FSCM0565R FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- Internal Avalanche Rugged Sense FET
- Low startup current (max 40uA)
- Low power consumption under 1 W at 240V AC & 0.4W load
- Precise Fixed Operating Frequency (66kHz)
- Frequency Modulation for low EMI
- Pulse by Pulse Current Limiting (Adjustable)
- Over V oltage Protection (OVP)
- Over Load Protection (OLP)
- Thermal Shutdown Function (TSD)
- Auto-Restart Mode
- Under V oltage Lock Out (UVLO) with hysteresis
- Built-in Soft Start (15ms) Application
- SMPS for VCR, SVR, STB, DVD & DVCD
- Adaptor
- SMPS for LCD Monitor
Description
The FSCM0565R is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform well suited for cost effective designs of flyback converters. Table 1. Maximum Output Power
- Typical continuous power in a non-ventilated enclosed
adapter measured at 50°C ambient.
- Maximum practical continuous power in an open frame
- 230 VAC or 100/115 VAC with doubler.
Figure 1. Typical Flyback Application
Figure 2. Functional Block Diagram of FSCM0565R
Figure 3. Pin Configuration (Top View) 2 GND This pin is the control ground and the SenseFET source. power is supplied from auxiliary transformer winding.
4 Feedback (FB)
This pin is internally connected to the inverting input of the PWM comparator. left floating, the typical current limit will be 2.5A.
(Ta=25°C, unless otherwise specified) Notes: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 30mH, V DD = 50V, RG = 25Ω , starting Tj = 25°C 4. L = 13uH, starting Tj = 25°C Parameter Symbol Value Unit Drain-Source (GND) Voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (2) IDM 20 A DC Continuous Drain Current (TO-220) @ Tc = 25°C @ T C=100°C ID 5A DC ID 3.2 A DC Continuous Drain Current (D2-PAK) @ Tc = 25°C @ T C=100°C ID 2.9 A DC ID 1.9 A DC Supply Voltage V CC 20 V Analog Input Voltage Range V FB -0.3 to VCC V Total Power Dissipation (D2-PAK) PD 75 W Derating 0.6 W/ °C Total Power Dissipation (TO-220) PD 120 W Derating 0.96 W/ °C Operating Junction Temperature T J Internally limited °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature Range T STG -55 to +150 °C ESD Capability, HBM Model (All pins excepts for Vstr and Vfb) - 2.0 (Vcc-Vfb=1.0kV) kV ESD Capability, Machine Model (All pins excepts for Vstr and Vfb) - 300 (Vcc-Vfb=100V) V
Electrical Characteristics
(Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sense FET SECTION Drain source breakdown voltage BV DSS VGS = 0V, ID = 250µA 650 - - V Zero gate voltage drain current I DSS VDS = Max, Rating VGS = 0V - - 500 µA Static drain source on resistance R DS(ON) VGS = 10V, ID = 2.3A - 1.76 2.2 Ω Output capacitance C OSS VGS = 0V, VDS = 25V, f = 1MHz -7 8-p F Turn on delay time T D(ON) VDD= 325V, ID= 5A (MOSFET switching time is essentially independent of operating temperature) -2 2- ns Rise time T R -5 2- Turn off delay time T D(OFF) -9 5- Fall time T F -5 0- CONTROL SECTION Initial frequency F OSC VCC=14V, VFB=5V 60 66 72 kHz Modulated frequency range ∆Fmod -- ± 3 - k H z Frequency modulation cycle T mod -- 4 - m s Voltage stability F STABLE 10V≤VCC≤17V 0 1 3 % Temperature stability ∆FOSC −25°C≤Ta≤+85°C- ± 5 ± 1 0 % Maximum duty cycle D MAX -7 5 8 0 8 5 % Minimum duty cycle D MIN -- - 0 % Start threshold voltage V START VFB=GND 11 12 13 V Stop threshold voltage V STOP VFB= G N D 789V Feedback source current I FB VFB=GND 0.7 0.9 1.1 mA Soft-start time T SS -1 0 1 5 2 0 m s BURST MODE SECTION Burst Mode Voltages VBH Vcc=14V 0.4 0.5 0.6 V VBL Vcc=14V 0.24 0.3 0.36 V
Notes: 1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2% 2. These parameters, although guaranteed at the design, are not tested in mass production. 3. These parameters, although guaranteed, are tested in EDS (wafer test) process. 4. These parameters indicate the inductor current. 5. This parameter is the current flowing into the control IC. PROTECTION SECTION Peak current limit I LIM VCC=14V, VFB=5V 2.2 2.5 2.8 A Over voltage protection V OVP -1 8 1 9 2 0 V Thermal shutdown temperature T SD 130 145 160 °C Shutdown delay current I DELAY VFB=4V 3.5 5.3 7 µA Shutdown feedback voltage V SD VFB>5.5V 5.5 6 6.5 V TOTAL DEVICE SECTION Startup current I start -2 0 4 0 µA Operating supply current IOP(MIN) VCC=10V, VFB=0V -2 . 55m A IOP(MAX) VCC=20V, VFB=0V
