FSQ0565RS ONSEMI | Alldatasheet
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Publication Order Number: FSQ0565RS/D FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation © 2008 Semiconductor Components Industries, LLC. October-2017, Rev. 3 FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation - Low EMI and High Efficiency
Features
! Optimized for Quasi-Resonant Converters (QRC) ! Low EMI through Variable Frequency Control and AVS (Alternating Valley Switching) ! High-Efficiency through Minimum Voltage Switching ! Narrow Frequency Variation Range over Wide Load and Input Voltage Variation ! Advanced Burst-Mode Operation for Low Standby Power Consumption ! Simple Scheme for Sync Voltage Detection ! Pulse-by-Pulse Current Limit ! Various Protection Functions: Overload Protection (OLP), Over-Voltage Protection (OVP), Internal Thermal Shutdown (TSD) with Hysteresis, Output Short Protection (OSP) ! Under-Voltage Lockout (UVLO) with Hysteresis ! Internal Startup Circuit ! Internal High-Voltage Sense FET (650V) ! Built-in Soft-Start (17.5ms)
Applications
! Power Supply for LCD TV and Monitor, VCR, SVR, STB, and DVD & DVD Recorder ! Adapter
Description
A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ-series is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for quasi-resonant operation and Alternating Valley Switching (AVS). The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout (UVLO), Leading- Edge Blanking (LEB), optimized gate driver, internal soft- start, temperature-compensated precise current sources for a loop compensation, and self-protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the FSQ-series can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform for cost-effective designs of quasi-resonant switching flyback converters.
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation www.onsemi.com
Ordering Information
Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with doubler. 3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature. 4. Maximum practical continuous power in an open-frame design at 50°C ambient. 5. Eco Status, RoHS Application Diagram Figure 1. Typical Flyback Application
Figure 4. Pin Configuration (Top View) 1D r a i n SenseFET Drain. High-voltage power SenseFET drain connection. 2G N D Ground. This pin is the control ground and the SenseFET source. both startup and steady-state operation. protection triggers, which shuts down the power switch. ing. In normal quasi-resonant operation, the threshold of the sync comparator is 1.2V/1.0V. disabled. It is not recommended to connect Vstr and Drain together.
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified. Notes: 6. Repetitive rating: pulse-width limited by maxi mum junction temperature. 7. L=14mH, starting TJ=25°C. Thermal Impedance TA = 25°C unless otherwise specified. Notes: 8. Free standing with no heat-sink unde r natural convection. 9. Infinite cooling condition - refer to the SEMI G30-88. Symbol Parameter Min. Max. Unit Vstr Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 13.0 V VSync Sync Pin Voltage -0.3 13.0 V IDM Drain Current Pulsed 11 A ID Continuous Drain Current(6) TC = 25°C 2.8 A TC = 100°C 1.7 EAS Single Pulsed Avalanche Energy(7) 190 mJ PD Total Power Dissipation (TC=25°C) 45 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 +85 °C TSTG Storage Temperature -55 +150 °C ESD Electrostatic Discharge Capability, Human Body Model 2.0 kV Electrostatic Discharge Capability, Charged Device Model 2.0 Symbol Parameter Package Value Unit θJA Junction-to-Ambient Thermal Resistance(8) TO-220F-6L 50 °C/W θJC Junction-to-Case Thermal Resistance(9) 2.8 °C/W www.onsemi.com
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation
Electrical Characteristics
