FSL306LR ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Built−in Avalanche Rugged SENSEFET: 650 V
  • Fixed Operating Frequency: 50 kHz
  • No−Load Power Consumption: <25 mW at 230 VAC with External Bias; <120 mW at 230 VAC without External Bias
  • No Need for Auxiliary Bias Winding
  • Frequency Modulation for Attenuating EMI
  • Pulse−by−Pulse Current Limiting
  • Ultra−Low Operating Current: 250 /C0109A
  • Built−in Soft−Start and Startup Circuit
  • Adjustable Peak Current Limit
  • Built−in Transconductance (Error) Amplifier
  • Various Protections: Overload Protection (OLP), Over−V oltage Protection (OVP), Feedback Open Loop Protection (FB_OLP), AOCP (Abnormal Over−Current Protection), Thermal Shutdown (TSD)
  • Fixed 650 ms Restart Time for Safe Auto−Restart Mode of All Protections
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

Applications

  • SMPS for Home Appliances and Industrial Applications
  • SMPS for Auxiliary Power MARKING DIAGRAM See detailed ordering and shipping information on page 13 of this data sheet.

ORDERING INFORMATION

PDIP−7 (PDIP−8 LESS PIN 6) CASE 626A PDIP7 MINUS PIN 6 GW CASE 707AA LR306LR = Specific Device Code FSR306LR Y = Logo &Z = Assembly Plant Code &2 = 2−Digit Date Code &3 = 3−Digit Date Code &K = 2−Digits Lot Run Traceability Code FSL306LR &Z&3 $Y&Z&2&K L336LR FSL306LRN FSL306LRLX

Figure 1. Buck Converter Application Figure 2. Non−Isolation Flyback Converter

10 V HVREGInternal

Figure 3. Internal Block Diagram

Figure 4. Pin Configuration 1 GND Ground. SENSEFET source terminal on the primary side and internal control ground. high−voltage regulator to reduces power consumption. determine the peak current limit. divided by external resistor divider. and GND pins to achieve stability and good dynamic performance. internal high−voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. reaches 10 V. After that, the internal high−voltage regulator turns on and off regularly to maintain VCC at 10 V.

www.onsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Min Max Unit VDS Drain Pin Voltage −0.3 650.0 V VCC Supply Voltage −0.3 26.0 V VCOMP VCOMP Pin Voltage −0.3 Internally Clamped Voltage (Note 1) V VFB Feedback Voltage −0.3 12.0 V ILIMIT Current Limit Pin Voltage −0.3 12.0 V IDM Drain Current Pulsed (Note 2) − 2.8 A EAS Single Pulsed Avalanche Energy (Note 3) − 10.5 mJ PD Total Power Dissipation − 1.25 W TJ Operating Junction Temperature (Note 4) −40 125 °C Maximum Junction Temperature − 150 °C TSTG Storage Temperature −55 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V COMP is clamped by internal clamping diode (11 V, ICLAMP_MAX < 100 /C0109A). 2. Repetitive rating: pulse width is limited by maximum junction temperature. 3. L = 10 mH, starting T J = 25°C. 4. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics. THERMAL IMPEDANCE (TA = 25°C unless otherwise specified) Symbol Characteristic Value Unit /C0113JA Junction−to−Ambient Thermal Impedance (Note 5) 100 °C/W 5. JEDEC recommended environment, JESD51−2, and test board, JESD51−3, with minimum land pattern. ESD CAPABILITY Symbol Characteristic Value Unit ESD Human Body Model, JESD22−A114 (Note 6) 4 kV Charged Device Model, JESD22−C101 (Note 6) 2 6. Meets JEDEC standards JESD22−A114 and JESD 22−C101. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Conditions Min Typ Max Unit SENSEFET SECTION BVDSS Drain Source Breakdown Voltage VCC = 0 V, ID = 250 /C0109A 650 − − V IDSS Zero Gate Voltage Drain Current VDS = 520 V, TA = 125°C − − 250 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, ID = 0.3 A − 12 18 /C0087 CISS Input Capacitances VGS = 0 V, VDS = 25 V, f = 1 MHz − 97 − pF COSS Output Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 13.6 − pF CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 2.4 − pF tr Rise Time VDD = 325 V, ID = 0.7 A − 7.6 − ns tf Fall Time VDD = 325 V, ID = 0.7 A − 26.1 − ns

