FSQ510_09 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
Uses an LDMOS Integrated Power Switch Optimized for Valley Switching Converter (VSC) Low EMI through Variable Frequency Control and Inherent Frequency Modulation High Efficiency through Minimum Drain Voltage Switching Extended Valley Switching for Wide Load Ranges Small Frequency Variation for Wide Load Ranges Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Protection Functions: Overload Protection (OLP), Internal Thermal Shutdown (TSD) with Hysteresis Under-Voltage Lockout (UVLO) with Hysteresis Internal Startup Circuit Internal High-Voltage SenseFET: 700V Built-in Soft-Start: 5ms
Applications
Auxiliary Power Supplies for LCD TV, LCD Monitor, Personal Computer, and White Goods
Description
A Valley Switching Converter (VSC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510 (H or M) is an integrated valley switching pulse width modulation (VS- PWM) controller and SenseFET specifically designed for offline switch-mode power supplies (SMPS) for valley switching with minimal external components. The VS-PWM controller includes an integrated oscillator, under-voltage lockout (UVLO), leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated prec ise current sources for loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solutions, the FSQ510 (H or M) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a platform for cost-effective designs of a valley switching flyback converters.
Ordering Information
Output Power Table (1) 230VAC ± 15%(2) 85-265VAC Part Number Package Eco Status Operating Junction Temperature Current Limit RDS(ON) (MAX) Adapter(3) Open Frame(4) Adapter(3) Open Frame(4) Replaces Devices FSQ510 7-DIP FSD210B FSQ510H 8-DIP FSD210DH FSQ510M 7-MLSOP RoHS -40 to +130°C 320mA 32Ω 5.5W 9W 4W 6W FSD210BM For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Notes: 1. The junction temperature can limit the maximum output power. 2. 230V AC or 100/115VAC with voltage doubler. 3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a non- ventilated, enclosed adapter housing, measured at 50 °C ambient temperature. 4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature.
Figure 3. Package Diagrams for FSQ510(M) and FSQ510H 1, 2 4, 5, 6 GND This pin is the control ground and the SenseFET source. protection triggers, which shuts down the FPS. the sync comparator is 0.7V/0.1V. operating current for both startup and steady-state operation. 7 8 D High-voltage power SenseFET drain connection.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 4 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may dam age the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VSTR Vstr Pin Voltage 500 V VDS Drain Pin Voltage 700 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 Internally Clamped(5) V VSync Sync Pin Voltage -0.3 6.5 V 7-DIP 7-MLSOP 1.38 PD Total Power Dissipation 8-DIP 1.47 W Maximum Junction Temperature +150 TJ Recommended Operating Junction Temperature(6) -40 +140 °C TSTG Storage Temperature -55 +150 °C Notes: 6. The maximum value of the recommended operating junc tion temperature is limited by thermal shutdown. Thermal Impedance TA=25°C unless otherwise specified. Items are test ed with the standards JESD 51-2 and 51-10 (DIP). Symbol Parameter Value Unit 7-DIP, 7-MLSOP θJA Junction-to-Ambient Thermal Impedance (7) 90 °C/W θJC Junction-to-Case Thermal Impedance (8) 13 °C/W 8-DIP θJA Junction-to-Ambient Thermal Impedance (7) 85 °C/W θJC Junction-to-Case Thermal Impedance (8) 13 °C/W Notes: 7. Free-standing with no heatsink; without copper clad; m easurement condition - just before junction temperature TJ enters into TSD. 8. Measured on the DRAIN pin close to plastic interface.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 5 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter TElectrical Characteristics T J=25°C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit SenseFET Section BVDSS Drain-Source Breakdown Voltage VCC=0V, ID=100μA 700 V IDSS Zero-Gate-Voltage Drain Current V DS=700V 150 μA TJ=25°C, ID=180mA 28 32 RDS(ON) Drain-Source On-State Resistance TJ=100°C, ID=180mA 42 48 CISS Input Capacitance(9) V GS=11V 96 pF COSS Output Capacitance(9) V DS=40V 28 pF tr Rise Time(9) V DS=350V, ID=25mA 100 ns tf Fall Time(9) V DS=350V, lD=25mA 50 ns Control Section fS Initial Switching Frequency V CC=11V, VFB=5V, Vsync=0V 87.7 94.3 100.0 kHz ΔfS Switching Frequency Variation(9) -25°C < TJ < 125°C ±5 ±8 % IFB Feedback Source Current V CC=11V, VFB=0V 200 225 250 μA tBB Switching Blanking Time VCC=11V, VFB=1V, Vsync Frequency Sweep 7.2 7.6 8.2 μs tBW Valley Detection Window Time(9) 3.0 μs DMAX Maximum Duty Ratio V CC=11V, VFB=3V 54 60 66 % DMIN Minimum Duty Ratio V CC=11V, VFB=0V 0 % VSTART VFB=0V, VCC Sweep 8.0 8.7 9.4 V VSTOP UVLO Threshold Voltage After Turn-on, VFB=0V 6.0 6.7 7.4 V tS/S Internal Soft-Start Time V STR=40V, VCC Sweep 3 5 7 ms Burst-Mode Section VBURH 0.75 0.85 0.95 V VBURL 0.65 0.75 0.85 V HYS Burst-Mode Voltage V CC=11V, VFB Sweep 100 mV Protection Section ILIM Peak Current Limit di/dt=90mA/µs 280 320 360 mA VSD Shutdown Feedback Voltage VDS=40V, VCC=11V, VFB Sweep 4.2 4.7 5.2 V FSQ510H 4 5 6 IDELAY Shutdown Delay Current FSQ510(M) V CC=11V, VFB=5V 3.5 4.5 5.5 μA tLEB Leading-Edge Blanking Time(9) 360 ns TSD 130 140 150 °C HYS Thermal Shutdown Temperature(9) 60 °C Synchronous Section VSH VCC=11V, VFB=1V 0.55 0.70 0.85 V VSL Synchronous Threshold Voltage VCC=11V, VFB=1V 0.05 0.10 0.15 V tSync Synchronous Delay Time 180 200 220 ns Total Device Section IOP Operating Supply Current (Control Part Only) VCC=11V, VFB=5.5V 0.8 1.0 mA ICH Startup Charging Current V CC=VFB=0V,VSTR=40V 1.0 1.2 mA VSTR Supply Voltage V CC=VFB=0V, VSTR Sweep 27 V Note: 9. These parameters, although guaranteed, are not 100% tested in production.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 6 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Comparison between FSD210B and FSQ510 Function FSD210B FSQ510 Advantages of FSQ510 Control Mode Voltage Mode Current Mode Fast Response Easy-to-Design Control Loop Operation Method Constant Frequency PWM Valley Switching Operation Turn-on at Minimum Drain Voltage High Efficiency and Low EMI EMI Reduction Method Frequency Modulation Valley Switching Frequency Variation Depending on the Ripple of DC Link Voltage High Efficiency and Low EMI Soft-Start 3ms (Built-in) 5ms (B uilt-in) Longer Soft-Start Time Protection TSD TSD with Hysteresis Enhanced Thermal Shutdown Protection Power Balance Long T CLD Short T CLD Small Difference of Input Power between the Low and High Input Voltage Cases Power Ratings Less than 5W Under Open-Frame Condition at the Universal Line Input More than 6W Under Open-Frame Condition at the Universal Line Input More Output Power Rating Available due to the Valley Switching
- Startup: At startup, an internal high-voltage current
Figure 13. Startup Block
- Feedback Control : This device employs current-
input voltage is increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit : Because current-
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB) : At the instant the
LEB) after the SenseFET is turned on. Figure 14. Valley Switching Pulse-Width
- Synchronization : The FSQ510 (H or M) employs a
B winding voltage, as shown in Figure 15. Figure 15. Valley Switching Waveforms
- Protection Circuits : The FSQ510 (H or M) has two
power SenseFET until the fault condition is eliminated. improved without increasing cost. Figure 16. Auto Restart Protection Waveforms
4.1 Overload Protection (OLP) : Overload is defined as
Figure 17. Overload Protection
4.2 Thermal Shutdown (TSD) : The SenseFET and the
around 80°C, when normal operation resumes.
- Soft-Start : The FPS has an internal soft-start circuit
conditions for transformers, inductors, and capacitors.
- Burst-Mode Operation : To minimize power
SenseFET, reducing switching loss in standby mode.
Figure 21. 7-Lead, Dual In-line Package (DIP) the warranty therein, which covers Fairchild products.
5.08 MAX
0.33 MIN
B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILENAME AND REVSION: MKT-N08FREV2. Figure 22. 8-Lead, Dual In-line Package (DIP) the warranty therein, which covers Fairchild products.
Figure 23. 7-Lead, MLSOP the warranty therein, which covers Fairchild products.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 15 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter