FSJ055D INTERSIL | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • 70A, 60V, rDS(ON) = 0.012Ω
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm 2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BV DSS - Typically Survives 2E12 if Current Limited to I DM
  • Photo Current - 6.0nA Per-RAD(Si)/s Typically
  • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm 2 Symbol Packaging TO-254AA

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSJ055D1 10K TXV FSJ055D3 100K Commercial FSJ055R1 100K TXV FSJ055R3 100K Space FSJ055R4 D G S CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. SG D Data Sheet October 1999 File Number 4250.5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSJ055D, FSJ055R UNITS Continuous Drain Current Maximum Power Dissipation (Distance >0.063 in. (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 1mA, VGS = 0V 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS, ID = 1mA TC = -55oC - - 5.0 V TC = 25oC 1.5 - 4.0 V TC = 125oC 0.5 - - V Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V TC = 25oC- - 2 5 µA TC = 125oC - - 250 µA Gate to Source Leakage Current I GSS VGS = ±20V T C = 25oC - - 100 nA TC = 125oC - - 200 nA Drain to Source On-State Voltage V DS(ON) VGS = 12V, ID = 70A - - 0.88 V Drain to Source On Resistance r DS(ON)12 ID = 54A, VGS = 12V TC = 25oC - 0.008 0.012 Ω TC = 125oC - - 0.022 Ω Turn-On Delay Time t D(ON) VDD = 30V, ID = 70A, RL = 0.43Ω, VGS 12V, RGS = 2.35Ω - - 40 ns Rise Time t r - - 200 ns Turn-Off Delay Time t d(OFF) - - 70 ns Fall Time t f - - 40 ns Total Gate Charge Q g(TOT) VGS = 0V to 20V V DD = 30V, ID = 70A - - 280 nC Gate Charge at 12V Q g(12) VGS = 0V to 12V - 150 170 nC Threshold Gate Charge Q g(TH) VGS = 0V to 2V - - 12 nC Gate Charge Source Q gs -3 5 4 3 n C Gate Charge Drain Q gd -5 9 8 1 n C Plateau Voltage V (PLATEAU) ID = 70A, VDS = 15V - 7 - V Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz - 4850 - pF Output Capacitance C OSS - 2200 - pF Reverse Transfer Capacitance C RSS - 425 - pF Thermal Resistance Junction to Case R θJC - - 0.83 oC/W Thermal Resistance Junction to Ambient R θJA -- 4 0 oC/W FSJ055D, FSJ055R

Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD ISD = 70A 0.6 - 1.8 V Reverse Recovery Time t rr ISD = 70A, dISD/dt = 100A/µs - - 250 ns Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BV DSS VGS = 0, ID = 1mA 60 - V Gate to Source Threshold Volts (Note 3) V GS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V Gate to Body Leakage (Notes 2, 3) I GSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) I DSS VGS = 0, VDS = 48V - 25 µA Drain to Source On-State Volts (Notes 1, 3) V DS(ON) VGS = 12V, ID = 70A - 0.88 V Drain to Source On Resistance (Notes 1, 3) r DS(ON)12 VGS = 12V, ID = 54A - 0.012 Ω NOTES: 1. Pulse test, 300 µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS. Single Event Effects (SEB, SEGR) (Note 4) TEST SYMBOL ENVIRONMENT (NOTE 5) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 60 Br 37 36 -10 60 Br 37 36 -15 48 Br 37 36 -20 36 I6 0 3 1 0 6 0 I6 0 3 1 - 5 4 8 I 60 31 -10 36 I 60 31 -15 24 I 60 31 -20 12 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm 2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). FSJ055D, FSJ055R

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current I GSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current I DSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance r DS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage V GS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress V GS = 30V, t = 250µsV GS = 30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25 oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA V DS = 48V, t = 10ms 11 A Unclamped Inductive Switching I AS VGS(PEAK) = 15V, L = 0.1mH 200 A Thermal Response ∆VSD tH = 100ms; VH = 25V; IH = 4A 120 mV Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 4A 200 mV FSJ055D, FSJ055R

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSJ055D, FSJ055R

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 FSJ055D, FSJ055R TO-254AA

3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE

WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. D L Q e A E ØP Ø b 0.065 R MAX. TYP. 12 3 SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.249 0.260 6.33 6.60 - A1 0.040 0.050 1.02 1.27 - Øb 0.035 0.045 0.89 1.14 2, 3 D 0.790 0.800 20.07 20.32 - E 0.535 0.545 13.59 13.84 - e 0.150 TYP 3.81 TYP 4 e1 0.300 BSC 7.62 BSC 4 H1 0.245 0.265 6.23 6.73 - J1 0.140 0.160 3.56 4.06 4 L 0.520 0.560 13.21 14.22 - ØP 0.139 0.149 3.54 3.78 - Q 0.110 0.130 2.80 3.30 - NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.