FSQ0170RNA_07 FAIRCHILD | Alldatasheet
Document overview
- Manufacturer or author: pROVIDED bY alldatasheet.com(free datasheet download site)
- PDF pages: 17
Technical content
Features
Internal Avalanche Rugged 700V SenseFET Consumes only 0.8W at 230 VAC & 0.5W Load with Burst-Mode Operation Precision Fixed Operating Frequency, 100kHz Internal Start-up Circuit and Built-in Soft-Start Pulse-by-Pulse Current Limiting and Auto-Restart Mode Over-Voltage Protection (OVP), Overload Protection (OLP), Internal Thermal Shutdown Function (TSD) Under-Voltage Lockout (UVLO) Low Operating Current (3mA) Adjustable Peak Current Limit
Applications
Auxiliary Power Supply for PC and Server SMPS for VCR, SVR, STB, DVD & DVCD Player, Printer, Facsimile & Scanner Adapter for Camcorder Related Application Notes AN-4134: Design Guidelines for Off-line Forward Converters Using Fairchild Power Switch (FPS™) AN-4137: Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS™) AN-4141: Troubleshooting and Design Tips for Fairchild Power Switch (FPS™) Flyback Applications AN-4147: Design Guidelines for RCD Snubber of Flyback AN-4148: Audible Noise Reduction Techniques for FPS™ Applications
Description
The FSQ0170RNA, FSQ0270RNA, FSQ0370RNA consists of an integrated current mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V Sense FET. It is specifically designed for high-performance off- line Switch Mode Power Supplies (SMPS) with minimal external components. The integrated PWM controller features include: a fixed-fre quency generating oscillator, Under-Voltage Lockout (UVLO) protection, Leading Edge Blanking (LEB), an optimized gate turn-on/ turn-off driver, Thermal Shutdown (TSD) protection, and temperature compensated prec ision current sources for loop compensation and fault protection circuitry. Compared to a discrete MOSFET and controller or RCC switching converter solu tion, the FSQ0170RNA, FSQ0270RNA, FSQ0370RNA reduces total component count, design size, and weight while increasing efficiency, productivity, and system reliability. These devices provide a basic platform that is well suited for the design of cost-effective flyback converters, as in PC auxiliary power supplies.
Ordering Information
Product Number Package Marking Code BV DSS fOSC RDS(ON) (MAX.) FSQ0170RNA 8DIP Q0170R 700V 100kHz 11 Ω FSQ0270RNA 8DIP Q0270R 700V 100kHz 7.2 Ω FSQ0370RNA 8DIP Q0370R 700V 100kHz 4.75 Ω
Figure 3. Pin Configuration (Top View) supplied via the auxiliary transformer winding. the protection mechanism to operate under true overload conditions. Peak Current Limit. This pin adjusts the peak current limit of the SenseFET. the internal switch is opened. 6D r a i n SenseFET drain. High-voltage power SenseFET drain connection. 7D r a i n SenseFET drain. High-voltage power SenseFET drain connection. 8D r a i n SenseFET drain. High-voltage power SenseFET drain connection.