www.onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (continued) Symbol UnitMaxTypMinConditionsParameter CONTROL SECTION fOSC Switching Frequency VCOMP = 2.5 V 45 50 55 kHz fM Frequency Modulation (Note 7) VCOMP = 2.5 V, Randomly − ±3 − kHz VSTART UVLO Threshold Voltage VCOMP = 0 V, VCC Sweep 7.2 8.0 8.8 V VSTOP After Turn On 6.3 7.0 7.7 V IPK Current Limit Source Current VCOMP = 2.5 V 35 50 65 /C0109A tSS Soft−Start Time VCOMP = 2.5 V 7 10 13 ms BURST MODE SECTION VBURH Burst−mode HIGH Threshold Voltage VCC = 15 V, VCOMP Increase 0.58 0.65 0.72 V VBURL Burst−mode LOW Threshold Voltage VCC = 15 V, VCOMP Decrease 0.52 0.59 0.66 V HYSBUR Burst−mode Hysteresis − 60 − mV PROTECTION SECTION ILIM Peak Current Limit VCOMP = 2.5 V, di/dt = 300 mA//C0109s 0.40 0.45 0.50 A tCLD Current Limit Delay (Note 7) − − 200 ns VOLP Overload Protection VCOMP Increase 2.7 3.0 3.3 V VAOCP Abnormal Over−Current Protection (Note 7) VCOMP = 2.5 V 0.8 1.0 1.2 V tLEB Leading−Edge Blanking Time (Note 7) − 200 − ns VFB_OLP FB Open Loop Protection VFB Decrease 0.4 0.5 0.6 V VOVP Over−Voltage Protection VCC Increase 23.0 24.5 26.0 V TSD Thermal Shutdown Temperature (Note 7) 125 135 150 °C HYSTSD TSD Hysteresis Temperature (Note 7) − 60 − °C tDELAY Over Load Protection Delay (Note 7) VCOMP > 3 V − 40 − ms tRESTART Restart Time After Protection (Note 7) − 650 − ms TRANSCONDUCTANCE AMPLIFIER SECTION Gm Transconductance of Error Amplifier 190 240 290 /C0109mho VREF Voltage Feedback Reference 2.45 2.50 2.55 V IEA.SR Output Sourcing Current VFB = VREF − 0.05 V − −12 − /C0109A IEA.SK Output Sink Current VFB = VREF + 0.05 V − 12 − /C0109A HIGH−VOLTAGE REGULATOR SECTION VHVREG HV Regulator Voltage VCOMP = 0 V, VDRAIN = 40 V 9 10 11 V TOTAL DEVICE SECTION IOP1 Operating Supply Current (Control Part Only, without Switching) 0 V < VCOMP < VBURL − 0.25 0.35 mA IOP2 Operating Supply Current (While Switching) VBURL < VCOMP < VOLP − 0.8 1.3 mA ICH Startup Charging Current VCC = 0 V, VDRAIN > 40 V − 6 − mA ISTART Startup Current VCC = Before VSTART, VCOMP = 0 V − 120 155 /C0109A VDRAIN Minimum Drain Supply Voltage VCC = VCOMP = 0 V, VDRAIN Increase − 35 − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Though guaranteed by design, they are not 100% tested in production.

10 V and provides operating current (I OP) for all internal

external bias is higher than 10 V . Figure 17. Startup and HVREG Block

10 V HVREG

FSL306LR have random frequency fluctuation functions. world−wide EMI requirements. Figure 18. Frequency Fluctuation Waveform COMP pin to control output voltage. Figure 19. Pulse Width Modulation (PWM) Circuit duty cycle by comparing with the voltage across the RSENSE. C1, RC1, and CC2, respectively. Figure 20. Characteristics of gm Amplifier

2.6 VVFB VREF

inverting input of PWM comparator, as shown in Figure 19. current of the SENSEFET is limited. incorrect feedback operation in the current−mode control.

10 V through the internal high−voltage regulator until

control continues until restart time (650 ms) is counted. SENSEFET until the fault condition is eliminated. protection circuit should be activated to protect the SMPS. circuit can be enabled during the load transition or startup. terminated, as shown in Figure 22. Figure 21. Overload Protection Internal Circuit Figure 22. Overload Protection (OLP) Waveform mis−triggering due to the leading−edge spike.

  • Small current rating inductors (L1 & L2), an SMD−type resistor (R1), and an additional AC rectifying diode (D2) are placed for good EMI performance.
  • External bias circuitry, a SMD−type resistor (R2), and a small−signal diode (D5) reduce power loss of the internal high−voltage regulator.

Figure 31. Schematic Table 1. BILL OF MATERIALS

www.onsemi.com Method† Typical Output Power (Note 8) Current Limit RDS(ON),MAX

85 VAC~265 VAC & Open Frame (Note 9)

(Note 10) Flyback Application FSL306LRN −40°C~125°C 7−DIP Rail 0.45 A 184 /C0087 3 W 7 W FSL306LRLX 7−LSOP Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 8. The junction temperature can limit the maximum output power. 9. Maximum practical continuous power in an open−frame design at 50 °C ambient. 10.Based on 15 V output voltage condition. Output voltage can limit the maximum output power. SENSEFET is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries.

PDIP−7 (PDIP−8 LESS PIN 6) CASE 626A ISSUE C DATE 22 APR 2015 SCALE 1:1 NOTE 8 D b L A eB XXXXXXXXX AWL YYWWG E GENERIC MARKING DIAGRAM* XXXX = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb −Free Package A TOP VIEW C SEATING PLANE

0.010 CASIDE VIEW

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY . 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). M c B H NOTE 5 e e/2 A2 NOTE 3 M B M NOTE 6 M DIM MIN MAX INCHES A −−−− 0.210 A1 0.015 −−−− b 0.014 0.022 C 0.008 0.014 D 0.355 0.400 D1 0.005 −−−− e 0.100 BSC E 0.300 0.325 M −−−− 10 −−− 5.33 0.38 −−− 0.35 0.56 0.20 0.36 9.02 10.16 0.13 −−−

2.54 BSC

7.62 8.26 −−− 10 MIN MAX MILLIMETERS E1 0.240 0.280 6.10 7.11 0.060 TYP 1.52 TYP A2 0.115 0.195 2.92 4.95 L 0.115 0.150 2.92 3.81 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 98AON11774DDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP−7 (PDIP−8 LESS PIN 6) onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. 98AON13755GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP7 MINUS PIN 6 GW © Semiconductor Components Industries, LLC, 2017 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales