FSDL0165RN FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Internal Avalanche Rugged Sense FET
  • Consumes only 0.65W at 240V AC & 0.3W load with Advanced Burst-Mode Operation
  • Frequency Modulation for low EMI
  • Precision Fixed Operating Frequency
  • Internal Start-up Circuit
  • Pulse by Pulse Current Limiting
  • Abnormal Over Current Protection
  • Over V oltage Protection
  • Over Load Protection
  • Internal Thermal Shutdown Function
  • Auto-Restart Mode
  • Under V oltage Lockout
  • Low Operating Current (3mA)
  • Adjustable Peak Current Limit
  • Built-in Soft Start

Applications

  • SMPS for VCR, SVR, STB, DVD & DVCD
  • SMPS for Printer, Facsimile & Scanner
  • Adaptor for Camcorder

Description

The FSDL0165RN is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high perfor- mance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The integrated PWM controller features include: a fixed oscillator with frequency modulation for reduced EMI, Under V oltage Lock Out (UVLO) protection, Leading Edge Blanking (LEB), optimized gate turn-on/turn- off driver, Thermal Shut Down (TSD) protection, Abnormal Over Current Protection (AOCP) and temperature compen- sated precision current sources for loop compensation and fault protection circuitry. When compared to a discrete MOSFET and controller or RCC switching converter solu- tion, the FSDL0165RN reduce total component count, design size, weight and at the same time increases efficiency, productivity, and system reliability. This device is a basic platform well suited for cost effective designs of flyback converters. Table 1. Notes: 1. Typical continuous power in a non-ven- tilated enclosed adapter measured at 50°C ambient. 2. Figure 1. Typical Flyback Application

Figure 2. Functional Block Diagram of FSDL0165RN

Figure 3. Pin Configuration (Top View) 1 GND Sense FET source terminal on primary side and internal control ground. vice power is supplied via the auxiliary transformer winding. The feedback voltage pin is the non-inverting input to the PWM comparator. mechanism to operate under true overload conditions. and any external resistor to GND on this pin to determine the current limit. If this pin is tied to Vcc or left floating, the typical current limit will be 1.2A. 12V, the internal switch is disabled.

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 4. Vsd is shutdown feedback voltage ( see Protection Section in Electrical Characteristics ) Thermal Impedance Note: 1. Free standing with no heatsink. 2. Measured on the GND pin close to plastic interface. Characteristic Symbol Value Unit Drain Current Pulsed(1) IDM 4.0 A DC Single Pulsed Avalanche Energy(2) EAS 95 mJ Maximum Supply Voltage V CC,MAX 20 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation P D 1.25 W Operating Junction Temperature. T J +150 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C Parameter Symbol Value Unit 8DIP Junction-to-Ambient Thermal θJA(1) 81.50 °C/W(3) Junction-to-Case Thermal θJC(2) 21.90 °C/W

Electrical Characteristics

(Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sense FET SECTION Startup Voltage (Vstr) Breakdown BV STR VCC=0V, ID=1mA 650 - - V Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=50µA 650 - - V Off-State Current (Max.Rating =660V) IDSS VDS=660V, VGS=0V - - 50 µA VDS=0.8Max.Rating VGS=0V, TC=125°C - - 200 µA On-State Resistance(1) RDS(ON) VGS=10V, ID=0.5A - 8.0 10.0 Ω Input Capacitance C ISS VGS=0V, VDS=25V, F=1MHz - 250 - pF Output Capacitance C OSS -2 5- pF Reverse Transfer Capacitance C RSS -1 0- pF Turn On Delay Time T D(ON) VDS=325V, ID=1.0A (Sense FET switching time is essentially independent of operating temperature) -1 2- ns Rise Time T R -4 - ns Turn Off Delay Time T D(OFF) -3 0- ns Fall Time T F -1 0- ns CONTROL SECTION Output Frequency F OSC FSDL0165R 45 50 55 KHz Output Frequency Modulation F MOD ±1.0 ±.1.5 ±2.0 KHz Frequency Change With Temperature(2) -- 2 5 °C ≤ Ta ≤ 85°C - ±5 ±10 % Maximum Duty Cycle D MAX FSDL0165R 71 77 83 % Minimum Duty Cycle D MIN 000 % Start threshold voltage V START V FB=GND 11 12 13 V Stop threshold voltage V STOP V FB=GND 7 8 9 V Feedback Source Current I FB V FB=GND 0.7 0.9 1.1 mA Internal Soft Start Time T S/S V FB=4V 10 15 20 ms BURST MODE SECTION Burst Mode Voltages VBURH - 0.5 0.6 0.7 V VBURL - 0.25 0.35 0.45 V PROTECTION SECTION Drain to Source Peak Current Limit I OVER Max. inductor current 1.06 1.20 1.35 A Current Limit Delay(3) TCLD - 500 - ns Thermal Shutdown T SD - 125 140 - °C

Note: 1. Pulse test: Pulse width ≤ 300uS, duty ≤ 2% 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 3. These parameters, although guaranteed, are not 100% tested in production Shutdown Feedback Voltage V SD 5.5 6.0 6.5 V Over Voltage Protection V OVP 18 19 - V Shutdown Feedback Delay Current I DELAY V FB=4V 3.5 5.0 6.5 µA Leading Edge Blanking Time T LEB 200 - - ns TOTAL DEVICE SECTION Operating Current I OP V CC=14V 1 3 5 mA Start Up Current I START V CC=0V 0.7 0.85 1.0 mA Vstr Supply Voltage V STR VCC=0V 35 - - V

Comparison Between KA5x0165RN and FSDL0165RN Function KA5x0265RN FSDL0165RN FSDL0165RN Advantages Soft-Start not applicable 15mS • Gradually increasing current limit during soft-start further reduces peak current and voltage component stresses • Eliminates external components used for soft-start in most applications • Reduces or eliminates output overshoot External Current Limit not applicable Programmable of default current limit • Smaller transformer • Allows power limiting (constant over- load power) • Allows use of larger device for lower losses and higher efficiency. Frequency Modulation not applicable ±1.5KHz @50KHz • Reduced conducted EMI Burst Mode Operation not applicable Yes-built into controller • Improve light load efficiency • Reduces no-load consumption • Transformer audible noise reduction Drain Creepage at Package 1,02mm 7.62mm • Greater immunity to arcing as a result of build-up of dust, debris and other contaminants

Typical Performance Characteristics (Control Part) (These characteristic graphs are normalized at Ta = 25°C) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Normalized Operating Frequency (Fosc) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized Frequency Modulation (FMOD) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Normalized Maximum duty cycle (Dmax) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized Operating supply current (Iop) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Nomalized Start Threshold Voltage (Vstart) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized Stop Threshold Voltage (Vstop)

Typical Performance Characteristics (Continued) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Normalized Feedback Source Current (Ifb) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized Peak current limit (Iover) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Normalized Start up Current (Istart) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized J-FET Start up current (Istr) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Te mp[℃] Normalized Burst peak current (Iburst) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -50 0 50 100 150 Temp[ ℃] Normalized Over Voltage Protection (Vovp)

  1. Startup : In previous generations of Fairchild Power

Figure 4. High voltage current source

  1. Feedback Control : The FSDL0165RN employs current
  2. Leading edge blanking (LEB) :

Figure 5. Pulse width modulation (PWM) circuit

  1. Protection Circuit : The FPSTM has several protective func-

4.1 Over Load Protection (OLP) :

time required to charge Cfb from 3V to 6V with 5uA.

3 OSC

Figure 6. Over load protection

4.2 Thermal Shutdown (TSD) : The Sense FET and the con-

4.3 Abnormal Over Current Protection (AOCP) :

Figure 7. AOCP Function & Block AOCP stops Sense FET within 350nS after it is activated.

4.4 Over Voltage Protection (OVP) : In case of malfunc-

be properly designed to be below 19V . of Sense FET current are allowed during the start-up phase. reduce the stress on the secondary diode.