TA = 25°C unless otherwise specified. Continued on the following page... Symbol Parameter Condition Min. Typ. Max. Unit SENSEFET SECTION BVDSS Drain Source Breakdown Voltage V CC = 0V, ID = 100µA 650 V IDSS Zero-Gate-Voltage Drain Current V DS = 560V 300 µA RDS(ON) Drain-Source On-State Resistance T J = 25°C, ID = 0.5A 1.76 2.20 Ω COSS Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz 78 pF td(on) Turn-On Delay Time VDD = 350V, ID = 25mA 22 ns tr Rise Time VDD = 350V, ID = 25mA 52 ns td(off) Turn-Off Delay Time VDD = 350V, ID = 25mA 95 ns tf Fall Time VDD = 350V, ID = 25mA 50 ns CONTROL SECTION tON.MAX Maximum On Time TJ = 25°C 8.8 10.0 11.2 µs tB Blanking Time TJ = 25°C, Vsync = 5V 13.5 15.0 16.5 µs tW Detection Time Window TJ = 25°C, Vsync = 0V 6.0 µs fS Initial Switching Frequency 59.6 66.7 75.8 kHz ΔfS Switching Frequency Variation(11) -25°C < TJ < 85°C ±5 ±10 % tAVS AVS Triggering Threshold(11) On Time at VIN = 240VDC, Lm = 360μH (AVS triggered when VAVS > spec. and tAVS < spec.) 4.0 µs VAVS Feedback Voltage 1.2 V t SW Switching Time Variance by AVS(11) Sync = 500kHz sine input V FB = 1.2V, tON = 4.0µs 13.5 20.5 µs IFB Feedback Source Current VFB = 0V 700 900 1100 µA DMIN Minimum Duty Cycle VFB = 0V 0 % VSTART UVLO Threshold Voltage 11 12 13 V VSTOP After turn-on 7 8 9 V tS/S Internal Soft-Start Time With free-running frequency 17.5 ms VOVP Over-Voltage Protection (FSQ0565RS) 18 19 20 V VOVP Over-Voltage Protection (FSQ0565RQ) Threshold Voltage V CC = 15V, VFB = 2V 7.4 8 9.6 V tOVP Blanking Time(11) 1.0 1.7 2.4 µs BURST-MODE SECTION VBURH Burst-Mode Voltages TJ = 25°C, tPD = 200ns(10) 0.45 0.55 0.65 V VBURL 0.25 0.35 0.45 V Hysteresis 200 mV www.onsemi.com
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Notes: 10. Propagation delay in the control IC. 11. Guaranteed by design; not tested in production. 12. Includes gate turn-on time. Symbol Parameter Condition Min. Typ. Max. Unit PROTECTION SECTION ILIMIT Peak Current Limit FSQ0565RS T J = 25°C, di/dt = 370mA/µs 2.00 2.25 2.50 A ILIMIT FSQ0565RQ T J = 25°C, di/dt = 370mA/µs 2.64 3.0 3.36 A VSD Shutdown Feedback Voltage VCC = 15V 5.5 6.0 6.5 V IDELAY Shutdown Delay Current VFB = 5V 4 5 6 µA tLEB Leading-Edge Blanking Time(11) 250 ns tOSP Output Short Protection (11) Threshold Time TJ = 25°C OSP triggered when tON < tOSP, VFB > VOSP and lasts longer than tOSP_FB 1.2 1.4 µs VOSP Threshold Feedback Voltage 1.8 2.0 V t OSP_FB Feedback Blanking Time 2.0 2.5 3.0 µs TSD Thermal Shutdown(11) Shutdown Temperature 125 140 155 Hys Hysteresis 60 SYNC SECTION VSH1 Sync Threshold Voltage 1 VCC = 15V, VFB = 2V 1.0 1.2 1.4 V VSL1 0.8 1.0 1.2 tsync Sync Delay Time(11, 12) 230 ns VSH2 Sync Threshold Voltage 2 VCC = 15V, VFB = 2V 4.3 4.7 5.1 V VSL2 4.0 4.4 4.8 VCLAMP Low Clamp Voltage ISYNC_MAX = 800µA, ISYNC_MIN = 50µA 0.0 0.4 0.8 V TOTAL DEVICE SECTION IOP Operating Supply Current VCC = 13V 1 3 5 mA ISTART Start Current VCC = 10V (before VCC reaches VSTART) 350 450 550 µA ICH Startup Charging Current VCC = 0V, VSTR = minimum 50V 0.65 0.85 1.00 mA VSTR Minimum VSTR Supply Voltage 26 V www.onsemi.com
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation www.onsemi.com Comparison Between FSDM0x65RNB and FSQ-Series Differences Between FSQ0565RS and FSQ0565RQ Function FSDM0x65RE FSQ-Series FSQ-Series Advantages Operation Method Constant Frequency PWM Quasi-Resonant Operation ! Improved efficiency by valley switching ! Reduced EMI noise ! Reduced components to detect valley point EMI Reduction Frequency Modulation Reduced EMI Noise ! Valley Switching ! Inherent Frequency Modulation ! Alternate Valley Switching Hybrid Control CCM or AVS Based on Load and Input Condition ! Improves efficiency by introducing hybrid control Burst-Mode Operation Burst-Mode Operation Advanced Burst-Mode Operation ! Improved standby power by advanced burst-mode Strong Protections OLP, OVP OLP, OVP, OSP ! Improved reliability through precise OSP TSD 145°C without Hysteresis 140°C with 60°C Hysteresis ! Stable and reliable TSD operation ! Converter temperature range Function FSQ0565RS FSQ0565RQ Remark ILIM 2.25A 3.0A ! Lower current peak is suitable to reduce conduc- tion loss ! Higher current peak is suitable for handling higher power Over Voltage Protection VCC OVP (triggered by VCC voltage) Sync OVP (triggered by Sync voltage) ! Sync OVP is suitable when VCC voltage is pre reg- ulated.
- Startup: At startup, an internal high-voltage current
CC goes below the stop voltage of 8V. Figure 23. Startup Circuit are typically used to impl ement the feedback network. increased or the output load is decreased. Figure 24. Pulse-Width-Modulation (PWM) Circuit
2.1 Pulse-by-Pulse Current Limit: Because current-
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
LEB) after the SenseFET is turned on.
- Synchronization: The FSQ-series employs a quasi-
winding voltage, as shown in Figure 25. Figure 25. Quasi-Resonant Switching Waveforms
6 VSTR
4 OSC
4.1 Overload Protection (OLP): Overload is defined as
protection circuit should trigger to protect the SMPS. 20 ~ 50ms delay time is typical for most applications. Figure 30. Overload Protection
4.2 Abnormal Over-Current Protection (AOCP): When
Figure 31. Abnormal Over-Current Protection
4.3 Output-Short Protection (OSP): If the output is
shuts down PWM switching until V CC reaches Vstart again. An abnormal condition output short is shown in Figure 32. Figure 32. Output Short Waveforms
4.4.1 V CC Over-Voltage Protection (OVP) of
normal operation, VCC should be designed below 19V.
4.4.2 Sync Over-Voltage Protection (OVP) of
Figure 33. OVP Triggering of FSQ0565RQ
4.5 Thermal Shutdown with Hysteresis (TSD): The
SenseFET and the control IC are built in one package. CC reaches startup voltage (Vstart).
- Soft-Start: The power switch has an internal soft-start
stress on the secondary diode during startup.
- Burst Operation: To minimize power dissipation in stand-
by mode, the power switch enters burst-mode operation. As the load decreases, the feedback voltage decreases. thereby reducing switching loss in standby mode. Figure 34. Waveforms of Burst Operation
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation Typical Application Circuit ! Average efficiency of 25%, 50%, 75%, and 100% load conditions is higher than 80% at universal input ! Low standby mode power consumption (<1W at 230VAC input and 0.5W load) ! Reduce EMI noise through valley switching operation ! Enhanced system reliability through various protection functions ! Internal soft-start (17.5ms) Key Design Notes ! The delay time for overload protection is designed to be about 23ms with C105 of 33nF. If faster/slower triggering of OLP is required, C105 can be changed to a smaller/larger value (e.g. 100nF for 70ms). ! The input voltage of VSync must be between 4.7V and 8V just after MOSFET turn-off to guarantee hybrid control and to avoid OVP triggering during normal operation. ! The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improve surge immunity. 1. Schematic Figure 39. Demo Circuit of FSQ0565RS
Figure 40. Transformer Schematic Diagram of FSQ0565RS
- Electrical Characteristics
FSQ0565RS/RQ Green-Mode Power Switch for Quasi-Resonant Operation 6. Demo Board Part List Part Value Note Part Value Note Resistor C205 47nF/50V Film (Sehwa) R101 1M Ω 1W C301 4.7nF/1kV Y-cap(Samwha) R102 75k Ω 1/2W Inductor R103 43k Ω 1W L201 5µH 5A Rating R104 0Ω jumper L202 5µH 5A Rating R105 100 Ω optional, 1/4W Diode R107 39k Ω 1/4W, 1% D101 IN4007 VISHAY R108 27k Ω 1/4W, 1% D102 UF4004 VISHAY R201 620 Ω 1/4W ZD101 1N4745A 1W 16V Zener Diode (optional) R202 1.2k Ω 1/4W D201 MBRF10H100 10A,100V Schottky Rectifier R203 18k Ω 1/4W, 1% D202 MBRF1060 10A, 60V Schottky Rectifier R204 8k Ω 1/4W, 1% IC R205 8k Ω 1/4W, 1% IC101 FSQ0565RS Power Switch Capacitor IC201 KA431 (TL431) Voltage Reference C101 150nF/275V AC Box Capacitor(PILKOR) IC202 FOD817A Opto-Coupler C102 150nF/275V AC Box Capacitor(PILKOR) Fuse C103 100µF/400V Electrolytic (Samwha) Fuse 2A/250V C104 3.3nF/630V Film (Sehwa) NTC C105 33nF/50V Film (Sehwa) RT101 5D-9 C106 100nF/50V Mono (PILKOR) Bridge Diode C107 47µF/50V Electrolytic (Samyoung) BD101 2KBP06M Bridge Diode C201 1000µF/25V Low-ESR Electrolytic Capacitor(Samwha) Line Filter C202 1000µF/25V Low-ESR Electrolytic Capacitor(Samwha) LF101 30mH C203 2200µF/10V Low-ESR Electrolytic Capacitor(Samwha) Transformer C204 1000µF/10V Low-ESR Electrolytic Capacitor(Samwha) T1 EER3016 Ae=109.7mm www.onsemi.com
Figure 41. 6-Lead, TO-220 Package (Forming)
Figure 42. 6-Lead, TO-220 Package (L-Forming) A) NO PACKAGE STANDARD APPLIES. MOLD FLASH, AND TIE BAR EXTRUSIONS. C) DIMENSIONS ARE IN MILLIMETERS.
0.20 A B
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