 6 8 10 12 Input Power (dBm) Output Power (dBm) POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 0.6 0.4 0.2 1.0 0.8 0 50 100 150 200 24 68 1 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) Drain Current (mA) VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V ηadd Pout f=4GHz f=4GHz 8GHz 8GHz 12GHz 12GHz ηadd (%) P1dB vs. VDS f = 8GHz IDS = 0.7 IDSS 45678 Drain-Source Voltage (V) P1dB (dBm)

+j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 SCALE FOR |S12| 25010 25 50Ω SCALE FOR |S21| 0.5GHz 0.5GHz 10 0.1 0.2 1818 16 14 12 20.5GHz 0.5GHz FSX017WF General Purpose GaAs FET S-PARAMETERS VDS =8V, IDS = 35mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 1.0 Min. (0.039) 1.0 Min. (0.039) 0.8±0.1 (0.031) 2.5 Max. (0.098) 2.5±0.15 (0.098) 0.6 (0.024) 0.1±0.05 (0.004) 2.5 (0.098) 6.1±0.1 (0.240) 8.5±0.2 (0.335) 2-ø1.6±0.01 (0.063) 1: Gate 2: Source (Flange) 3: Drain 4: Source (Flange) Unit: mm (Inches) Case Style "WF" Metal-Ceramic Hermetic Package