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 4 Absolute Maximum Ratings The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. TA = 25°C, unless otherwise specified. Notes: 5. Non-repetitive rating: Pulse width is limited by maximum junction temperature. 6. L = 51mH, starting TJ = 25°C. Thermal Impedance TA = 25°C, unless otherwise specified. All items are tested with the standards JESD 51-2 and 51-10 (DIP). Notes: 7. Free standing with no heatsink; without copper clad. (Measurement Condition - Just before junction temperature TJ enters into OTP.) 8. Measured on the DRAIN pin close to plastic interface. 9. Measured on the PKG top surface. Symbol Characteristic Value Unit VDRAIN Drain Pin Voltage 700 V VSTR Vstr Pin Voltage 700 V IDM Drain Current Pulsed(5) FSQ0170RNA 4 A FSQ0270RNA 8 FSQ0370RNA 12 EAS Single Pulsed Avalanche Energy(6) FSQ0170RNA 50 mJ FSQ0270RNA 140 FSQ0370RNA 230 VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 to V CC V PD Total Power Dissipation 1.5 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 to +85 °C TSTG Storage Temperature -55 to +150 °C Symbol Parameter Value Unit θJA Junction-to-Ambient Thermal Resistance(7) 80 °C/W θJC Junction-to-Case Thermal Resistance(8) 20 °C/W θJT Junction-to-Top Thermal Resistance(9) 35 °C/W
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 5
Electrical Characteristics
TA = 25°C unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. Unit SenseFET Section(10) IDSS Zero-Gate-Voltage Drain Current VDS = 700V, VGS = 0V 50 μA VDS = 560V, VGS = 0V, TC = 125°C 200 RDS(ON) Drain-Source On-State Resistance (11) FSQ0170RNA VGS = 10V, ID = 0.5A 8.8 11 ΩFSQ0270RNA 6.0 7.2 FSQ0370RNA 4.0 4.75 CISS Input Capacitance FSQ0170RNA VGS = 0V, VDS = 25V, f = 1MHz 250 pF FSQ0270RNA 550 FSQ0370RNA 315 COSS Output Capacitance FSQ0170RNA 25 FSQ0270RNA 38 FSQ0370RNA 47 C RSS Reverse Transfer Capacitance FSQ0170RNA 10 FSQ0270RNA 17 FSQ0370RNA 9 t d(on) Turn-On Delay Time FSQ0170RNA VDS = 350V, ID = 1.0A ns FSQ0270RNA 20 FSQ0370RNA 11.2 tr Rise Time FSQ0170RNA 4 FSQ0270RNA 15 FSQ0370RNA 34 t d(off) Turn-Off Delay Time FSQ0170RNA 30 FSQ0270RNA 55 FSQ0370RNA 28.2 t f Fall Time FSQ0170RNA 10 FSQ0270RNA 25 FSQ0370RNA 32 Control Section f OSC Switching Frequency 92 100 108 KHz ΔfOSC Switching Frequency Variation(10) -25°C ≤ TA ≤ 85°C± 5 ± 1 0 % DMAX Maximum Duty Cycle Measured at 0.1 x V DS 55 60 65 % DMIN Minimum Duty Cycle 0 0 0 % VSTART UVLO Threshold Voltage VFB = GND 11 12 13 V VSTOP V FB = GND 7 8 9 IFB Feedback Source Current V FB = GND 0.7 0.9 1.1 mA tS/S Internal Soft-Start Time (10) VFB = 4V 10 ms
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 6 Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Notes: 10. These parameters, although guaranteed, are not 100% tested in production. 11. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%. Symbol Parameter Condition Min. Typ. Max. Unit Burst-Mode Section VBURH Burst-Mode Voltage T J = 25°C 0.5 0.6 0.7 V VBURL 0.3 0.4 0.5 V VBUR(HYS) 100 200 300 mV Protection Section ILIM Peak Current Limit FSQ0170RNA di/dt = 170mA/µs 0.70 0.80 0.90 A FSQ0270RNA di/dt = 200mA/µs 0.79 0.90 1.01 FSQ0370RNA di/dt = 240mA/µs 0.97 1.10 1.23 tCLD Current Limit Delay Time (10) 500 ns TSD Thermal Shutdown Temperature (10) 125 140 °C VSD Shutdown Feedback Voltage 5.5 6.0 6.5 V VOVP Over-Voltage Protection 18 19 V IDELAY Shutdown Delay Current V FB = 4V 3.5 5.0 6.5 μA tLEB Leading Edge Blanking Time(10) 200 ns Total Device Section IOP Operating Supply Current (control part only) VCC = 14V 1 3 5 mA ICH Start-Up Charging Current V CC = 0V 0.70 0.85 1.00 mA VSTR Vstr Supply Voltage V CC = 0V 24 V
- Startup: In previous generations of Fairchild Power
source turns back on if VCC drops below 8V. Figure 13. High-Voltage Current Source
- Feedback Control: The 700V FPS series employs
input voltage increases or the output load decreases. Figure 14. Pulse Width Modulation Circuit
- Leading Edge Blanking (LEB): When the internal
LEB) after the Sense FET is turned on.
- Protection Circuits: The FPS has several protective
SenseFET until the fault condition is eliminated.
4.1 Overload Protection (OLP): Overload is defined as
from 3V to 6V with 5µA current source. Figure 15. Overload Protection (OLP)
4.2 Thermal Shutdown (TSD) : The SenseFET and the
3 OSC
4.3 Over-Voltage Protection (OVP): In the event of a
CC should be designed to be below 19V.
- Soft-Start: The FPS has an internal soft-start circuit
stress on the secondary diode during startup. Figure 16. Soft-Start Function
- Burst Operation: To minimize power dissipation in
standby mode, the FPS ent ers burst-mode operation. feedback voltage drops below V BURL (typically 400mV). Figure 17. Burst Operation Function
- Adjusting Peak Current Limit: As shown in Figure
diodes are biased by the main current source of 900µA. Figure 18. Peak Current Limit Adjustment 0.6A by inserting Rx between the IPK pin and the ground. where X represents the resistance of the parallel network.
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 12 Typical Application Circuit High efficiency (> 78% at 115 VAC and 230 VAC input) Low standby mode power consumption (< 0.8W at 230 VAC input and 0.5W load) Enhanced system reliability through various protection functions Internal soft-start (10ms) Line UVLO function can be achieved using external component Key Design Notes The delay time for overload protection is designed to be about 30ms with C8 of 47nF. If faster/slower triggering of OLP is required, C8 can be changed to a smaller/larger value (e.g. 100nF for about 60ms). ZP1, DL1, RL1, RL2, RL3, RL4, RL5, RL7, QL1, QL2, and CL9 build a Line Under-Voltage Lockout block (UVLO). The Zener voltage of ZP1 determines the input voltage that makes FPS turn on. RL5 and DL1 provide a reference voltage from VCC. If the input voltage divided by RL1, RL2, and RL4 is lower than the Zener voltage of DL1, QL1 and QL2 turn on and pull down VFB to ground. An evaluation board and corresponding test report can be provided. 1. Schematic Figure 21. Demo Circuit
Figure 22. Transformer Schematic Diagram
- Electrical Characteristics
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 14 6. Demo Circuit Part List Part Number Value Quantity D escription (Manufacturer) C6, C8 47nF 2 Ceramic Capacitor C1 2.2nF (1KV) 1 AC Cerami c Capacitor(X1 & Y1) C10 1nF (200V) 1 Mylar Capacitor CS1 1.5nF (50V) 1 Ceramic Capacitor C2, C3 22µF (400V) 2 Low Impedance Electrolytic Capacitor KMX series C4, C9 1000µF (16V) 2 Low ESR Electrolytic Capacitor NXC series C5 470µF (10V) 1 Low ESR Electrolytic Capacitor NXC series C7 47µF (25V) 1 General Electrolytic Capacitor CL9 10µF (50V) 1 General Electrolytic Capacitor L1 330µH 1 Inductor L2 1µH 1 Inductor R6 2.4 (1W) 1 Fusible Resistor J1, J2, J4, L3 0 4 Jumper R2 4.7k Ω 1R e s i s t o r R3 560 Ω 1R e s i s t o r R4 100 Ω 1R e s i s t o r R5 1.25k Ω 1R e s i s t o r R11 1.2k Ω 1R e s i s t o r R9 10k Ω 1R e s i s t o r R10 2 Ω 1R e s i s t o r R14 30 Ω 1R e s i s t o r RL3 1k Ω 1R e s i s t o r RL1, RL2 1M Ω 2R e s i s t o r RL4 120k Ω 1R e s i s t o r RL5 30k Ω 1R e s i s t o r RL7 40k Ω 1R e s i s t o r RS1 9 Ω 1R e s i s t o r ZR1 80 Ω 1R e s i s t o r U1 FOD817A 1 IC (Fairchild Semiconductor) U2 TL431 1 IC (Fairchild Semiconductor) U3 FSQ0270RNA 1 IC (Fairchild Semiconductor) QL1 2N2907 1 IC (Fairchild Semiconductor) QL2 2N2222 1 IC (Fairchild Semiconductor) D2, D3, D4, D5, D6, DS1 1N4007 6 Diode (Fairchild Semiconductor) D1 SB540 1 Schottky Diode (Fairchild Semiconductor) ZD1 1N4745 1 Zener Diode (Fairchild Semiconductor) DL1 1N5233 1 Zener Diode (Fairchild Semiconductor) ZP1 82V (1W) 1 Zener Diode (Fairchild Semiconductor) ZDS1 P6KE180A 1 TVS (Fairc hild Semiconductor)
Dimensions are in millimeters unless otherwise noted. Figure 25. 8-Lead Dual In-Line Package (DIP)
0.378 MAX
FSQ0170RNA, FSQ0270RNA, FSQ0370RNA — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 17