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Technical content
Features
Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit Overload Protection (OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis, Output-Short Protection (OSP), and Under-Voltage Lockout (UVLO) with Hysteresis , Line Over Voltage Protection (LOVP) Low Operating Current (0.4mA) in Burst Mode Internal Startup Circuit Internal High-Voltage SenseFET: 650V Built-in Soft-Start: 15ms Auto-Restart Mode
Applications
Power Supply for Home Appliances, LCD Monitors, STBs, and DVD Players
Description
The FSL156MRIN is an integrated Pulse Width Modulation (PWM) controller and SenseFET specifically designed for offline Switched Mode Power Supplies (SMPS) with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Line-Over Voltage Protection (LOVP), Under- Voltage Lockout (UVLO), Leading-Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature- compensated precise current sources for loop compensation, and self-protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the FSL156MRIN reduces total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform suited for cost-effective design of a flyback converter.
Ordering Information
Part Number Package(1) Operating Junction Temperature Current Limit (Typ.) RDS(ON) (Max.) Output Power Table(2) 230VAC ±15% 85-265V AC Adapter(3) Open Frame(4) Adapter(3) Open Frame(4) FSL156MRIN 8-DIP -40°C ~ +125°C 1.6A 2.2 26W 40W 20W 30W Notes: 1. Lead-free package per JEDEC J-STD-020B. 2. The junction temperature can limit the maximum output power. 3. Typical continuous power in a non-v entilated enclosed adapter measured at 50C ambient temperature. 4. Maximum practical continuous power in an open-frame design at 50 C ambient temperature.
Figure 1. Typic © 2012 Semiconductor Components Industries, LLC.
Figure 3. Pin A 1 GND Ground. This pin is the control ground and the SenseFET source.
2 V CC
current for both startup and steady-state operation. Feedback. This pin is internally connected to the inverting input of the PWM comparator. overload protection triggers, which shuts down the FPS.
4 V IN
this pin should be directly connected to the GND.
5 V STR
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link. © 2012 Semiconductor Components Industries, LLC.
www.onsemi.com FSL156MRIN — Green-Mode Power Switch (FPS™) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may dam age the device. The device may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VSTR VSTR Pin Voltage 650 V VDS Drain Pin Voltage 650 V VCC VCC Pin Voltage 26 V VFB Feedback Pin Voltage -0.3 10.0 V VIN V IN Pin Voltage -0.3 10.0 V IDM Drain Current Pulsed 4 A IDS Continuous Switching Drain Current(5) TC=25C 1.90 A TC=100C 1.27 EAS Single-Pulsed Avalanche Energy (6) 190 mJ PD Total Power Dissipation (TC=25C)(7) 1.5 W TJ Maximum Junction Temperature 150 C Operating Junction Temperature(8) -40 +125 C TSTG Storage Temperature -55 +150 C ESD Electrostatic Discharge Capability Human Body Model, JESD22-A114 4.5 kV Charged Device Model, JESD22-C101 2.0 Notes: 5. Repetitive peak switching current when the i nductive load is assumed: limited by maximum duty (DMAX=0.73) and junction temperature (see Figure 4). 6. L=45mH, starting T J=25C. 7. Infinite cooling condition (refer to the SEMI G30-88). 8. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics. Figure 4. Repetitive Peak Switching Current Thermal Impedance TA=25°C unless otherwise specified. Symbol Parameter Value Unit θJA Junction-to-Ambient Thermal Impedance (9) 85 °C/W ΨJL Junction-to-Lead Thermal Impedance (10) 11 °C/W Notes: 9. JEDEC recommended environment, JESD51-2, and test board, JESD51-10, with minimum land pattern. 10. Measured on drain pin #7, close to the plastic interface. © 2012 Semiconductor Components Industries, LLC. FSL156MRIN • Rev. 2
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Electrical Characteristics
TJ = 25C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit SenseFET Section BVDSS Drain-Source Breakdown Voltage VCC=0V, ID=250A 650 V IDSS Zero-Gate-Voltage Drain Current VDS=520V, TA=125C 250 µA RDS(ON) Drain-Source On-State Resistance V GS=10V, ID=1A 1.8 2.2 Ω CISS Input Capacitance (11) VDS=25V, VGS=0V, f=1MHz 515 pF COSS Output Capacitance (11) VDS=25V, VGS=0V, f=1MHz 75 pF tr Rise Time VDS=325V, ID=4A, RG=25Ω 26 ns tf Fall Time VDS=325V, ID=4A, RG=25Ω 25 ns td(on) Turn-On Delay VDS=325V, ID=4A, RG=25Ω 14 ns td(off) Turn-Off Delay VDS=325V, ID=4A, RG=25Ω 32 ns Control Section fS Switching Frequency(11) VCC=14V, VFB=4V 61 67 73 kHz fS Switching Frequency Variation(11) -25C < TJ < 125C ±5 ±10 % DMAX Maximum Duty Ratio VCC=14V, VFB=4V 61 67 73 % DMIN Minimum Duty Ratio VCC=14V, VFB=0V 0 % IFB Feedback Source Current VFB=0 65 90 115 µA VSTART UVLO Threshold Voltage VFB=0V, VCC Sweep 11 12 13 V VSTOP After Turn-on, VFB =0V 7.0 7.5 8.0 V tSS Internal Soft-Start Time VSTR=40V, VCC Sweep 15 ms VRECOMM Recommended V CC Range 13 23 V Burst Mode Section VBURH Burst-Mode Voltage VCC=14V, VFB Sweep 0.45 0.50 0.55 V VBURL 0.30 0.35 0.40 V Hys 150 mV Protection Section ILIM Peak Drain Current Limit di/dt=300mA/s 1.45 1.60 1.75 A VSD Shutdown Feedback Voltage V CC=14V, VFB Sweep 6.45 7.00 7.55 V IDELAY Shutdown Delay Current VCC=14V, VFB=4V 1.2 2.0 2.8 µA tLEB Leading-Edge Blanking Time(11,12) 300 ns VOVP Over-Voltage Protection V CC Sweep 23.0 24.5 26.0 V VINH Line Over-Voltage Protection Threshold Voltage VCC=14V, VIN Sweep 1.87 1.95 2.03 V VINHYS Line Over-Voltage Protection Hysteresis V CC=14V, VIN Sweep 0.06 V tOSP Output-Short Protection (11) Threshold Time OSP Triggered when t ON<tOSP & VFB>VOSP (Lasts Longer than tOSP_FB) 0.7 1.0 1.3 µs VOSP Threshold VFB 1.8 2.0 2.2 V tOSP_FB VFB Blanking Time 2.0 2.5 3.0 µs TSD Thermal Shutdown Temperature(11) Shutdown Temperature 125 135 145 C THYS Hysteresis 60 C Continued on the following page… FSL156MRIN — Green-Mode Power Switch (FPS™) © 2012 Semiconductor Components Industries, LLC. FSL156MRIN • Rev. 2
www.onsemi.com Electrical Characteristics (Continued) TJ = 25C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit Total Device Section IOP Operating Supply Current, (Control Part in Burst Mode) VCC=14V, VFB=0V 0.3 0.4 0.5 mA IOPS Operating Switching Current, (Control Part and SenseFET Part) V CC=14V, VFB=2V 1.1 1.5 1.9 mA ISTART Start Current VCC=11V (Before VCC Reaches VSTART) 85 120 155 µA ICH Startup Charging Current VCC=VFB=0V, VSTR=40V 0.7 1.0 1.3 mA VSTR Minimum VSTR Supply Voltage V CC=VFB=0V, VSTR Sweep 26 V Notes: 11. These parameters are guaranteed; not 100% tested in production. 12. t LEB includes gate turn-on time. FSL156MRIN — Green-Mode Power Switch (FPS™) © 2012 Semiconductor Components Industries, LLC. FSL156MRIN • Rev. 2
Characteristic graphs are normalized at TA=25°C. Figure 17. Line OVP (V INH) vs. TA Figure 18. Hysteresis of LOVP (V INHYS) vs. TA © 2012 Semiconductor Components Industries, LLC.
- Startup: At startup, an internal high-voltage current
- Soft-Start: The internal soft-start circuit increases
secondary diode during startup.
- Feedback Control : This device employs Current-
input voltage is increased or the output load is decreased.
3.1 Pulse-by-Pulse Current Limit : Because Current-
through the SenseFET is limited.
3.2 Leading-Edge Blanking (LEB) : At the instant the
(300ns) after the SenseFET is turned on. Figure 20. Puls © 2012 Semiconductor Components Industries, LLC.
- Protection Circuits: The FSL156MRIN has several
the SenseFET remains off. This causes V CC to fall. SenseFET until the fault c ondition is eliminated. improved without increasing cost. Figure 21. A
4.1 Overload Protection (OLP) : Overload is defined
protection circuit should trigger to protect the SMPS. implemented as auto-restart.
4.2 Abnormal Over-Curre nt Protection (A OCP):
Figure 23. A © 2012 Semiconductor Components Industries, LLC.
stress on the drain of the SenseFET when turned off. short is shown in Figure 24. Figure 24. Outp
4.4 Over-Voltage Protection (OVP): If the
be designed to be below 24.5V.
4.5 Thermal Shutdown (TSD) : The SenseFET and
thermal shutdown is triggered and stops operation. when normal operation resumes.
4.6 Line Over-Voltage Protection (LOVP) : If the line
Figure 25. Line
- Soft Burst Mode : To minimize power dissipation in
switching loss in Standby Mode. Figure 26. Burs © 2012 Semiconductor Components Industries, LLC.
- Random Frequency Fluctuation (RFF) : Fluctuating
switching frequency variation, which is limited internally. included to meet the EMI requirements (e.g. EN55022). Figure 27. Ra © 2012 Semiconductor Components Industries, LLC.
Figure 28. 8-Lead, MDIP, JEDEC MS-001, .300" Wide
5.08 MAX
0.33 MIN
B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILENAME AND REVSION: MKT-N08FREV2. © 2012 Semiconductor Components Industries, LLC.
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