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Technical content

Features

  • High Surge Capability TO-249AB Package
  • Isolated to Plate
  • Not ESD Sensitive Parameter Symbol FST10045 FST10060 Unit Repetitive peak reverse voltage VRRM 45 60 V RMS reverse voltage VRMS 32 42 V DC blocking voltage VDC 45 60 V Silicon Power Schottky Diode
  • Types from 45 V to 100V VRRM FST10045 thru FST100100 FST100100 FST10080 Maximum ratings, at Tj = 25 °C, unless otherwise specified 100 10080 Conditions DC blocking voltage VDC 45 60 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol FST10045 FST10060 Unit Average forward current (per pkg) IF(AV) 100 100 A Maximum instantaneous forward voltage (per leg) 0.70 0.75 10 10 30 30 Thermal characteristics Thermal resistance, junction - case (per leg) RΘJC 1.0 1.0 °C/W Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 125 °C 100 100 Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 1000 1000 1000 1000 A Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) I R VF Tj = 100 °C Tj = 25 °C IFM = 50 A, Tj = 25 °C 10 10 Conditions -55 to 150 FST100100 FST10080 1.0 Tj = 150 °C 1.0 0.84 0.84 mA V -55 to 150 10080 -55 to 150 -55 to 150 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1

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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FST10045 thru FST100100 F H P J G C B A L E Q M R N D K 123 Inches Millimeters Min Max Min Max A 1.995 2.005 50.67 50.93 B 0.300 0.325 7.62 8.26 C 0.495 0.505 12.57 12.83 D 0.182 0.192 4.62 4.88 E 0.990 1.010 25.15 26.65 F 2.390 2.410 60.71 61.21 G 1.495 1.525 37.90 38.70 H 0.114 0.122 2.90 3.10 K 0.256 0.275 6.5 7.0 L 0.490 0.510 12.45 12.95 M 0.330 0.350 8.38 8.90 N 0.175 0.195 4.45 4.95 P 0.035 0.045 0.89 1.14 R 0.445 0.455 11.30 11.56 Q 0.890 0.910 22.61 23.11 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3