FSRV3.3-4 FUTUREWAFER | Alldatasheet

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FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw SOT23-6L Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Value Units Peak Pulse Power P PP 350 Watts Tp = 8/20us Peak Pulse Current I PP 14 A Electrostatic Discharge Contact V ESD 30 KV Air Operating Temperature T J -55~150 °C Storage Temperature T STG 1. Applications

  • Personal Digital Assistance
  • Wireless System
  • DVI
  • High Speed Data Line
  • Ethernet
  • USB 2.0 Power and Data Line Protection 2. Feature
  • With TVS Diode
  • ESD Protection:Level 4
  • Low Clamping Voltage
  • 350 Watts Peak Pulse Power Per Line
  • Ultra Low Capacitance:3pf Max.(Any I/O to GND.)
  • Protection 4 lines I/O port 3. IEC Compatibility
  • EN61000-4
  • 61000-4-2(ESD):LeveL 4,Contact:±25KV,Air:±30KV
  • 61000-4-5(Surge):14A,8/20us 4. Mechanical Characteristics
  • Molded JEDEC SOT23-6L Package
  • Packing: Tape and Reel
  • Flammability rating UL 94V-0
  • Halogen Free 5. Device Characteristics

FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw Parameter Symbol Condition Min. Typ. Max. Units Reverse Stand-off Voltage V RWM Pin 5 to 2 - - 3.3 V Reverse Breakdown Voltage V BR IZ = 1mA Pin5 to 2 4.5 - 6.5 Forward Voltage V F IF = 15mA,Pin 2 to Pin 5. - - 1.0 Clamping Voltage V C IPP = 5A tp = 8/20us - 6 - IPP = 14A tp = 8/20us - - 25 Reverse Leakage Current I R Pin 5 to Pin 2. - - 0.9 uA C I/O Vdc = 0V,f = 1MHZ - 3 3.5 pF Junction Capacitance C I/O-I/O - 1.5 - 6. Electrical Characteristics 7. Rating and Characteristic Curve FSRV3.3-4 Fig 1 Peak Pulse Power vs Pulse Time Time-Pulse Duration (us) PPP-Peak Pulse Current (W) 350W,8/20uS

FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw 8. Electrical Characteristics Fig 2 Clamping Voltage VC Map Pin5 to 2 Peak Pulse Current, IPP(A) Clamping Voltage VC,V Fig 3 Normalized Capacitance vs.Reverse Voltage Capacitance cj(ρf) Reverse Voltage VR,V Fig. 4 Power Derating Curve % of Rated power Ambient Temp,TA(°C) Time (us) Percent of IPP Waveform parameter tr=8us td=20us tt Peak Value IPP Td=TI IPP/2 Fig. 5 Pulse Waveform

FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw Futurewafer Technology Co., Ltd 9. Soldering Parameters Document Number:F120251 Revision:09-Apr-2020 Version:B

FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw Symbol Millimeters MIN NOM MAX A - - 1.30 A1 0.04 0.07 0.10 A2 1.05 1.10 1.15 A3 0.63 0.65 0.68 b 0.36 - 0.50 b1 0.36 0.38 0.45 c 0.14 - 0.20 c1 0.14 0.15 0.16 D 2.82 2.87 2.90 E 2.65 2.80 2.95 E1 1.56 1.62 1.64 e 0.93 0.95 0.98 e1 1.85 1.90 1.95 L 0.40 0.45 0.50 L1 0.59 REF L2 0.25 BSC Unit : mm 10. Package Information-SOT23-6 11. Suggest Pad Layout-SOT23-6

FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw 13. History Version Date File No. Recording Basis A 17-Jun-2017 New Create Market F120251 2.0 28-Oct-2021 Update Version System Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 Tel ：+886-3-3350161/FAX ：+886-3-33501721cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan Part Number Component Package Quantity Packaging Option Marking FSRV3.3-4 SOT23-6L 3,000PCS Tape&reel-8mm tape / 7”reel V33 12. Ordering Information