FSQ0365_0709 FAIRCHILD | Alldatasheet
Document overview
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- PDF pages: 24
Technical content
Features
Optimized for Valley Switching (VSC) Low EMI through Variable Frequency Control and Inherent Frequency Modulation High-Efficiency through Minimum Voltage Switching Narrow Frequency Variation Range over Wide Load and Input Voltage Variation Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection (OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) Under-Voltage Lockout (UVLO) with Hysteresis Internal Start-up Circuit Internal High-Voltage SenseFET (650V) Built-in Soft-Start (15ms)
Applications
Power Supply for DVP Player and DVD Recorder, Set-Top Box Adapter Auxiliary Power Supply for PC, LCD TV, and PDP TV Related Application Notes AN-4137, AN-4141, AN-4147, AN-4150 (Flyback) AN-4134 (Forward)
Description
A Valley Switching Converter generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ-series is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for valley switching operation with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout, Leading Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated pr ecise current sources for loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solutions, the FSQ-series reduces total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for cost- effective designs of valley switching fly-back converters.
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 2
Ordering Information
Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation. 3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature. 4. Maximum practical continuous power in an open-frame design at 50°C ambient. 5. Pb-free package per JEDEC J-STD-020B. Product Number(5) PKG. Operating Temp. Cur- rent Limit RDS(ON) Max. Maximum Output Power(1) Replaces Devices230VAC±15%(2) 85-265VAC Adapter(3) Open-Frame(4) Adapter(3) Open-Frame(4) FSQ311 8-DIP -40 to +85C 0.6A 19 Ω 7W 10W 6W 8W FSDL321 FSDM311FSQ311L 8-LSOP FSQ321 8-DIP -40 to +85°C 0.6A 19 Ω 8W 12W 7W 10W FSDL321 FSDM311FSQ321L 8-LSOP FSQ0165RN 8-DIP -40 to +85°C 0.9A 10 Ω 10W 15W 9W 13W FSDL0165RN FSQ0165RL 8-LSOP FSQ0265RN 8-DIP -40 to +85°C 1.2A 6 Ω 14W 20W 11W 16W FSDM0265RN FSDM0265RNB FSQ0265RL 8-LSOP FSQ0365RN 8-DIP -40 to +85°C 1.5A 4.5 Ω 17.5W 25W 13W 19W FSDM0365RN FSDM0365RNBFSQ0365RL 8-LSOP
Figure 3. Pin Configuration (Top View) 1 GND SenseFET source terminal on primary side and internal control ground. switch opens and device power is supplied via the auxiliary transformer winding. tions but still allows the protection mechanism to operate under true overload conditions.
4 Sync
ground. Once the Vcc reaches 12V, the internal switch is opened. pins to the transformer will decrease leakage inductance.
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified. Notes: 6. Repetitive rating: Pulse width limited by maximum junction temperature. 7. L=51mH, starting TJ=25°C. 8. Meets JEDEC standards JESD22-A114 and JESD22-A115. Thermal Impedance Notes: 9. All items are tested with the standards JESD 51-2 and 51-10 (DIP). 10. Free-standing, with no heat-sink, under natural convection. 11. Infinite cooling condition - refer to the SEMI G30-88. 12. Measured on the package top surface. Symbol Characteristic Min. Max. Unit VSTR Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 9.0 V VSync Sync Pin Voltage Range -0.3 9.0 V IDM Drain Current Pulsed(6) FSQ0365 12 A FSQ0265 8 FSQ0165 4 FSQ321/311 1.5 EAS Single Pulsed Avalanche Energy(7) FSQ0365 230 mJ FSQ0265 140 FSQ0165 50 FSQ321/311 10 PD Total Power Dissipation 1.5 W TJ Recommended Operating Junction Temperature -40 Internally limited °C TA Operating Ambient Temperature -40 85 °C TSTG Storage Temperature -55 150 °C ESD Human Body Model(8) CLASS1 C Machine Model(8) CLASS B Symbol Parameter Value Unit 8-DIP(9) θJA (10) Junction-to-Ambient Thermal Resistance 80 °C/WθJC (11) Junction-to-Case Thermal Resistance 20 θJT (12) Junction-to-Top Thermal Resistance 35
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 6
Electrical Characteristics
TA = 25°C unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. Unit SenseFET Section BVDSS Drain Source Breakdown Voltage V CC = 0V, ID = 100µA 650 V IDSS Zero-Gate-Voltage Drain Current V DS = 560V 100 µA RDS(ON) Drain-Source On-State Resistance(13) FSQ0365 TJ = 25°C, ID = 0.5A 3.5 4.5 ΩFSQ0265 5.0 6.0 FSQ0165 8.0 10.0 FSQ321/311 14.0 19.0 CSS Input Capacitance FSQ0365 VGS = 0V, VDS = 25V, f = 1MHz 315 pFFSQ0265 550 FSQ0165 250 FSQ321/311 162 COSS Output Capacitance FSQ0365 VGS = 0V, VDS = 25V, f = 1MHz pFFSQ0265 38 FSQ0165 25 FSQ321/311 18 CRSS Reverse Transfer Capacitance FSQ0365 VGS = 0V, VDS = 25V, f = 1MHz 9.0 pFFSQ0265 17.0 FSQ0165 10.0 FSQ321/311 3.8 td(on) Turn-On Delay Time FSQ0365 VDD = 350V, ID = 25mA 11.2 nsFSQ0265 20.0 FSQ0165 12.0 FSQ321/311 9.5 tr Rise Time FSQ0365 VDD = 350V, ID = 25mA nsFSQ0265 15 FSQ0165 4 FSQ321/311 19 td(off) Turn-Off Delay Time FSQ0365 VDD = 350V, ID = 25mA 28.2 nsFSQ0265 55.0 FSQ0165 30.0 FSQ321/311 33.0 tf Fall Time FSQ0365 VDD = 350V, ID = 25mA nsFSQ0265 25 FSQ0165 10 FSQ321/311 42 Control Section tON.MAX1 Maximum On Time1 All but Q321 T J = 25°C 10.5 12.0 13.5 µs tON.MAX2 Maximum On Time2 Q321 T J = 25°C 6.35 7.06 7.77 µs tB1 Blanking Time1 All but Q321 13.2 15.0 16.8 µs tB2 Blanking Time2 Q321 7.5 8.2 µs
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 7 Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Notes: 13. Pulse test: Pulse-Width=300μs, duty=2% 14. Though guaranteed, it is not 100% tested in production. 15. Propagation delay in the control IC. 16. Includes gate turn-on time. Symbol Parameter Condition Min. Typ. Max. Unit tW Detection Time Window T J = 25°C, Vsync = 0V 3.0 µs fS1 Initial Switching Freq.1 All but Q321 50.5 55.6 61.7 kHz fS2 Initial Switching Freq.2 Q321 84.0 89.3 95.2 kHz ΔfS Switching Frequency Variation(14) -25°C < TJ < 85°C ±5 ±10 % IFB Feedback Source Current V FB = 0V 700 900 1100 µA DMIN Minimum Duty Cycle V FB = 0V 0 % VSTART UVLO Threshold Voltage After turn-on 11 12 13 V VSTOP 789V tS/S1 Internal Soft-Start Time1 All but Q321 With free-running frequency 15 ms tS/S2 Internal Soft-Start Time2 Q321 With free-running frequency 10 ms Burst Mode Section VBURH Burst-Mode Voltage T J = 25°C, tPD = 200ns(15) 0.45 0.55 0.65 V VBURL 0.25 0.35 0.45 V VBUR(HYS) 200 mV Protection Section ILIM Peak Current Limit FSQ0365 T J = 25°C, di/dt = 240mA/µs 1.32 1.50 1.68 A FSQ0265 T J = 25°C, di/dt = 200mA/µs 1.06 1.20 1.34 FSQ0165 T J = 25°C, di/dt = 175mA/µs 0.8 0.9 1.0 FSQ321 T J = 25°C, di/dt = 125mA/µs 0.53 0.60 0.67 FSQ311 T J = 25°C, di/dt = 112mA/µs 0.53 0.60 0.67 VSD Shutdown Feedback Voltage V CC = 15V 5.5 6.0 6.5 V IDELAY Shutdown Delay Current V FB = 5V 4 5 6 µA tLEB Leading-Edge Blanking Time(14) 200 ns VOVP Over-Voltage Protection V CC = 15V, VFB = 2V 5.5 6.0 6.5 V tOVP Over-Voltage Protection Blanking Time 2 3 4 µs TSD Thermal Shutdown Temperature(14) 125 140 155 °C Sync Section VSH Sync Threshold Voltage 0.55 0.70 0.85 V VSL 0.14 0.20 0.26 V tSync Sync Delay Time(14)(16) 300 ns Total Device Section IOP Oper. Supply Current (Control Part Only) V CC = 15V 1 3 5 mA ISTART Start Current VCC = VSTART - 0.1V (before VCC reaches VSTART) 270 360 450 µA ICH Start-up Charging Current V CC = 0V, VSTR = min. 40V 0.65 0.85 1.00 mA VSTR Minimum VSTR Supply Voltage 26 V
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 8 Comparison Between FSDM0x65RNB and FSQ-Series Function FSDM0x65RNB FSQ-Series FSQ-Series Advantages Operation method Constant frequency PWM Valley switching operation Improved efficiency by valley switching Reduced EMI noise EMI reduction Frequency modulation Valley switching & inherent frequency modulation Reduce EMI noise by two ways Burst-mode operation Fixed burst peak Advanced burst-mode Improved standby power by valley switch- ing also in burst-mode Because the current peak during burst operation is dependent on VFB, it is easier to solve audible noise Protection AOCP Improved reliability through precise abnor- mal over-current protection
- Startup: At startup, an internal high-voltage current
Figure 20. Start-up Circuit
- Feedback Control: FPS employs current mode
are typically used to impl ement the feedback network. voltage is increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current
current through the SenseFET is limited.
2.2 Leading Edge Blanking (LEB): At the instant the
LEB) after the SenseFET is turned on. Figure 21. Pulse-Width-Modulation (PWM) Circuit
- Synchronization: The FSQ-series employs a valley
winding voltage, as shown in Figure 22. Figure 22. Valley Resonant Switching Waveforms
3 OSC
- Protection Circuits: The FSQ-series has several
switching is terminated and the SenseFET remains off. reliability is improved without increasing cost. Figure 23. Auto Restart Protection Waveforms
4.1 Overload Protection (OLP): Overload is defined as
protection circuit should trigger to protect the SMPS. 20 ~ 50ms delay time is typical for most applications. Figure 24. Overload Protection
4.2 Abnormal Over-Current Protection (AOCP): When
Figure 25. Abnormal Over-Current Protection
4.3 Over-Voltage Protection (OVP): If the secondary
in the breakdown of the devices in the secondary side. voltage of the sync signal should be designed below 6V.
4.4 Thermal Shutdown (TSD): The SenseFET and the
exceeds ~150°C, the thermal shutdown triggers.
- Soft-Start: The FPS has an internal soft-start circuit
stress on the secondary diode during startup.
- Burst Operation: To minimize power dissipation in
thereby reducing switching loss in standby mode. Figure 26. Waveforms of Burst Operation
- Switching Frequency Limit: To minimize switching
as well as intermittent switching and audible noise. frequency-limit function, as shown in Figures 27 and 28.
