FSDH321 ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 16
Technical content
Features
- Internal Avalanche Rugged SENSEFET
- Consumes only 0.65 W at 240 V AC & 0.3 W Load with Advanced Burst−Mode Operation
- Frequency Modulation for EMI Reduction
- Precision Fixed Operating Frequency
- Internal Start−up Circuit
- Pulse−by−Pulse Current Limiting
- Abnormal Over Current Protection (AOCP)
- Over V oltage Protection (OVP)
- Over Load Protection (OLP)
- Internal Thermal Shutdown Function (TSD)
- Auto−Restart Mode
- Under V oltage Lockout (UVLO)
- Low Operating Current (max. 3 mA)
- Adjustable Peak Current Limit
- Built−in Soft Start
Applications
- SMPS for STB, Low Cost DVD Player
- Auxiliary Power for PC
- Adapter & Charger www.onsemi.com MARKING DIAGRAM See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(9.42x6.38, 2.54P) CASE 646CM ZXYKK Dx321 Z = Assembly Code XY = 2−digit Code (Year & Week) KK = 2−digit Die−Run Code Dx321 (x=H/L) = Specific Device Code PIN CONFIGURATION 8DIP (Top View) ON
FSDH321, FSDL321 www.onsemi.com Product Number Package Marking Code BVDSS fOSC RDS(ON) Shipping FSDH321 8DIP DH321 650 V 100 KHz 14 /C0087 3000 / Tube FSDL321 8DIP DL321 650 V 50 KHz 14 /C0087 3000 / Tube Table 1. OUTPUT POWER TABLE
- Typical continuous power in a non−ventilated enclosed adapter
with sufficient drain pattern as a heat sinker, at 50°C ambient.
- Maximum practical continuous power in an open frame design
with sufficient drain pattern as a heat sinker, at 50°C ambient.
- 230 VAC or 100/115 VAC with doubler.
Figure 1. Typical Flyback Application Figure 2. Functional Block Diagram of FSDx321
1 GND
8 V/12 V
Table 2. PIN DEFINITIONS 1 GND SENSEFET source terminal on primary side and internal control ground. device power is supplied via the auxiliary transformer winding. source connected internally while a capacitor and optocoupler are typically connected externally. current limit will be 0.7 A. plies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the Vcc reaches 12 V, the internal switch is opened. transformer will decrease leakage inductance. should not be assumed, damage may occur and reliability may be affected.
- Repetitive rating: Pulse width is limited by maximum junction temperature
NOTE: All items are tested with the standards JESD 51−2 and 51−10 (DIP).
- Free standing with no heatsink; without copper clad
- Measured on the DRAIN pin close to plastic interface
FSDH321, FSDL321 www.onsemi.com ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit SENSEFET SECTION IDSS Zero−Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 25 /C0109A VDS = 520 V, VGS = 0 V, TC = 125°C − − 200 /C0109A RDS(ON) Drain−Source On−State Resistance VGS = 10 V, ID = 0.5 A − 14 19 /C0087 gfs Forward Trans−Conductance (Note 8) VDS = 50 V, ID = 0.5 A 1.0 1.3 − S CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz − 162 − pF COSS Output Capacitance − 18 − CRSS Reverse Transfer Capacitance − 3.8 − td(on) Turn−On Delay Time VDS = 325 V, ID = 1.0 A − 9.5 − ns tr Rise Time − 19 − td(off) Turn−Off Delay Time − 33 − tf Fall Time − 42 − Qg Total Gate Charge VGS = 10 V, ID = 1.0 A, VDS = 325 V − 7.0 − nC Qgs Gate−Source Charge − 3.1 − Qgd Gate−Drain (Miller) Charge − 0.4 − CONTROL SECTION fOSC Switching Frequency FSDH321 90 100 110 KHz /C0068fMOD Switching Frequency Modulation ±2.5 ±3.0 ±3.5 fOSC Switching Frequency FSDL321 45 50 55 KHz /C0068fMOD Switching Frequency Modulation ±1.0 ±1.5 ±2.0 /C0068fOSC Switching Frequency Variation (Note 9) −25°C ≤ Ta ≤ 85°C − ±5 ±10 % DMAX Maximum Duty Cycle FSDH321 62 67 72 % FSDL321 71 77 83 VSTART UVLO Threshold Voltage VFB = GND 11 12 13 V VSTOP VFB = GND 7 8 9 IFB Feedback Source Current VFB = GND 0.7 0.9 1.1 mA tS/S Internal Soft Start Time VFB = 4 V 10 15 20 ms BURST MODE SECTION VBURH Burst Mode Voltage TJ = 25°C 0.4 0.5 0.6 V VBURL TJ = 25°C 0.25 0.35 0.45 V VBUR(HYST) Hysteresis − 150 − mV PROTECTION SECTION ILIM Peak Current Limit TJ = 25°C, /C0068i//C0068t = 250 mA//C0109s 0.6 0.7 0.8 A tCLD Current Limit Delay Time (Note 10) TJ = 25°C − 600 − ns TSD Thermal Shutdown Temperature (Note 10) 125 140 − °C VSD Shutdown Feedback Voltage 5.5 6.0 6.5 V VOVP Over Voltage Protection 18 19 20 V IDELAY Shutdown Delay Current VFB = 4 V 3.5 5.0 6.5 /C0109A tLEB Leading Edge Blanking Time 200 − − ns
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse test: Pulse width ≤ 300us, duty ≤ 2%
- These parameters, although guaranteed, are tested in EDS (wafer test) process
Table 3. COMPARISON BETWEEN FSDM311 AND FSDx321
FSDH321, FSDL321 www.onsemi.com Other Reference Materials AN−4134: Design Guidelines for Off−line Forward Converters Using ON Semiconductor Power Switch AN−4137: Design Guidelines for Off−line Flyback Converters Using ON Semiconductor Power Switch AN−4140: T ransformer Design Consideration for Off−line Flyback Converters using ON Semiconductor Power Switch AN−4141: T roubleshooting and Design Tips for ON Semiconductor Power Switch Flyback AN−4147: Design Guidelines for RCD Snubber of Flyback AN−4147: Audible Noise Reduction Techniques for FPS Table 4. TYPICAL APPLICATION CIRCUIT
- High efficiency (> 70% at full load, full input range)
- Low standby mode power consumption (< 1 W at DC 375 V input and 0.5 W load)
- Low component count
- Enhanced system reliability through various protection functions
- Low EMI through frequency modulation
- Internal soft−start (15 ms) Key Design Notes
- The delay time for over load protection is designed to be about 13 ms with C104 of 22 nF. If faster/slower triggering of OLP is required, C104 can be changed to a smaller/larger value (eg. 47 nF for about 30 ms).
- The pule−by−pulse peak current limit level(ILIM) is set to default value 0.7 A by floating the Ipk pin (#4).
- R102 and C101 clamp the DRAIN voltage of MOSFET below 650 V under all conditions. Schematic
Figure 26. 10 W PC Auxiliary Power Circuit
Figure 27. Transformer Schematic Diagram Table 5. WINDING SPECIFICATION Table 6. ELECTRICAL CHARACTERISTICS
Table 7. DEMO CIRCUIT PART LIST
FSDH321, FSDL321 www.onsemi.com PACKAGE DIMENSIONS PDIP8 9.42x6.38, 2.54P CASE 646CM ISSUE O
5.08 MAX
0.33 MIN
(0.56) 3.683 3.200 3.60 3.00 2.54 1.65 1.27 7.62 0.560 0.355 9.83 9.00 6.670 6.096 9.957 7.870 0.356 0.200 8.255 7.610 7.62 SIDE VIEW NOTES: A. CONFORMS TO JEDEC MS−001, VARIATION BA B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS D. DIMENSIONS AND TOLERANCES PER ASME Y14.5M−2009 FRONT VIEW TOP VIEW
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