FSGM0565R ONSEMI | Alldatasheet
Document overview
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- PDF pages: 18
Technical content
Features
- Soft Burst−Mode Operation for Low Standby Power Consumption and Low Noise
- Precision Fixed Operating Frequency: 66 kHz
- Pulse−by−Pulse Current Limit
- Various Protection Functions: Overload Protection (OLP), Over−V oltage Protection (OVP), Abnormal Over−Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis, Output−Short Protection (OSP), and Under−V oltage Lockout (UVLO) with Hysteresis
- Auto−Restart Mode
- Internal Startup Circuit
- Internal High−V oltage SENSEFET: 650 V
- Built−in Soft−Start: 15 ms
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Power Supply for LCD TV and Monitor, STB and DVD Combination www.onsemi.com TO−220−6LD LF CASE 340BG MARKING DIAGRAM $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3 −Digit Date Code Format &K = 2 −Digit Lot Run Tracebility Code GM0765R = Specific Device Code Data See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION
$Y&Z&3&K GM0765R TO−220 FULLPAK 6LD LF CASE 340BP TO−220−6LD LF CASE 340BN $Y&Z&3&K GM0765R
www.onsemi.com RDS(ON) (Max.) Output Power Table (Note 2) Replaces Device Shipping 230VAC /C0043 15% (Note 3) 85 − 265 VAC Adapter (Note 4) Open Frame (Note 5) Adapter (Note 4) Open Frame (Note 5) FSGM0565RWDTU TO−220F 6−Lead (Note 1) W−Forming −40°C ~ +125°C 2.20 A 2.2 /C0087 70 W 80 W 41 W 60 W FSDM0565RE 400 / Tube FSGM0565RUDTU TO−220F 6−Lead (Note 1) U−Forming −40°C ~ +125°C 2.20 A 2.2 /C0087 70 W 80 W 41 W 60 W FSDM0565RE 400 / Tube FSGM0565RLDTU TO−220F 6−Lead (Note 1) L−Forming −40°C ~ +125°C 2.20 A 2.2 /C0087 70 W 80 W 41 W 60 W FSDM0565RE 400 / Tube 1. Pb −free package per JEDEC J−STD−020B. 2. The junction temperature can limit the maximum output power. 3. 230 V AC or 100 / 115 VAC with voltage doubler. 4. Typical continuous power in a non −ventilated enclosed adapter measured at 50°C ambient temperature. 5. Maximum practical continuous power in an open −frame design at 50°C ambient temperature. Application Circuit Figure 1. Typical Application Circuit
SENSEFET Drain. High−voltage power SENSEFET drain connection. Ground. This pin is the control ground and the SENSEFET source. GND. If the voltage of this pin reaches 6 V, the overload protection triggers, which shuts down the power switch. high−voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. Once VCC reaches 12 V, the internal current source (ICH) is disabled. should not be assumed, damage may occur and reliability may be affected.
- Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (D
- Infinite cooling condition (refer to the SEMI G30−88).
- Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
10.The voltage between the package back side and the lead is guaranteed. Figure 4. Repetitive Peak Switching Current