Typical application circuit 1. Set Top Box Example Circuit (13W Output Power) FSDL0165RN DDD SV c c V f b 400V /47u UF4007 47K UF4004 33n 50V I_pk start 6.8n/ 1kV 30R 50V 47uF D15 SB360 D14 D13 EGP20D D12 PC817 FOD2741A C11 C12 +3.3V +5.0V +17.0V +23.0V 0.4~0.8A 0.2~0.5A 0.01~0.2A 0.005~0.20A C13 C15 C17 C16 C14 1000uF /16V 470uF /10V 1000uF /16V 470uF /10V 470uF /35V 220uF /35V 100uF /50V 100uF /50V R21 R14 R13 R15 330R 800R 6.9K R12 2.7K 1.5K C209 0.1uF/ monolithic LF1 40mH KBP06M 100pF /400V 100pF /400V 2A/250V FUSE 85VAC ~275VAC 56K/1/ R19 R20 PC817 TL431AZ EGP20D EGP20D 5 8 PERFORMANCE SUMMARY Output Power: 13W Regulation 3.3V: ±5% 5.0V: ±5% 17.0V: ±7% 23.0: ±7% Efficiency: ≥75% No load Consumption: 0.12W at 230Vac GreenFPS 6kR R15 20R R22 1KR Figure15. 13W multiple power supply using FSDL0165RN Multiple Output, 13W, 85-265V AC Input Power supply: Figure 15 shows a multiple output supply typical for high end set-top boxes containing high capacity hard disks for recording. The supply delivers an output power of 13W cont./15W peak (thermally limited) from an input voltage of 85 to 265 V AC. Efficiency at 9W, 85V AC is ≥75%. The 3.3 V and 5 V outputs are regulated to ±5% without the need for secondary linear regulators. DC stacking (the sec- ondary winding reference for the other output voltages is connected to the anode of D15. For more accuracy, connec- tion to the cathode of D15 will be better.) is used to minimize the voltage error for the higher voltage outputs. Due to the high ambient operating temperature requirement typical of a set-top box (60 °C) the FSDL0165RN is used to reduce con- duction losses without a heatsink. Resistor R5 sets the device current limit to limit overload power. Leakage inductance clamping is provided by R1 and C8, keeping the DRAIN voltage below 650 V under all condi- tions. Resistor R1 and capacitor C8 are selected such that R1 dissipates power to prevent rising of DRAIN V oltage caused by leakage inductance. The frequency modulation feature of FSDL0165RN allows the circuit shown to meet CISPR2AB with simple EMI filtering (C1, LF1 and C2) and the output grounded. The secondaries are rectified and smoothed by D12, D13, D14,and D15. Diode D15 for the 3.4V output is a Schottky diode to maximize efficiency. Diode D14 for the 5 V output is a PN type to center the 5 V output at 5 V . The 3.3 V and 5 V output voltage require two capacitors in parallel to meet the ripple current requirement. Switching noise filter- ing is provided by L3, L2 and L1. Resistor R15 prevents peak charging of the lightly loaded 23V output. The outputs are regulated by the reference (TL431) voltage in secondary. Both the 3.3 V and 5 V outputs are sensed via R13 and R14. Resistor R22 provides bias for TL431and R21 sets the over- all DC gain. Resistor R21, C209, R14 and R13 provide loop compensation.

  1. Transformer Specification 1. TRANSFORMER SPECIFICATION - SCHEMATIC DIAGRAM (TRANSFORMER) 2. WINDING SPECIFICATION NO. PIN(S →→→→ F) WIRE TURNS WINDING METHOD NP/2 3 → 2 0.25 Φ × 1 22 SOLENOID WINDING N3.3V 6 → 8 0.3 Φ × 8 2 STACK WINDING N5V 10 → 6 0.3 Φ × 2 1 STACK WINDING N16V 11 → 6 0.3 Φ × 4 7 SOLENOID WINDING N23V 12 → 11 0.3 Φ × 2 3 SOLENOID WINDING NP/2 2 → 1 0.25 Φ × 1 22 SOLENOID WINDING NB 4 → 5 0.25 Φ × 1 10 CENTER WINDING 3. ELECTRIC CHARACTERISTIC CLOSURE PIN SPEC. REMARKS INDUCTANCE 1 - 3 800uH ± 10% 1KHz, 1V LEAKAGE L 1 - 3 15uH MAX. 2nd ALL SHORT 4. BOBBIN & CORE. CORE: EER2828 BOBBIN: EER2828 NP/2 N3.3V NP/2 N B 3mm 6mm bottom top N5V N23V N17V 5 6

Figure 15. Layout Considerations for FSDL0165RN using 8DIP

Package Dimensions (Continued) 8LSOP

Ordering Information

Product Number Package Marking Code BV DSS FOSC RDS(on) FSDL0165RN 8DIP DL0165R 650V 50KHz 8.0 Ω FSDL0165RL 8LSOP DL0165R 650V 50KHz 8.0 Ω

6/17/04 0.0m 001  2004 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.