Comparison Between FSDM0565RB and FSCM0565R Function FSDM0565RB FSCM0565R Frequency modulation N.A. Available
- Modulated frequency range (DF mod) = ±3kHz
- Frequency modulation cycle (T mod) = 4ms Pulse-by-pulse current limit • Internally fixed (2.25A) • Programmable using external resistor (2.5A max) Internal Startup Circuit • Available • N.A. (Requires startup resistor)
- Startup current : 40uA (max)
Typical Performance Characteristics (These Characteristic Graphs are Normalized at Ta= 25°C) Startup Current vs. Temp Start Threshold Voltage vs. Temp Stop Threshold Voltage vs. Temp Initial Freqency vs. Temp Maximum Duty Cycle vs. Temp Feedback Source Current vs. Temp 0.60 0.80 1.00 1.20 1.40 1.60 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Start up Current (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature( ℃) Start Threshold Voltage (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Stop Threshold Voltage (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Initial Frequency (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature(℃) Maximum Duty Cycle (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature( ℃) FB Source Current (Normalized to 25 ℃)
Typical Performance Characteristics (Continued) (These Characteristic Graphs are Normalized at Ta= 25°C) ShutDown Feedback Voltage vs. Temp ShutDown Delay Current vs. Temp Bust Mode Enable Volage vs. Temp Burst Mode Disable Voltage vs. Temp Mavimum Drain Current vs. Temp Operating Supply Current vs. Temp 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature( ℃) Shutdown FB Voltag e (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature( ℃) Shutdown Delay Curren t (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 -50 -25 0 25 50 75 100 125 Junction Temperature( ℃) Burst Mode Enable Voltag e (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 - 5 0- 2 5 0 2 5 5 0 7 51 0 0 1 2 5 Junction Temperature(℃) Burst Mode Disable Voltag e (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 Junction Temperature(℃) Maximum Drain Current (Normalized to 25 ℃) 0.80 0.88 0.96 1.04 1.12 1.20 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 Junction Temperature(℃) Operating Supply Current (Normalized to 25 ℃)
- 1. 1. 1. Startup : Figure 4 shows the typical startup circuit and
transformer auxiliary winding for FSCM0565R application. current consumed by FPS (Icc) and the supply voltage (Vcc). Figure 4. Startup circuit Figure 5. Relation between operating supply current and charged to the start voltage and FPS will fail to start up.
- Feedback Control : FSCM0565R employs current mode
typically used to implement the feedback network.
2.1 Pulse-by-pulse current limit : Because current mode
Figure 6. Pulse width modulation (PWM) circuit
4 OSC
2.2 Leading edge blanking (LEB) : At the instant the
capacitance and secondary-side rectifier reverse recovery.
- Protection Circuit : The FSCM0565R has several self
voltage protection (OVP) and thermal shutdown (TSD). Figure 7. Auto restart operation
3.1 Over Load Protection (OLP) : Overload is defined as
is typical for most applications. Figure 8. Over load protection
3.2 Over voltage Protection (OVP) : If the secondary side
3.3 Thermal Shutdown (TSD) : The Sense FET and the
- Frequency Modulation : EMI reduction can be
than the band width measured by the EMI test equipment. frequency changes from 63KHz to 69KHz in 4ms. Figure 9. Frequency Modulation
- Soft Start : The FSCM0565R has an internal soft start
reduce the stress on the secondary diode during startup.
- Burst operation : In order to minimize power dissipation
switching loss in standby mode. Figure 10. Waveforms of burst operation
Typical application circuit
- High efficiency (>81% at 85Vac input)
- Low standby mode power consumption (<1W at 240V ac input and 0.4W load)
- Low component count
- Enhanced system reliability through various protection functions
- Low EMI through frequency modulation
- Internal soft-start (15ms) Key Design Notes
- The delay time for over load protection is designed to be about 50ms with C106 of 47nF. If a faster triggering of OLP is required, C106 can be reduced to 22nF.
- Using a resistor R106 on the current limit pin (#5), the pule-by-pulse current limit level is reduced to about 2A.
- Zener diode ZD102 is used for a safety test such as UL. When the drain pin and feedback pin are shorted, the zener diode fails and remains short, which causes the fuse (F1) blown and prevents explosion of the opto-coupler (IC301). This zener diode also increases the immunity against line surge. 1. Schematic Application Output power Input voltage Output voltage (Max current) LCD Monitor 40W Universal input (85-265Vac) 5V (2.0A) 12V (2.5A) C102 220nF 275VAC LF101 23mH C101 220nF 275VAC RT1 5D-9 FUSE 250V C103 100uF 400V R103 56kΩΩΩΩ C104 2.2nF 1kV D101 UF 4007 C106 47nF 50V C105 22uF 50V D102 TVR10G R104 5ΩΩΩΩ EER3016 BD101 2KBP06M3N257 R101 560kΩΩΩΩ FSCM0565RC Ilimit Vfb Vcc Drain GND ZD101 22V D202 MBRF10100 C201 1000uF 25V C202 1000uF 25V L201 12V, 2.5A D201 MBRF1045 C203 1000uF 10V C204 1000uF 10V L202 5V, 2A R201 1kΩΩΩΩ R202 1.2kΩΩΩΩ R204 5.6kΩΩΩΩ R203 10kΩΩΩΩ C205 47nF R205 5.6kΩΩΩΩ C301 4.7nF IC301 H11A817A IC201 KA431 R102 500kΩΩΩΩ R105 500kΩΩΩΩ R106 10kΩΩΩΩ 1/4W ZD102 10V
- Transformer Schematic Diagram 3.Winding Specification 4.Electrical Characteristics 5. Core & Bobbin Core : EER 3016 Bobbin : EER3016 Ae(mm2) : 96 No Pin (s → f) Wire Turns Winding Method Na 4 → 50 . 2 φ × 1 8 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Np/2 2 → 10 . 4 φ × 1 18 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N12V 10 → 80 . 3 φ × 3 7 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers N5V 7 → 60 . 3 φ × 3 3 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Np/2 3 → 20 . 4 φ × 1 18 Solenoid Winding Outer Insulation: Polyester Tape t = 0.050mm, 2Layers Pin Specification Remarks Inductance 1 - 3 570uH ± 10% 100kHz, 1V Leakage Inductance 1 - 3 10uH Max 2 nd all short EER3016 Np/2 N 12V Na 5 6 Np/2 N5V
6.Demo Circuit Part List Part Value Note Part Value Note Fuse C301 4.7nF Polyester Film Cap. F101 2A/250V NTC Inductor RT101 5D-9 L201 5uH Wire 1.2mm Resistor L202 5uH Wire 1.2mm R101 560K 1W R102 500K 1/4W R103 56K 2W R104 5 1/4W Diode R105 500K 1/4W D101 UF4007 R106 10K 1/4W D102 TVR10G R201 1K 1/4W D201 MBRF1045 R202 10K 1/4W D202 MBRF10100 R203 1.2K 1/4W ZD101 22V Zener diode R204 5.6K 1/4W ZD102 10V Zener diode R205 5.6K 1/4W Bridge Diode BD101 2KBP06M 3N257 Bridge Diode Capacitor C101 220nF/275VAC Box Capacitor Line Filter C102 220nF/275VAC Box Capacitor LF101 23mH Wire 0.4mm C103 100uF/400V Electrolytic Capacitor IC C104 10nF/1kV Ceramic Capacitor IC101 FSCM0565RC FPS TM(7A,650V) C105 22uF/50V Electrolytic Capacitor IC201 KA431(TL431) Voltage reference C106 47nF/50V Ceramic Capacitor IC301 H11A817A Opto-coupler C201 1000uF/25V Electrolytic Capacitor C202 1000uF/25V Electrolytic Capacitor C203 1000uF/10V Electrolytic Capacitor C204 1000uF/10V Electrolytic Capacitor C205 47nF/50V Ceramic Capacitor
Package Dimensions (Continued) TO-220-5L(Forming)
Ordering Information
Product Number Package Marking Code BVdss Rds(on)Max. FSCM0565RD D2-PAK-5L CM0565RD 650V 2.2 Ω FSCM0565RCYDTU TO-220-5L CM0565RC 650V 2.2 Ω
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