FSB50250AT

FSB50250AT FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 500V R DS(on)=3.8W(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens- ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• HVIC temperature sensing
• Embedded bootstrap diode in the package
• RoHS compliant

Applications

• Three-phase inverter driver for small power ac motor drives General Description FSB50250AT is a tiny smart power module (SPM ®) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB50250AT provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based power module or one-chip solution. The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50250AT is the best solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference.

2 www.fairchildsemi.com FSB50250AT Rev. A FSB50250AT Smart Power Module (SPM®) Absolute Maximum Ratings Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified) Thermal Resistance Total System Note: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Symbol Parameter Conditions Rating Units VPN DC Link Input Voltage, Drain-source Voltage of each FRFET 500 V *ID25 Each FRFET Drain Current, Continuous TC = 25°C 1.2 A *ID80 Each FRFET Drain Current, Continuous TC = 80°C 0.9 A *IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100ms 3.1 A *IDRMS Each FRFET Drain Current, Rms TC = 80°C, FPWM < 20KHz 0.6 Arms *PD Maximum Power Dissipation TC = 25°C, For Each FRFET 13.4 W Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between VCC and COM 20 V VBS High-side Bias Voltage Applied between VB and VS 20 V VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V Symbol Parameter Conditions Rating Units VRRMB Maixmum Repetitive Reverse Voltage 500 V * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A Symbol Parameter Conditions Rating Units RqJC Junction to Case Thermal Resistance Each FRFET under inverter operat- ing condition (Note 1) 9.3 °C/W Symbol Parameter Conditions Rating Units TJ Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Con- nection pins to heatsink 1500 Vrms

Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

1 COM IC Common Supply Ground

2 VB(U) Bias Voltage for U Phase High Side FRFET Driving

3 VCC(U) Bias Voltage for U Phase IC and Low Side FRFET Driving

4 IN(UH) Signal Input for U Phase High-side

5 IN(UL) Signal Input for U Phase Low-side

7 VB(V) Bias Voltage for V Phase High Side FRFET Driving

8 VCC(V) Bias Voltage for V Phase IC and Low Side FRFET Driving

9 IN(VH) Signal Input for V Phase High-side

10 IN(VL) Signal Input for V Phase Low-side

11 Vts Output for HVIC temperature sensing

12 VB(W) Bias Voltage for W Phase High Side FRFET Driving

13 VCC(W) Bias Voltage for W Phase IC and Low Side FRFET Driving

14 IN(WH) Signal Input for W Phase High-side

15 IN(WL) Signal Input for W Phase Low-side

17 P Positive DC–Link Input

18 U, VS(U) Output for U Phase & Bias Voltage Ground for High Side FRFET Driving

19 NU Negative DC–Link Input for U Phase

20 NV Negative DC–Link Input for V Phase

21 V, VS(V) Output for V Phase & Bias Voltage Ground for High Side FRFET Driving

22 NW Negative DC–Link Input for W Phase

23 W, VS(W) Output for W Phase & Bias Voltage Ground for High Side FRFET Driving

4 www.fairchildsemi.com FSB50250AT Rev. A FSB50250AT Smart Power Module (SPM®) Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified) Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified) Note: 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 2. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir- cuit that is same as the switching test circuit. 4. Vts is only for sensing temperature of module and cannot shutdown MOSFETs automatically. 5. Built in bootstrap diode includes around 15Ωresistance characteristic. Please refer to Figure 2. Symbol Parameter Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VIN= 0V, ID = 1mA (Note 1) 500 - - V IDSS Zero Gate Voltage Drain Current VIN= 0V, VDS = 500V - - 1 mA RDS(on) Static Drain-Source On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 0.5A - 2.5 3.8 W VSD Drain-Source Diode Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = -0.5A - - 1.2 V tON Switching Times VPN = 300V, VCC = VBS = 15V, ID = 0.5A VIN = 0V « 5V, Inductive load L=3mH High- and low-side FRFET switching (Note 2) - 1150 - ns tOFF - 950 - ns trr - 190 - ns EON - 40 - mJ EOFF - 10 - mJ RBSOA Reverse-bias Safe Oper- ating Area VPN = 400V, V CC = V BS = 15V, I D = I DP, VDS=BVDSS, TJ = 150°C High- and low-side FRFET switching (Note 3) Full Square Symbol Parameter Conditions Min Typ Max Units IQCC Quiescent VCC Current VCC=15V, VIN=0V Applied between VCC and COM - - 200 mA IQBS Quiescent VBS Current VBS=15V, VIN=0V Applied between VB(U)-U, VB(V)-V, VB(W)-W - - 100 mA UVCCD Low-side Undervoltage Protection (Figure 8) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V UVBSD High-side Undervoltage Protection (Figure 9) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V Vts HVIC Temperature sens- ing voltage output VCC=15V, THVIC=25°C(Note 4) 600 790 980 mV VIH ON Threshold Voltage Logic High Level Applied between IN and COM 2.9 - - V VIL OFF Threshold Voltage Logic Low Level - - 0.8 V Symbol Parameter Conditions Min Typ Max Units VFB Forward Voltage IF = 0.1A, TC = 25°C(Note 5) - 2.5 - V trrB Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns

Figure 2. Built in Bootstrap Diode Characteristics(typ.)

1. About pin position, refer to Figure 2.
2. RC coupling(R5 and C5, R4 and C6) and C4 at each input of SPM® and Micom are useful to prevent improper input signal caused by surge noise.
3. The voltage drop across R3 affects the low side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low side

MOSFET. For this reason, the voltage drop across R3 should be less than 1V in the steady-state.

1. Ground wires and output terminals, should be thick and short in order to avoid surge voltage and malfunction of HVIC.
2. All the filter capacitors shoud be connected close to SPM®, and they should have good characteristics for rejecting high-frequency ripple current.

Figure 10. Example of Application Circuit

9 www.fairchildsemi.com FSB50250AT Rev. A FSB50250AT Smart Power Module (SPM®) Detailed Package Outline Drawings Dimension unit : [mm]

10 www.fairchildsemi.com FSB50250AT Rev. A FSB50250AT Smart Power Module (SPM®) Rev. I38 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ mSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. 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