FSL116HR ONSEMI | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Features
- Internal Avalanche−Rugged SENSEFET (650 V)
- Under 50 mW Standby Power Consumption at 265 VAC, No−load Condition with Burst Mode
- Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI
- Internal Startup Circuit
- Built−in Soft−Start: 20 ms
- Pulse−by−Pulse Current Limiting
- Various Protections: Over−V oltage Protection (OVP), Overload Protection (OLP), Output−Short Protection (OSP), Abnormal Over−Current Protection (AOCP), Internal Thermal Shutdown Function with Hysteresis (TSD)
- Auto−Restart Mode
- Under−V oltage Lockout (UVLO)
- Low Operating Current: 1.8 mA
- Adjustable Peak Current Limit
- This is a Pb−Free Device
Applications
- SMPS for VCR, STB, DVD, & DVCD Players
- SMPS for Home Appliance
- Adapter www.onsemi.com PDIP8 9.42x6.38, 2.54P CASE 646CM MARKING DIAGRAM $Y = ON Semiconductor Logo &E = Designates Space &Z = Assembly Plant Code &2 = 2 −Digit Date Code Format &K = 2 −Digit Lot Run Tracebility Code FSL116HR = Specific Device Code Data See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION
www.onsemi.com Related Resources
- AN−4137 − Design Guidelines for Offline Flyback Converters Using Power Switch
- AN−4141 − Troubleshooting and Design Tips for Power Switch Flyback Applications
- AN−4147 − Design Guidelines for RCD Snubber of Flyback
- Power Supply WebDesigner − Flyback Design & Simulation − In Minutes at No Expense
Table 1. MAXIMUM OUTPUT POWER
11 W 16 W 10 W 14 W
- The junction temperature can limit the maximum output power.
- 230 V AC or 100 / 115 VAC with doubler.
- Typical continuous power in a non −ventilated enclosed adapter
Part Number Operating Temperature Range Top Mark Package Shipping FSL116HR −40 to 105°C FSL116HR 8−Lead, Dual Inline Package (DIP) (Pb−Free)
3000 Units / Tube
Figure 1. Typical Application
Figure 2. Internal Block Diagram
8 V / 12 V
Figure 3. Pin Configuration
www.onsemi.com PIN DEFINITIONS Pin No. Name Description ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ GND ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Ground. SENSEFET source terminal on the primary side and internal control ground. ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ VCC ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Positive Supply Voltage Input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (VSTR) via an internal switch during startup (see Figure 2). Once VCC reaches the UVLO upper threshold (12 V), the internal startup switch opens and device power is supplied via the auxiliary transformer winding. ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ VFB ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Feedback Voltage. The non−inverting input to the PWM comparator, it has a 0.4 mA current source connected internally, while a capacitor and opto−coupler are typically connected externally. There is a delay while charging external capacitor CFB from 2.4 V to 6 V using an internal 5 /C0109A current source. This delay prevents false triggering under transient conditions, but still allows the protection mechanism to operate under true overload conditions. ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ IPK ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Peak Current Limit. Adjusts the peak current limit of the SENSEFET. The feedback 0.4 mA current source is diverted to the parallel combination of an internal 6 k/C0087 resistor and any external resistor to GND on this pin to determine the peak current limit. ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ VSTR ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Startup. Connected to the rectified AC line voltage source. At startup, the internal switch supplies internal bias and charges an external storage capacitor placed between the VCC pin and ground. Once VCC reaches 12 V, the internal switch is opened. ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ 6, 7, 8 ÁÁÁ ÁÁÁ ÁÁÁ Drain ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Drain. Designed to connect directly to the primary lead of the transformer and capable of switching a maximum of 650 V. Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Unit VSTR VSTR Pin Voltage −0.3 650.0 V VDS Drain Pin Voltage −0.3 650.0 V VCC Supply Voltage − 26 V VFB Feedback Voltage Range −0.3 12 V ID Continuous Drain Current − 1 A IDM Drain Current Pulsed (Note 4) − 4 A EAS Single Pulsed Avalanche Energy (Note 5) − 38 mJ PD Total Power Dissipation − 1.5 W TJ Operating Junction Temperature Internally Limited °C TA Operating Ambient Temperature −40 +105 °C TSTG Storage Temperature −55 +150 °C ESD Human Body Model, JESD22−A114 (Note 6) 5 − KV Charged Device Model, JESD22−C101 (Note 6) 2 − /C0081JA Junction−to−Ambient Thermal Resistance (Note 7, 8) − 80 °C/W /C0081JC Junction−to−Case Thermal Resistance (Note 7, 9) − 19 °C/W /C0081JT Junction−to−Top Thermal Resistance (Note 7, 10) − 33.7 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. Repetitive rating: pulse width limited by maximum junction temperature. 5. L = 30 mH, starting T J = 25°C. 6. Meets JEDEC standards JESD 22 −A114 and JESD 22−C101. 7. All items are tested with the standards JESD 51 −2 and JESD 51−10. 8. /C0081JA free−standing, with no heat−sink, under natural convection. 9. /C0081JC junction−to−lead thermal characteristics under QJA test condition. TC is measured on the source #7 pin closed to plastic interface for /C0081JA thermo−couple mounted on soldering. 10./C0081JT junction−to−top of thermal characteristic under QJA test condition. Tt is measured on top of package. Thermo−couple is mounted in epoxy glue.
www.onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION BVDSS Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 /C0109A 650 − − V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 250 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, VGS = 0 V, TC = 25°C − 7.3 10.0 /C0087 CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 135 − pF COSS Output Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 21 − pF CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 3.2 − pF td(ON) Turn−On Delay VDS = 350 V, IDS = 1 A − 10 − ns tr Rise Time VDS = 350 V, IDS = 1 A − 13.4 − ns td(OFF) Turn−Off Delay VDS = 350 V, IDS = 1 A − 14.9 − ns tf Fall Time VDS = 350 V, IDS = 1 A − 36.8 − ns CONTROL SECTION fOSC Switching Frequency VDS = 650 V, VGS = 0 V 90 100 110 KHz /C0068fOSC Switching Frequency Variation VGS = 10 V, VGS = 0 V, TC = 125°C − ±5 ±10 % fFM Frequency Modulation − ±3 − KHz DMAX Maximum Duty Cycle VFB = 4 V 71 77 83 % DMIN Minimum Duty Cycle VFB = 0 V 0 0 0 % VSTART UVLO Threshold Voltage 11 12 13 V VSTOP After Turn−On 7 8 9 V IFB Feedback Source Current VFB = 0 V 320 400 480 /C0109A tS/S Internal Soft−Start Time VFB = 4 V 15 20 25 ms BURST−MODE SECTION VBURH Burst−Mode Voltage VCC = 14 V, VFB Sweep 0.56 0.70 0.84 V VBURL 0.37 0.50 0.63 V VBUR(HYS) − 200 − mV PROTECTION SECTION ILIM Peak Current Limit TJ = 25°C, di/dt = 300 mA//C0109s 0.96 1.10 1.24 A tCLD Current Limit Delay Time (Note 11) 200 − − ns VSD Shutdown Feedback Voltage VCC = 15 V 5.5 6.0 6.5 V IDELAY Shutdown Delay Current VFB = 5 V 3.5 5.0 6.5 /C0109A VOVP Over−Voltage Protection Threshold VFB = 2 V 22.5 24.0 25.5 V tOSP Output Short Protection (Note 11) Threshold Time TJ = 25°C OSP Triggered when ton < tOSP, VFB > VOSP and Lasts Longer than tOSP_FB − 1.00 1.35 /C0109s VOSP Threshold Feedback Voltage 1.44 1.60 − V tOSP_FB Feedback Blanking Time 2.0 2.5 − /C0109s VAOCP AOCP Voltage (Note 11) TJ = 25°C 0.85 1.00 1.15 V TSD Thermal Shutdown (Note 11) Shutdown Temperature 125 137 150 °C HYSTSD Hysteresis − 60 − °C
Figure 17. Auto−Restart Protection Waveforms transient situation or a true overload situation. Figure 18. The shutdown delay is the time required to charge CFB from 2.4 V to 6 V with 5 /C0109A current source. Figure 18. Overload Protection (OLP) Figure 19. Abnormal Over−Current Protection
24 V, OVP circuit is activated, resulting in termination of the
di/dt can flow through the SENSEFET during the LEB time. again. An abnormal condition output is shown in Figure 20. Figure 20. Output Short Waveforms (OSP) saturation and reduces the stress on the secondary diode. Figure 21. Internal Soft−Start
0.25 ILIM
16 Steps
SENSEFET and reduces switching loss in Standby Mode. Figure 22. Burst−Mode Operation where X is the resistance of the parallel network.
Figure 23. Peak Current Limit Adjustment SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
PDIP8 9.42x6.38, 2.54P CASE 646CM ISSUE O DATE 31 JUL 2016
5.08 MAX
0.33 MIN
(0.56) 3.683 3.200 3.60 3.00 2.54 1.65 1.27 7.62 0.560 0.355 9.83 9.00 6.670 6.096 9.957 7.870 0.356 0.200 8.255 7.610 7.62 SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS−001, VARIATION BA B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D. DIMENSIONS AND TOLERANCES PER ASME Y14.5M−2009 FRONT VIEW TOP VIEW MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13468GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP8 9.42X6.38, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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