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 16 Typical Application Circuit of FSQ0365RN High efficiency ( >77% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms) Key Design Notes The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pul- sating noises and to improved surge immunity. 1. Schematic Figure 29. Demo Circuit of FSQ0365RN
Figure 30. Transformer Schematic Diagram of FSQ0365RN
- Electrical Characteristics
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 18 6. Demo Board Part List Part Value Note Part Value Note Resistor Inductor R102 56k Ω 1W L201 10µH R103 5 Ω 1/2W L202 10µH R104 12k Ω 1/4W L203 4.9µH R105 100k Ω 1/4W L204 4.9µH R106 6.2k Ω 1/4W Diode R107 6.2k Ω 1/4W D101 IN4007 R108 62 Ω 1W D102 IN4004 R201 510 Ω 1/4W ZD101 1N4746A R202 1k Ω 1/4W D103 1N4148 R203 6.2k Ω 1/4W D201 UF4003 R204 20k Ω 1/4W D202 UF4003 R205 6k Ω 1/4W D203 SB360 Capacitor D204 SB360 C101 100nF/275V AC Box Capacitor C102 100nF/275V AC Box Capacitor IC C103 33µF/400V Electrolytic Capacitor IC101 FSQ0365RN FPS™ C104 10nF/630V Film Capacitor IC201 KA431 (TL431) Voltage reference C105 47nF/50V Mono Capacitor IC202 FOD817A Opto-coupler C106 100nF/50V SMD (1206) Fuse C107 22µF/50V Electrolytic Capacitor Fuse 2A/250V C110 33pF/50V Ceramic Capacitor NTC C201 470µF/35V Electrolytic Capacitor RT101 5D-9 C202 470µF/35V Electrolytic Capacitor Bridge Diode C203 470µF/35V Electrolytic Capacitor BD101 2KBP06M2N257 Bridge Diode C204 470µF/35V Electrolytic Capacitor Line Filter C205 1000µF/10V Electrolytic Capacitor LF101 40mH C206 1000µF/10V Electrolytic Capacitor Transformer C207 1000µF/10V Electrolytic Capacitor T101 C208 1000µF/10V Electrolytic Capacitor Varistor C209 100nF /50V Ceramic Capacitor TNR 10D471K
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 19 Typical Application Circuit of FSQ311 High efficiency ( >70% at universal input) Low standby mode power consumption (<1W at 230VAC input and 0.5W load) Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start (15ms) Key Design Notes The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms). The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input voltage can be adjusted. The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pul- sating noises and to improved surge immunity. 1. Schematic Figure 31. Demo Circuit of FSQ311
Figure 32. Transformer Schematic Diagram of FSQ311
- Electrical Characteristics
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 21 6. Demo Board Part List Part Value Note Part Value Note Resistor Inductor R2 100k Ω 1/4W L2 660µH ZR1 1.2k Ω 1/4W L1 4.7µH R4 5 Ω 1/2W L3 4.7µH R5 12k Ω 1/4W L5 4.7µH R7 6.2k Ω 1/4W L6 4.7µH R11 6.2k Ω 1/4W Diode RS5 150k Ω 2W D2,3,4,5 IN4007 RS6 200 Ω 1W D8 IN4004 R6 510 Ω 1/4W D10 1N4148 R8 1k Ω 1/4W ZD1 1N4746A R12 8k Ω 1/4W DS1 1N4007 R10 6.2k Ω 1/4W, 1% D1 UF4003 R13 6k Ω 1/4W, 1% D4 UF4003 Capacitor D7 SB360 C6 10µF/400V Electrolytic D9 SB360 C7 10µF/400V Electrolytic IC C17 47nF/50V Ceramic U1 FSQ311 FPS™ C104 100nF/50V SMD(1206) U2 KA431 (TL431) Voltage reference C14 22µF/50V Electrolytic U3 FOD817A Opto-coupler C18 33pF/50V Ceramic Fuse CS5 6.8nF/680V Film Fuse 2A/250V C2 100µF/35V Electrolytic NTC C3 100µF/35V Electrolytic RT1 5D-9 C4 100µF/35V Electrolytic Transformer C5 100µF/35V Electrolytic T1 EE1927 Bridge Diode C11 680µF/10V Electrolytic Ferrite bead C12 680µF/10V Electrolytic FB1 C15 680µF/10V Electrolytic C16 680µF/10V Electrolytic C19 68nµF/50V Ceramic C1 4.7nF/375V AC Ceramic
Figure 33. 8-Lead, Dual In-Line Package(DIP)
5.08 MAX
0.33 MIN
B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.
Figure 34. 8-Lead, LSOP Package
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™) © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5 24