FSQ110 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

„ Internal Avalanche-Rugged 650V SenseFET „ Consumes only 0.65W at 230 VAC & 0.3W Load with Burst-Mode Operation „ Precision Fixed Operating Frequency: 100kHz „ Internal Start-up Circuit and Built-in Soft-Start „ Pulse-by-Pulse Current Limiting and Auto-Restart Mode „ Over-Voltage Protection (OVP), Overload Protection (OLP), Internal Thermal Shutdown Function (TSD) „ Under-Voltage Lockout (UVLO) „ Low Operating Current: 3mA „ Adjustable Peak Current Limit

Applications

„ SMPS for STB, Low-cost DVD Related Application Notes „ AN-4134: Design Guidelines for Off-line Forward Converters Using Fairchild Power Switch (FPS™) „ AN-4137: Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS™) „ AN-4141: Troubleshooting and Design Tips for Fairchild Power Switch (FPS™) Flyback Applications „ AN-4147: Design Guidelines for RCD Snubber of Flyback

Description

The FSQ110 consists of an integrated, current-mode, Pulse Width Modulator (PWM) and an avalanche-rugged 650V SenseFET. It is specifically designed for high- performance off-line Switch-Mode Power Supplies (SMPS) with minimal external components. The integrated PWM controller features include: a fixed- frequency generating oscillator, Under-Voltage Lockout (UVLO) protection, Leading-Edge Blanking (LEB), an optimized gate turn-on/ turn-off driver, Thermal Shutdown (TSD) protection, and temperature- compensated precision current sources for loop compensation and fault protection circuitry. Compared to a discrete MOSFET and controller or RCC switching converter solution, the FSQ110 reduces total component count, design size, and weight while increasing efficiency, productivity, and system reliability. These devices provide a basic platform that is well suited for the design of cost-effective flyback converters.

Ordering Information

All package are lead free per JEDEC: J-STD-020B standard. 8-DIP Product Number Package Marking Code BV DSS fOSC RDS(ON) (MAX.) FSQ110 8DIP Q110 650V 100kHz 19 Ω

Figure 3. Pin Configuration (Top View) 1G N D Ground. SenseFET source terminal on primary side and internal control ground. Feedback. The feedback voltage pin is the non-inverting input to the PWM comparator. lows the protection mechanism to operate under true overload conditions. tor and any external resistor to GND on this pin. This determines the peak current limit. If this pin is tied to VCC or left floating, the typical peak current limit is 0.7A. the VCC pin and ground. Once the VCC reaches 12V, the internal switch is opened. 6D SenseFET Drain. High-voltage power SenseFET drain connection. 7D SenseFET Drain. High-voltage power SenseFET drain connection. 8D SenseFET Drain. High-voltage power SenseFET drain connection.

FSQ110 — Green Mode Fairchild Power Switch (FPS™) © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ110 Rev. 1.0.0 4 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25°C, unless otherwise specified. Notes: 5. Repetitive rating: Pulse width is limited by maximum junction temperature. 6. L = 24mH, starting TJ = 25°C. Thermal Impedance TA = 25°C, unless otherwise specified. All items are tested with the standards JESD 51-2 and 51-10 (DIP). Notes: 7. Free standing with no heatsink; without copper clad. (Measurement Condition - Just before junction temperature T J enters into OTP.) 8. Measured on the DRAIN pin close to plastic interface. Symbol Characteristic Value Unit VDRAIN Drain Pin Voltage 650 V VSTR Vstr Pin Voltage 650 V IDM Drain Current Pulsed(5) 1.5 A EAS Single Pulsed Avalanche Energy(6) 10 mJ VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 to V CC V PD Total Power Dissipation 1.40 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 to +85 °C TSTG Storage Temperature -55 to +150 °C Symbol Parameter Value Unit θJA Junction-to-Ambient Thermal Resistance(7) 88.84 °C/W θJC Junction-to-Case Thermal Resistance(8) 13.94 °C/W

FSQ110 — Green Mode Fairchild Power Switch (FPS™) © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ110 Rev. 1.0.0 5

Electrical Characteristics

TA = 25°C unless otherwise specified. Notes: 10. These parameters, although guaranteed, are not 100% tested in production. 11. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%. 12. The ESD level of an existing product can be applied to FSQ110 because it has same ESD protection circuit. Symbol Parameter Condition Min. Typ. Max. Unit SenseFET Section(10) IDSS Zero-Gate-Voltage Drain Current VDS = Max. Rating VGS = 0V 25 μA VDS = 0.8 Max. Rating VGS = 0V, TC = 125°C 200 RDS(ON) Drain-Source On-State Resistance(11) VGS = 10V, ID = 0.5A 14 19 Ω CISS Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz 162 pFCOSS Output Capacitance 18 CRSS Reverse Transfer Capacitance 3.8 td(on) Turn-On Delay Time VDS = 325V, ID = 1A 9.5 ns tr Rise Time 19 td(off) Turn-Off Delay Time 33 tf Fall Time 42 Control Section fOSC Switching Frequency 92 100 108 KHz ΔfOSC Switching Frequency Variation(10) -25°C ≤ TA ≤ 85°C± 5 ± 1 0 % DMAX Maximum Duty Cycle Measured at 0.1 x V DS 55 60 65 % VSTART UVLO Threshold Voltage VFB = GND 11 12 13 V VSTOP V FB = GND 7 8 9 IFB Feedback Source Current V FB = GND 0.7 0.9 1.1 mA tS/S Internal Soft-Start Time (10) VFB = 4V 10 ms Burst-Mode Section VBURH Burst-Mode Voltage T J = 25°C 0.5 0.6 0.7 V VBURL 0.3 0.4 0.5 V VBUR(HYS) 100 200 300 mV Protection Section ILIM Peak Current Limit di/dt = 170mA/µs 0.60 0.70 0.80 A tCLD Current Limit Delay Time (10) 600 ns TSD Thermal Shutdown Temperature (10) 125 140 °C VSD Shutdown Feedback Voltage 5.5 6.0 6.5 V VOVP Over-Voltage Protection 18 19 20 V IDELAY Shutdown Delay Current V FB = 4V 3.5 5.0 6.5 μA tLEB Leading-Edge Blanking Time(10) 200 ns Total Device Section IOP Operating Supply Current (control part only) V CC = 14V 1 3 5 mA ICH Start-Up Charging Current V CC = 0V 0.70 0.85 1.00 mA VSTR Vstr Supply Voltage V CC = 0V 24 V

  1. Startup: In previous generations of Fairchild Power

source turns back on if VCC drops below 8V. Figure 13. High-Voltage Current Source

  1. Feedback Control: The FSQ110 employs current-

increases or the output load decreases. Figure 14. Pulse Width Modulation Circuit

  1. Leading-Edge Blanking (LEB): When the internal

LEB) after the SenseFET is turned on.

  1. Protection Circuits: The FPS has several protective

SenseFET until the fault condition is eliminated.

4.1 Overload Protection (OLP): Overload is defined as

from 3V to 6V with 5µA current source. Figure 15. Overload Protection (OLP)

3 OSC

4.2 Thermal Shutdown (TSD): The SenseFET and the

4.3 Over-Voltage Protection (OVP): In the event of a

operation, VCC should be designed to be below 19V.

  1. Soft-Start: The FPS has an internal soft-start circuit

stress on the secondary diode during startup. Figure 16. Soft-Start Function

  1. Burst Operation: To minimize power dissipation in

standby mode, the FPS enters burst-mode operation. feedback voltage drops below V BURL (typically 400mV). Figure 17. Burst Operation Function

  1. Adjusting Peak Current Limit: As shown in Figure

diodes are biased by the main current source of 900µA. Figure 18. Peak Current Limit Adjustment where X is the resistance of the parallel network.

Figure 21. 8-Lead Dual In-Line Package (DIP)

5.08 MAX

0.33 MIN

B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.

FSQ110 — Green Mode Fairchild Power Switch (FPS™) © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ110 Rev. 1.0.0 12