www.onsemi.com THERMAL IMPEDANCE TA = 25°C unless otherwise specified. Symbol Characteristic Value Unit /C0113JA Junction−to−Ambient Thermal Impedance (Note 11) 62.5 °C/W /C0113JC Junction−to−Case Thermal Impedance (Note 12) 3 °C/W 11. Infinite cooling condition (refer to the SEMI G30−88). 12.Free standing with no heat−sink under natural convection. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION BVDSS Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 /C0109A 650 − − V IDSS Zero−Gate−Voltage Drain Current VDS = 520 V, TA = 125°C − − 250 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, ID = 1 A − 1.8 2.2 /C0087 CISS Input Capacitance (Note 13) VDS = 25 V, VGS = 0 V, f = 1MHz − 515 − pF COSS Output Capacitance (Note 13) VDS = 25 V, VGS = 0 V, f = 1MHz − 75 − pF tr Rise Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 26 − ns tf Fall Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 25 − ns td(on) Turn−on Delay Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 14 − ns td(off) Turn−off Delay Time VDS = 325 V, ID = 4 A, RG = 25 /C0087 − 32 − ns CONTROL SECTION fS Switching Frequency VCC = 14 V, VFB = 4 V 60 66 72 kHz /C0068fS Switching Frequency Variation (Note 13) −25°C < TJ < +125°C − ±5 ±10 % DMAX Maximum Duty Ratio VCC = 14 V, VFB = 4 V 65 70 75 % DMIN Minimum Duty Ratio VCC = 14 V, VFB = 0 V − − 0 % IFB Feedback Source Current VFB = 0 160 210 260 /C0109A VSTART UVLO Threshold Voltage VFB = 0 V, VCC Sweep 11 12 13 V VSTOP After Turn−on, VFB = 0 V 7.0 7.5 8.0 V VOP VCC Operating Range 13 − 23 V tS/S Internal Soft−Start Time VSTR = 40 V, VCC Sweep − 15 − ms BURST−MODE SECTION VBURH Burst−Mode Voltage VCC = 14 V, VFB Sweep 0.6 0.7 0.8 V VBURL 0.4 0.5 0.6 V Hys − 200 − mV PROTECTION SECTION ILIM Peak Drain Current Limit di/dt = 300 mA//C0109s 2.0 2.2 2.4 A VSD Shutdown Feedback Voltage VCC = 14 V, VFB Sweep 5.5 6.0 6.5 V IDELAY Shutdown Delay Current VCC = 14 V, VFB = 4 V 2.5 3.3 4.1 /C0109A Hys Leading−Edge Blanking Time (Note 13, 14) − 300 − ns VOVP Over−Voltage Protection VCC Sweep 23.0 24.5 26.0 V
www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol UnitMaxTypMinTest ConditionParameter PROTECTION SECTION tOSP Output Short Protection (Note 13) Threshold Time OSP Triggered when tON < tOSP & VFB > VOSP (Lasts Longer than tOSP_FB) 1.0 1.2 1.4 /C0109s VOSP Threshold VFB 1.8 2.0 2.2 V tOSP_FB VFB Blanking Time 2.0 2.5 3.0 /C0109s TSD Thermal Shutdown Temperature (Note 13) Shutdown Temperature 130 140 150 °C Hys Hysteresis − 30 − °C TOTAL DEVICE SECTION IOP Operating Supply Current, (Control Part in Burst Mode) VCC = 14 V, VFB = 0 V 1.2 1.6 2.0 mA IOPS Operating Switching Current, (Control Part and SENSEFET Part) VCC = 14 V, VFB = 4 V 2.0 2.5 3.0 mA ISTART Start Current VCC = 11 V (Before VCC Reaches VSTART) 0.5 0.6 0.7 mA ICH Startup Charging Current VCC = VFB = 0 V, VSTR = 40 V 1.00 1.15 1.50 mA VSTR Minimum VSTR Supply Voltage VCC = VFB = 0 V, VSTR Sweep − 26 − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 13.Although these parameters are guaranteed, they are not 100% tested in production. 14.t LEB includes gate turn−on time. COMPARISON OF FSDM0565RE AND FSGM0565R Function FSDM0565RE FSGM0565R Advantages of FSGM0565R Burst Mode Advanced Burst Advanced Soft Burst Low noise and low standby power Lightning Surge Strong Enhanced SENSEFET and controller against lightning surge Soft−Start 10 ms (Built−in) 15 ms (Built−in) Longer soft−start time Protections OLP OVP TSD OLP OVP OSP AOCP TSD with Hysteresis Enhanced protections and high reliability Power Balance Long TCLD Very Short TCLD The difference of input power between the low and high input voltage is quite small
(CVcc) connected to the VCC pin, as illustrated in Figure 17. unless VCC goes below the stop voltage of 7.5 V .
7.5 V / 12 V
Figure 17. Startup Block together with the SENSEFET current, slowly after it starts. Figure 18. An opto−coupler (such as the FOD817) and shunt voltage increases or the output load is decreases. FB*), as shown in Figure 18. voltage of the cathode of D2 is clamped at this voltage. (300 ns) after the SENSEFET is turned on. Figure 18. Pulse Width Modulation Circuit
www.onsemi.com WINDING SPECIFICATION Pin (S /C0034 F) Wire Turns Winding Method Barrier Tape TOP BOT Ts Np/2 3 → 2 0.35 φ x 1 22 Solenoid Winding 2.0 mm 1 Insulation: Polyester Tape t = 0.025 mm, 2 Layers N5V 8 → 9 0.4 φ x 3 (TIW) 3 Solenoid Winding Insulation: Polyester Tape t = 0.025 mm, 2 Layers N14V 10 → 8 0.4 φ x 3 (TIW) 5 Solenoid Winding Insulation: Polyester Tape t = 0.025 mm, 2 Layers N5V 7 → 6 0.4 φ x 3 (TIW) 3 Solenoid Winding Insulation: Polyester Tape t = 0.025 mm, 2 Layers Na 4 → 5 0.15 φ x 1 7 Solenoid Winding 4.0 mm 4.0 mm 1 Insulation: Polyester Tape t = 0.025 mm, 2 Layers Np/2 2 → 1 0.35 φ x 1 21 Solenoid Winding 2.0 mm 1 Insulation: Polyester Tape t = 0.025 mm, 2 Layers
ELECTRICAL CHARACTERISTICS
Inductance 1 − 3 700 /C0109H ±7% 67 kHz, 1 V Leakage 1 − 3 15 /C0109H Maximum Short All Other Pins Core & Bobbin
- Core: EER3019 (Ae = 134.0 mm2) • Bobbin: EER3019
www.onsemi.com BILL OF MATERIALS Part # Value Note Part # Value Note Fuse Capacitor F101 250 V 3.15 A C101 220 nF / 275 V Box (Pilkor) NTC C102 150 nF / 275 V Box (Pilkor) NTC101 5D−11 DSC C103 100 /C0109F / 400 V Electrolytic (SamYoung) Resistor C104 3.3 nF / 630 V Film (Sehwa) R101 1.5 M/C0087, J 1 W C105 33 nF / 100 V Film (Sehwa) R102 75 k/C0087, J 1/2 W C106 220 nF SMD (2012) R103 51 k/C0087, J 1 W C107 47 /C0109F / 50 V Electrolytic (SamYoung) R104 51 /C0087, J 1/2 W C201 1000 /C0109F / 25 V Electrolytic (SamYoung) R201 620 /C0087, J 1/4 W, 1% C202 1000 /C0109F / 25 V Electrolytic (SamYoung) R202 1.2 k/C0087, F 1/4 W, 1% C203 2200 /C0109F / 10 V Electrolytic (SamYoung) R203 18 k/C0087, F 1/4 W, 1% C204 1000 /C0109F / 16 V Electrolytic (SamYoung) R204 8 k/C0087, F 1/4 W, 1% C205 68 nF / 100 V Electrolytic (SamYoung) R205 8 k/C0087, F 1/4 W, 1% C206 100 nF Electrolytic (SamYoung) IC C207 100 nF Film (Sehwa) FSGM0565R FSGM0565R ON Semiconductor C301 4.7 nF / Y2 Y−cap (Samhwa) IC201 KA431LZ ON Semiconductor Inductor IC301 FOD817B ON Semiconductor LF101 20 mH Line filter 0.7Ø Diode L201 5 /C0109H 5A Rating D101 RGP15M Vishay L202 5 /C0109H 5A Rating D102 UF4004 Vishay Jumper ZD101 1N4749 Vishay J101 D201 MBR20150CT ON Semiconductor Transformer D202 FYPF2006DN ON Semiconductor T101 700 /C0109H BD101 G3SBA60 Vishay SENSEFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
TO−220−6LD LF CASE 340BG ISSUE O DATE 31 AUG 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13840GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−220−6LD LF © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
TO−220−6LD LF CASE 340BN ISSUE O DATE 31 AUG 2016 NOTES: A) NO PACKAGE STANDARD APPLIES. B) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C) DIMENSIONS ARE IN MILLIMETERS. 16.08 15.68 ∅3.28 3.08 2.19 1.27 3.81 1.75 0.85 0.75 5PLCS 5° 5° (0.70) 0.61 0.463.18 #2,4,6 #1,3,5 2.74 2.34 #1 #6 R1.00 0.65 0.55 6PLCS 3.40 3.20 10.36 9.96 4.90 4.70 6PLCS 6.88 6.48 B (1.13) 1.30 1.05 A
0.20 A B
C 4.80 4.40 (17.83) (21.01) 0.05 C R1.00 5.18 4.98 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13847GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−220−6LD LF © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
TO−220 FULLPAK 6LD LF CASE 340BP ISSUE O DATE 31 AUG 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13848GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1TO−220 FULLPAK 6LD LF © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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