FSQ211 ONSEMI | Alldatasheet
Document overview
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Technical content
To learn more about ON Semiconductor, please visit our website at www.onsemi.com Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ211 Rev. 1.0.0 FSQ211 ⎯ Green Mode Fairchild Power Switch (FPSTM) FSQ211 Green Mode Fairchild Power Switch (FPSTM)
Features
Internal Avalanche-Rugged SenseFET Precision Fixed Operating Frequency (67KHz) Burst-Mode Operation Internal Start-up Circuit Pulse-by-Pulse Current Limiting Overload Protection (OLP) Internal Thermal Shutdown Function (TSD) Auto-Restart Mode Under-Voltage Lockout (UVLO) with Hysteresis Built-in Soft-Start Secondary-Side Regulation
Applications
Charger & Adapter for Mobile Phone, PDA, & MP3 Auxiliary Power for White Goods, PC, C-TV, & Monitor Related Application Notes AN-4137 Design Guidelines for Off-line Flyback Converters using FPS™ AN-4141 Troubleshooting and Design Tips for Fairchild Power Switch (FPS™) Flyback Applications AN-4147 Design Guidelines for RCD Snubber of Flyback AN-4134Design Guidelines for Off-line Forward Converters using FPS™ AN-4138Design Considerations for Battery Charger Using Green Mode Fairchild Power Switch (FPS™)
Description
The FSQ211 consists of an integrated Pulse Width Modulator (PWM) and SenseFET, specifically designed for high-performance, off-line Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high-voltage power switching regulator that combines a VDMOS SenseFET with a voltage mode PWM control block. The integrated PWM controller features include a fixed oscillator, Under Voltage Lockout (UVLO) protection, Leading Edge Blanking (LEB), an optimized gate turn-on/turn-off driver, Thermal Shutdown (TSD) protection, and temperature compensated precision-current sources for loop compensation and fault protection circuitry. When compared to a discrete MOSFET and controller or RCC switching converter solution, the FSQ211 device reduces total component count and design size and weight, while increasing efficiency, productivity, and system reliability. This device provides a basic platform well suited for cost-effective flyback converters.
Ordering Information
Part Number Package Top Mark BV DSS f OSC R DS(ON) FSQ211 8DIP Q211 650V 67KHz 18Ω FSQ211L 8LSOP Q211L 650V 67KHz 18Ω FPSTM is a trademark of Fairchild Semiconductor Corporation
Figure 3. Pin Configuration (Top View) 1 GND Ground. SenseFET source terminal on primary side and internal control ground.
2 VCC
and device power is supplied via the auxiliary transformer winding.
3 VFB
conditions, but allows the protection mechanism to operate under true overload conditions.
5 Vstr
trace connecting these pins to the transformer decreases leakage inductance.
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ211 Rev. 1.0.0 4 FSQ211 ⎯ Green Mode Fairchild Power Switch (FPSTM) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Parameter Value Unit VDRAIN Drain Pin Voltage 650 V VSTR Vstr Pin Voltage 650 V VDG Drain-Gate Voltage 650 V VGS Gate-Source Voltage ±20 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 to V STOP V PD Total Power Dissipation 1.40 W TJ Operating Junction Temperat ure Internally limited °C TA Operating Ambient Tem perature -25 to +85 °C TSTG Storage Temperature -55 to +150 °C Notes: 1. Repetitive rating: Puls e width is limited by maximum junction temperature. 2. L = 24mH, starting T J = 25°C. Thermal Impedance TA=25°C unless otherwise specified. Symbol Parameter Value Unit 8DIP θJA Junction-to-Ambient Thermal Impedance(3) 89 °C/W θJC Junction-to-Case Thermal Impedance(4) 14 °C/W Notes: 3. Free standing with no heatsink; without copper clad. Measurement condition – Just before junction temperature TJ enters into OTP. 4. Measured on the DRAIN pin cl ose to plastic interface. 5. All items are tested with the JE DEC standards: JESD 51-2 and 51-10 (DIP).
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ211 Rev. 1.0.0 5 FSQ211 ⎯ Green Mode Fairchild Power Switch (FPSTM)
Electrical Characteristics
TA=25°C unless otherwise specified, Symbol Parameter Conditions Min. Typ. Max. Unit SENSEFET SECTION VDS=650V, VGS=0V 25 IDSS Zero-Gate-Voltage Drain Current VDS=520V, VGS=0V, TC=125°C 200 µA RDS(ON) Drain-Source On-State Resistance (6) V GS=10V, ID=0.2A 18 25 Ω gfs Forward Trans-Conductance V DS=50V, ID=0.2A 1.0 1.3 S CISS Input Capacitance 162 COSS Output Capacitance 18 CRSS Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz 3.8 pF CONTROL SECTION fOSC Switching Frequency 61 67 73 KHz ΔfOSC Switching Frequency Variation (7) -25°C ≤ TA ≤ 85°C ±5 ±10 % DMAX Maximum Duty Cycle 60 67 74 % VSTART V FB=GND 8 9 10 V VSTOP UVLO Threshold Voltage VFB=GND 6 7 8 V IFB Feedback Source Current 0V ≤ VFB ≤ 3V 0.35 0.40 0.45 mA tS/S Internal Soft-Start Time 10 15 20 ms BURST-MODE SECTION VBURH 0.6 0.7 0.8 V VBURL TJ=25°C 0.45 0.55 0.65 V VBUR(HYS) Burst-Mode Voltage Hysteresis 150 mV PROTECTION SECTION ILIM Peak Current Limit di/d t= 65mA/µs 0.32 0.38 0.44 A TSD Thermal Shutdown Temperature (8) 125 145 °C VSD Shutdown Feedback Volt age 4.0 4.5 5.0 V IDELAY Shutdown Delay Current 3V ≤ VFB ≤ VSD 4 5 6 µA TOTAL DEVICE SECTION IOP Operating Supply Current (control part only) V CC ≤ 16V 1.5 3.0 mA ICH Start-Up Charging Current V CC=0V , VSTR=50V 450 550 650 µA Notes: 6. Pulse test: Pulse width ≤ 300us, duty ≤ 2%. 7. These parameters, alt hough guaranteed, are tested in EDS (wafer test) process. 8. These parameters, al though guaranteed, are not 100% tested in production.
4.1 Overload Protection (OLP): Overload is defined as
to charge CFB from 3V to 4.5V with 5µA current source. Figure 18. Overload Protection (OLP)
4.2 Thermal Shutdown (TSD): The SenseFET and the
- Soft-Start: The FPS has an internal soft-start circuit
Figure 19. Internal Soft-Start
- Burst Operation: To minimize the power dissipation
when the feedback voltage drops below V BURL (0.55V). start to drop. This causes the feedback voltage to rise. Once is passes V BURH (0.70V), switching starts again. The feedback voltage falls and the process repeats. Figure 20. Burst Operation Block Figure 21. Burst Operation Function
0.070 0.045 1.78 1.14 0.140 0.125 3.56 3.17 0.021 0.015 0.53 0.38 0.135 0.125 3.43 3.18 7° TYP 0.015 0.38 MIN 0.210 5.33 MAX 0.100 2.54 C 7° TYP 0.43 10.92 MAX 0.015 0.010 0.381 0.254 0.060 1.52 MAX 0.300 7.62 0.320 0.300 8.13 7.62 0.255 0.245 6.48 6.22 0.036 0.9 TYP 0.400 0.373 10.16 9.47 0.092 2.337 PIN #1 A B R0.032 0.813 PIN #1 TOP VIEW, OPTION 1 FRONT VIEW SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS-001, VARIATION BA B. CONTROLLING DIMENSIONS ARE IN INCHES. REFERENCE DIMENSIONS ARE IN MILLIMETERS. C DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCHES OR 0.25MM. D DOES NOT INCLUDE DAMBAR PROTRUSIONS. DAMBAR PROTRUSIONS SHALL NOT EXCEED 0.010 INCHES OR 0.25MM. E. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009 F. DRAWING FILENAME: MKT-N08Erev8 TOP VIEW, OPTION 2 C D C 0.001 [0.025] M C
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