FSD1000 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- Current Mode Control for Main Power
- V oltage Mode Control for Auxiliary Power
- Synchronized switching of Main and Auxiliary Power (70kHz)
- Internal Start-up Circuit
- Internal Soft Start for Auxiliary Power
- User Defined Soft Start for Main Power
- Pulse by Pulse Current Limiting
- Over Load Protection (Main : Latch Mode, Aux : Auto Restart Mode)
- Internal Over Temperature Protection
- Vcc Under V oltage Lockout
- Line Under voltage/ Over V oltage Lockout
- Burst Mode Operation for auxiliary power to reduce the Power Consumption in the Standby Mode
- Internal High V oltage SenseFET for auxiliary power Application
- SMPS for PC power
- LCD TV Power Supply
Description
FSD1000 is a Fairchild Power Switch (FPS) that is specially designed for SMPS of personal computer. This device is a high voltage power SenseFET combined with two PWM controllers in a single monolithic device; One is for main power and the other is for auxiliary power. The PWM controllers feature integrated oscillator, under voltage lockout, optimized gate driver and temperature compensated precise current sources for the loop compensation. This device also includes various fault protection circuits such as line under/ over voltage lock out, over voltage protection, over load protection and over temperature protection. Compared with discrete MOSFET and PWM controller solution, FSD1000 can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity and system reliability Typical Circuit FSD1000 Combo Fairchild Power Switch (FPSTM) Figure 1. Typical Application circuit
Figure 2. Functional Block Diagram of FSD1000
Pin Number Pin Name Pin Function Description 1V FB,AUX This pin is for the feedback control of the auxiliary power. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. Voltage mode control is employed for the auxiliary power and the duty cycle ratio of Internal MOSFET for the auxiliary power is proportional to the voltage of this pin. If the voltage of this pin exceeds 4.5V, the over load protection is triggered terminating the switching operation of the main and auxiliary power (Auto-restart mode protection). FB,MAIN This pin is for the feedback control of the main power. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. Current mode control is employed for the main power and the peak drain current of the external MOSFET for the main power is proportional to the voltage of this pin. If the voltage of this pin exceeds 7V, the over load protection is triggered disabling the gating output for the main power (Latch mode protection). 3S / S This pin is for the soft start of the main power. Soft start time is programmed by a capacitor on this pin. 4 Output This pin is for the gate drive of the external MOSFET of the main power. 5V c c This pin is the positive supply voltage input. During startup, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 13.5V, the internal high voltage current source is disabled and the power is supplied from auxiliary transformer winding. SENSE This pin is for the current sense of the external MOSFET for the main power. It is internally connected to the PWM comparator for the main. 7L S 1 This pin is for line under voltage detection. When the voltage of this in drops below 1.4V the main power is shutdown. When the voltage drops below 0.8V, the auxiliary power is shutdown. 8L S 2 This pin is for line over voltage detection and maximum duty cycle ratio change. The maximum duty cycle ratio is set to be 50% when the voltage of LS2 pin is higher than 2.4V. The maximum duty cycle ratio is increased to 67% when LS2 voltage goes below 2.0V. When the voltage of LS2 goes above 4.4V, the switching operations for the main and auxiliary powers are disabled to protect the switching devices. LIM This pin is for the current limit of the auxiliary power. The pulse-by-pulse current limit level of the internal SenseFET is programmed by a resistor on this pin. 10 NC 11 Drain This pin is the high voltage power SenseFET drain. It is designed to drive the auxiliary transformer directly.
12 V STR
This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 13V, the internal current source is disabled.
Figure 3. Pin Configuration (Top View)
9 GND
4 GND
(Ta=25°C, unless otherwise specified) Parameter Symbol Value Unit Maximum Vstr Pin Voltage V STR,MAX 700 V Continuous SenseFET Drain Current (TC=25°C) I D 2A DC Maximum Supply Voltage V CC,MAX 20 V Input Voltage Range V FB,MAIN / VFB,AUX -0.3 to VSD V Operating Ambient Temperature T A -25 to +85 °C Storage Temperature Range T STG -55 to +150 °C
Electrical Characteristics
(Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production Parameter Symbol Condition Min. Typ. Max. Unit SENSEFET SECTION Drain-Source Breakdown Voltage BV dss VCC = 0V, ID = 100µA 700 - - V Off-State Current I dss VDS = 560V - - 100 µA On-State Resistance R DS(ON) Tj = 25°C ID = 100mA - 7.8 9.0 Ω Tj = 100°C ID = 100mA - 12.9 15.0 Ω Rising Time 2 (1) TR2 VDS = 350V, ID = 500mA - 100 - ns Falling Time 2 (1) TF2 VDS = 350V, lD = 500mA - 50 - ns Leading Edge Blanking(1) TLEB - - 250 - ns Pulse-by-pulse current limit I LIM With 33Ω resistor between ILIM pin and ground pin 0.8 1.0 1.2 A CONTROL SECTION Switching Frequency Fosc Tj = 25 °C 6 16 77 3k H z Main Feedback Source Current I FB,MAIN Ta = 25°C, VFB,MAIN = 0V 0.6 0.7 0.8 mA Shutdown Main Delay Current I DELAY ,MAIN Ta = 25°C 5V < VFB,MAIN < VSD,MAIN 3.5 5.0 6.5 uA Aux. Feedback Source Current I FB,MAIN Ta = 25°C, VFB,AUX = 0V 0.3 0.4 0.5 mA Shutdown Aux. Delay Current I DELAY ,MAIN Ta = 25°C 3V < VFB,AUX < VSD,AUX 3.5 5.0 6.5 uA Maximum Duty Cycle Dmax VFB,AUX = 3.5V 1.4V < LS2 < 2V 62 67 72 % Maximum Duty Cycle Dmax VFB,AUX = 3.5V 2V < LS2 < 4.4V 45 50 55 % Minimum Duty Cycle Dmin V FB,AUX = 0V - 0 0 % UVLO Threshold Voltage Vstart - 12.5 13.5 14.5 V Vstop After turn on 8.5 9.5 10.5 V SOFT START SECTION Soft Start Current I SOFT - 3 54 55 5u A Internal Soft Start Time T SS -- 1 0 - m s Internal Time Delay T d -- 3 0 - m s PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) TSD (Note 1) 140 160 - °C Shutdown Main Feedback Voltage V SD,MAIN - 6.0 7.0 8.0 V Shutdown Aux. Feedback Voltage V SD,AUX Vfb = 4V 4.0 4.5 5.0 V OUTPUT SECTION Rising Time 1 (1) TR1 Ta = 25°C, CL = 100pF - 45 150 ns Falling Time 1 (1) TF1 Ta = 25°C, CL = 100pF - 35 150 ns
Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit LINE SENSE SECTION Line Over Voltage BUS OVP - 4.0 4.4 5.0 V PWM Max Duty Control Voltage Max Duty - 2.0 2.4 2.8 V Hysteresis - - 400 - mV Main Off Voltage Main OFF - 1.17 1.4 1.63 V Hysteresis - - 280 - mV Aux. Off Voltage Aux OFF - 0.67 0.8 0.93 V Hysteresis - - 200 - mV BURST MODE SECTION Burst Mode Voltage BURST - - 0.7 - V Hysteresis - - 200 - mV TOTAL DEVICE SECTION Start up Chragng Current I ch VCC = 0V, VSTR = min. 30V - 1.5 2.3 mA Operating Supply Current I op Ta = 25°C, VCC = 18V - 4 5 mA
- 1. 1. 1. Startup : At startup, an internal high voltage current
figure 4. When Vcc reaches 13.5 V , the FPS begins switching starts up with a time delay of 30ms. Figure 4. Internal startup circuit
- Feedback Control : FSD1000 has two PWM controllers
auxiliary power controls the internal SenseFET.
2.1 Feedback Control for the main power : Figure 5
illustrates the simplified PWM block for the main power. The current mode control is employed for the main power. placed between this pin and GND.
2.2 Feedback Control for the auxiliary power : Figure 6
Figure 5. PWM control block for the main power Figure 6. PWM control block for the auxiliary power
- Protection Circuit : Besides pulse-by-pulse current limit,
6 Vstr
the AC line as shown in Figure 8. Figure 7. Auto restart mode protection Figure 8. Latch mode protection
3.1 Over Load Protection : Over load means that the load
current exceeds a pre-set level due to an abnormal situation. coupler transistor current increasing feedback voltage (Vfb).
3.2 Line Under voltage lockout : The switching operation
power is terminated when this voltage goes below 0.8V.
3.3 Over voltage protection : In an abnormal situation such
3.4 Line Over voltage protection : When the voltage of
3.5 Over Temperature Protection : The thermal shutdown
- Burst Mode Operation : In order to minimize the power
Typical application circuit
- Low standby mode power consumption (<1W at 240V ac input and 0.5W load)
- Low component count
- Enhanced system reliability through various protection functions
- Internal soft-start (10ms) 1. Schematic Application Output power Input voltage Output voltage (Max current) PC power supply 110W Universal input with voltage doubler Main power : 5V (12A), 3.3V (12A) Aux. power : 5V (2A) 817A GND_S R210 4.7k IC2 TL431 C203 472 C201 472 Is D201 C108 222,1kV 1 2 R214 10k 1 2 R101 500K R206 1 2 R216 10k 1 2 R205 1 2 EI 3329 14 1 8 7 3.3V R211 33k 1 2 R201 C114 222,1kV 1 2 C206 2200uF,10V 2 1 MBRF3060PT Gate t RT1 10D9 GND_P R212 1 2 C202 472 R208 3.2k 1 2 BD1 GSIB660 GND_S Is R209 1 2 C208 470uF, 16V 2 1 R111 10k 1 2 D101 UF4007 1 2 C110 47uF,50V R108 50K/3W R110 D103 1N4745 L201 EER2834 GND_P L202 2uH12 C105222/3kV 1 2 SW SPDT
3 R213
5V_aux GND_S 2N2222 IC1 TL431 VDC C107 470uF,200V D203 GP30G D102 UF4004 1 2 GND_S R203 C205 2200uF,10V 2 1 C104 222/ 3kV 1 2 C101 473/ 275VAC 1 2 C210 100nF1 2 R112 C207 470uF,16V 2 1 GND_P R207 33k 1 2 R104 33K/3W FUSE R107 10/ 0.5W C115 473 1 2 VFB1 C106 470uF,200V Gate C102 473/ 275VAC 1 2 MBRF3060PT VDC R109 30k R202 R204 D104 UF4003 1 2 EE1625 10 1 R103 10K C111 103 1 2 GND_P VFB1 D106 UF4007 C103 222/ 3kV 1 2 LF1 GND_S C109 102 C112 473 1 2 GND_P R106 0.1/ 2W JP2 HEADER 3 Drain FSD1000 6 7 1413 VFB.aux VFB.main S/S Output Vcc Ise nse LS1 LS2 I _LI M NC GND GND Vst art Drain R102 500K GND_S C209 47nF 1 2 D202 Line f ilter VFB2 GND_P Drain VDC C204 472 GND_P GND_S GND_P LS R105 D105 1N4745 GND_P GND_S LS 817A R215 10k 1 2 VFB2 GND_P D S G FQA10N80 3 2
2.1 Main Transformer Schematic Diagram
CORE : EI3329 BOBBIN : EI3329
2.2 Main Transformer Winding Specification
2.3 Main Transformer Electrical Characteristics
No Pin (s → f) Wire Turns Winding Method NP/2 1 → 30 . 5 φ × 1 24 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N3.3V 10 → 80 . 4 φ × 6 2 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N5V 14→ 12 0.4 φ × 6 3 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers NP/2 3 → 50 . 5 φ × 1 24 Solenoid Winding Outer Insulation: Polyester Tape t = 0.050mm, 2Layers Pin Specification Remarks Inductance 1 - 5 9mH ± 10% 100kHz, 1V Leakage Inductance 1 - 5 10uH Max 2 nd all short *T H E' ' MARKS ARE START POINT. 61 0 +5V +3.3V NP/2 NP/2 NP/2 NP/2 Bobbin BOTTOM TOP N3.3V N5V
3.1 Main inductor Schematic Diagram
CORE : EER2834 BOBBIN : EER2834
3.2 Main inductor Winding Specification
3.3 Main inductor Electrical Characteristics
No Pin (s → f) Wire Turns Winding Method N5V 1 → 12 0.4 φ × 8 9 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N3.3V 6 → 70 . 4 φ × 8 6 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Pin Specification Remarks Inductance 1 - 12 15 uH ± 10% 100kHz, 1V *T H E' ' MARKS ARE START POINT. 12345 11987 N3.3V N5V N3.3V Bobbin TOPN5V
4.1 Auxiliary Transformer Schematic Diagram
CORE : EE1625 BOBBIN : EE1625
4.2 Auxiliary Transformer Winding Specification
4.3 Auxiliary Transformer Electrical Characteristics
No Pin (s → f) Wire Turns Winding Method NP/2 4 → 50 . 1 5 φ 75 Solenoid Winding N5V 8 → 70 . 5 φ 9 Solenoid Winding NVcc 2 → 10 . 2 φ 25 Solenoid Winding NP/2 5 → 60 . 1 5 φ 75 Solenoid Winding Pin Specification Remarks Inductance 4 - 6 1.35mH ± 10% 100kHz, 1V Leakage Inductance 4 - 6 60uH Max 2 nd all short *T H E' ' MARKS ARE START POINT. +5V NP/2 NP/2 NP/2 NP/2 Bobbin BOTTOM TOP N5V NVcc 3㎜NVcc
- Layout Auxiliary Transformer Electrical Characteristics
7/9/04 0.0m 001 2004 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
Product Number Package Package Marking Rdson max FSD1000 12-DIPH FSD1000 9 Ω