FSL116LR ONSEMI | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Features
- Internal Avalanche−Rugged SENSEFET (650 V)
- Under 50 mW Standby Power Consumption at 265 V AC, No−load Condition with Burst Mode
- Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI
- Internal Startup Circuit
- Built−in Soft−Start: 20 ms
- Pulse−by−Pulse Current Limit
- Various Protection: Over V oltage Protection (OVP), Overload Protection (OLP), Output−Short Protection (OSP), Abnormal Over−Current Protection (AOCP), Internal Thermal Shutdown Function with Hysteresis (TSD)
- Auto−Restart Mode
- Under−V oltage Lockout (UVLO)
- Low Operating Current: 1.8 mA
- Adjustable Peak Current Limit
Table 1. MAXIMUM OUTPUT POWER (Note 1)
11 W 16 W 10 W 14 W
- The junction temperature can limit the maximum output power.
- 230V AC or 100/115VAC with doubler.
- Typical continuous power in a non −ventilated enclosed adapter
ORDERING INFORMATION
Applications
- SMPS for VCR, STB, DVD & DVCD Players
- SMPS for Home Appliance
- Adapter Related Resources
- https://www.onsemi.com/pub/Collateral/ AN−4137.pdf.pdf
- https://www.onsemi.com/pub/Collateral/ AN−4141.pdf.pdf
- https://www.onsemi.com/PowerSolutions/ home.do
Figure 3. Pin Configuration 1 GND Ground. SENSEFET source terminal on the primary side and internal control ground.
2 VCC
the internal startup switch opens and device power is supplied via the auxiliary transformer winding.
3 VFB
sient conditions, but still allows the protection mechanism to operate under true overload conditions.
4 IPK
5 VSTR
650 V. Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance.
www.onsemi.com /C0081JA Junction−to−Ambient Thermal Resistance (Note 7, 8) 80 °C/W /C0081JC Junction−to−Case Thermal Resistance (Note 7, 9) 19 /C0081JT Junction−to−Top Thermal Resistance (Note 7, 10) 33.7 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. Repetitive rating: pulse width limited by maximum junction temperature. 5. L = 30 mH, starting T J = 25°C. 6. Meets JEDEC standards JESD 22 −A114 and JESD 22−C101 7. All items are tested with the standards JESD 51 −2 and JESD 51−10. 8. /C0081JA free−standing, with no heat−sink, under natural convection. 9. /C0081JC junction−to−lead thermal characteristics under /C0081JA test condition. TC is measured on the source #7 pin closed to plastic interface for /C0081JA thermo−couple mounted on soldering. 10./C0081JT junction−to−top of thermal characteristic under /C0081JA test condition. Tt is measured on top of package. Thermo−couple is mounted in epoxy glue. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION BVDSS Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 /C0109A 650 − − V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 250 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, VGS = 0 V, TC = 25°C − 7.3 10.0 /C0087 CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 135 − pF COSS Output Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 21 − pF CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 3.2 − pF td(on) Turn−on Delay VDD = 350 V, ID = 1 A − 10 − ns tr Rise Time VDD = 350 V, ID = 1 A − 13.4 − ns td(off) Turn−off Delay VDD = 350 V, ID = 1 A − 14.9 − ns tf Fall Time VDD = 350 V, ID = 1 A − 36.8 − ns CONTROL SECTION fOSC Switching Frequency VDS = 650 V, VGS = 0 V 45.5 50.0 54.5 kHz /C0068fOSC Switching Frequency Variation VGS = 10 V, VGS = 0 V, TC = 125°C ±5 ±10 % fFM Frequency Modulation ±3 kHz DMAX Maximum Duty Cycle VFB = 4 V 71 77 83 % DMIN Minimum Duty Ratio VFB = 0 V 0 0 0 % VSTART UVLO Threshold Voltage 11 12 13 V VSTOP After Turn−on 7.0 8.0 9.0 V IFB Feedback Source Current VFB = 0 320 400 480 /C0109A tS/S Internal Soft−Start Time VFB = 4 V 15 20 25 ms BURST−MODE SECTION VBURH Burst−Mode Voltage TJ = 25°C 0.48 0.60 0.72 V VBURL 0.32 0.45 0.58 V VBURH(HYS) − 150 − mV PROTECTION SECTION ILIM Peak Current Limit TJ = 25°C, di/dt = 300 mA//C0109s 1.06 1.20 1.34 A
www.onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) PROTECTION SECTION tCLD Current Limit Delay Time (Note 11) 200 ns VSD Shutdown Feedback Voltage VCC = 15 V 5.5 6.0 6.5 V IDELAY Shutdown Delay Current VFB = 5 V 3.5 5.0 6.5 /C0109A VOVP Over−Voltage Protection Threshold VFB = 2 V 22.5 24.0 25.5 V tOSP Output Short Protection (Note 11) Threshold Time OSP Triggered when ton < tOSP VFB > VOSP and (Lasts Longer than tOSP_FB) 1.00 1.35 /C0109s VOSP Threshold Feedback Voltage 1.44 1.60 V tOSP_FB Feedback Blanking Time 2.0 2.5 /C0109s VAOCP AOCP Voltage (Note 11) TJ = 25°C 0.85 1.00 1.15 V TSD Thermal Shutdown (Note 11) Shutdown Temperature 125 137 150 °C HYSTSD Hysteresis 60 °C tLEB Leading−Edge Blanking Time (Note 11) 300 ns TOTAL DEVICE SECTION IOP1 Operating Supply Current (Note 11) (While Switching) VCC = 14 V, VFB > VBURH 2.5 3.5 mA IOP2 Operating Switching Current, (Control Part Only) VCC = 14 V, VFB < VBURL 1.8 2.5 mA ICH Startup Charging Current VCC = 0 V 0.9 1.1 1.5 mA VSTR Minimum VSTR Supply Voltage VCC = VFB = 0 V, VSTR Increase 35 V 11. Though guaranteed by design, it is not 100% tested in production.
Where X is the resistance of the parallel network. Figure 23. Peak Current Limit Adjustment
PDIP8 9.42x6.38, 2.54P CASE 646CM ISSUE O DATE 31 JUL 2016
5.08 MAX
0.33 MIN
(0.56) 3.683 3.200 3.60 3.00 2.54 1.65 1.27 7.62 0.560 0.355 9.83 9.00 6.670 6.096 9.957 7.870 0.356 0.200 8.255 7.610 7.62 SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS−001, VARIATION BA B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D. DIMENSIONS AND TOLERANCES PER ASME Y14.5M−2009 FRONT VIEW TOP VIEW MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13468GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP8 9.42X6.38, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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