FSD3328D FUTUREWAFER | Alldatasheet

Document overview

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Technical content

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw DFN1006-2L

Applications

  • Lan equipment
  • Video
  • DVI
  • High Speed Data Line
  • Ethernet
  • USB 2.0 Power and Data line Protection
  • Smart Phone Feature List
  • Max Operating Voltage VRWM:3.3V
  • ESD Protection:Level 4
  • Low Clamping Voltage
  • 35 Watts Peak Pulse Power per line(tp=8/20uS)
  • Ultra Low Capacitance:5pf typ.
  • Protection one line I/O port IEC Compatibility
  • ESD / Transient Protection According to: - IEC61000-4-2(ESD) : ±25KV(Contact) / ±25KV(Air) - IEC61000-4-4(EFT) : ±2.5KV / ±50A (5/50ns) - IEC61000-4-5(Surge) : ±5A (8/20us) Mechanical Characteristics
  • Molded JEDEC Package - DFN 1006
  • Packing: Tape and Reel
  • Flammability rating UL 94V-0
  • Halogen Free
  • JEDEC MSL Classification :Level 1 Maximum Ratings@ TA = 25°C Unless Otherwise Specified Parameter Symbol Test Condition Value Units Min. Max. Typ. Working Voltage V RWM -3.3 +3.3 V - Peak Pulse Power P PP 8/20 us, Current Waveform - 60 Watts - Peak Pulse Current I PP -5 +5 A - Electrostatic Discharge V ESD (Contact) R = 330Ω,C = 150pF -25 KV +25 - V ESD (Air) Operating Temperature T OP -55 +150 °C - Storage Temperature T STG -65 +150 - Absolute Maximum Ratings

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw

Electrical Characteristics

Parameter Symbol Test Condition Value Units Min. Typ. Max. Breakdown Voltage V BR It = 1mA , I/O to GND 3.5 - - V Clamping Voltage V CL IPP = 1A , I/O to GND - - 6.5 IPP = 5A , I/O to GND - - 9.5 Leakage Current I L V = 3.3V , I/O to GND - - 0.1 uA AC Characteristics Parameter Symbol Test Condition Value Units Min. Typ. Max. Line Capacitance C L V = 0V,f = 1MHZ, I/O to GND - 5.5 7.0 pF

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw td-Pulse Width(us) Fig. 1 Non-repetitive Peak Pulse Power V.S Pulse Time Peak Pulse Power (KW) Fig. 2 Power Derating Curve % of Rated Power Ambient Temp,TA(°C) Time (us) Percent of IPP Fig. 3 Pulse Waveform Capacitance CJ (Pf) Reverse Voltage-VR(V) Fig. 5Normalized Capacitance vs.Reverse Voltage Fig. 4 Clamping Voltage vs. Peak Pulse Current Clamping Voltage –VC (V) Peak Pulse Current-IPP (A) Typical Characteristics Diagrams

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw Pin 1 Pad Layout DFN1006-2L Symbol Min Max A 0.95 1.05 B 0.55 0.65 C 0.40 0.50 C1 - 0.05 D 0.45 0.55 e 0.65 BSC E 0.20 0.30 Dimensions DIM Inches Millimeters ( C ) .033 0.85 G .012 0.30 X .024 0.60 Y .022 0.55 Z .055 1.40 Unit:mm

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw Tape & Reel information

Latch Up ESD Protection Device Document Number:F11821L 25-May-2021 V2.0 www.futurewafer.com.tw History Version Date File No. Recording Basis A 18-May-2018 F11821L New Create Market 2.0 25-May-2021 F11821L Update Version System

Ordering Information

Part No. Marking Quantity Packing FSD3328D FX 10,000pcs 7” Reel Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 Tel ：+886-3-3350161/FAX ：+886-3-3350172 cherry@futurewafer.com.tw No. 286-14, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan