FSB50250AB

FSB50250AB ONSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semico nductor Components Industries, LLC dba ON Semiconductor or its subsid iaries in the United States and/or other countries. ON Semiconductor ow ns the rights to a number to make changes without further notice to any products herein. ON Semicon ductor makes no warranty, representation or guarantee regarding the s uitability of its products for any particular purpose, nor does ON Semico nductor assume any liability arising out of the application or use of any product or circuit, and specifica lly disclaims any and all liability, including without limitation spe cial, consequential or incidental damages. Buyer is responsible for i ts products and applications using ON Semiconductor products, including compliance with all laws, regul ations and safety requirements or standards, regardless of any suppor t or applications information provided by ON Semiconductor. “Typica l” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in diffe rent applications and actual performance may vary over time. All operat ing parameters, including “Typicals” must be validated for each custo mer application by customer’s technical experts. ON Semiconductor does not convey any license und er its patent rights nor the rights of others. ON Semiconductor products a re not designed, intended, or authorized for use as a critical compone nt in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classifica tion in a foreign jurisdiction or any devices intended for implantation i n the human body. Should Buyer purchase or use ON Semiconductor products fo r any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semico nductor and its officers, employees, subsidiaries, affiliates, and di stributors harmless against all claims, costs, damages, and expense s, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized use, even if such claim alleges th at ON Semiconductor was negligent regarding the design or manufacture o f the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literatu re is subject to all applicable copyright laws and is not for resale in any manne r.

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB50250AB Rev. A FSB50250AB Smart Power Module (SPM®) Motion-SPM January 2012 TM FSB50250AB Smart Power Module (SPM®)

Features

• 500V R DS(on)=3.8W(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens- ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• HVIC temperature sensing
• Embedded bootstrap diode in the package
• RoHS compliant

Applications

• Three-phase inverter driver for small power ac motor drives General Description FSB50250AB is a tiny smart power module (SPM ®) based on FRFET technology as a compact inverter solution for sma ll power motor drive applications such as fan motors and w ater suppliers. It is composed of 6 fast-recovery MOSFET (FRFET) , and 3 half-bridge HVICs for FRFET gate driving. FSB50250 AB provides low electromagnetic interference (EMI) characteris tics with optimized switching speed. Moreover, since it em ploys FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-base d power module or one-chip solution. The package is opti mized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50250AB is the best solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference.

2 www.fairchildsemi.com FSB50250AB Rev. A FSB50250AB Smart Power Module (SPM®) Absolute Maximum Ratings Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified) Thermal Resistance Total System Note: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Symbol Parameter Conditions Rating Units VPN DC Link Input Voltage, Drain-source Voltage of each FRFET 500 V *ID25 Each FRFET Drain Current, Continuous T C = 25°C 1.2 A *ID80 Each FRFET Drain Current, Continuous T C = 80°C 0.9 A *IDP Each FRFET Drain Current, Peak T C = 25°C, PW < 100ms 3.1 A *IDRMS Each FRFET Drain Current, Rms T C = 80°C, FPWM < 20KHz 0.6 A rms *PD Maximum Power Dissipation T C = 25°C, For Each FRFET 13.4 W Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between V CC and COM 20 V VBS High-side Bias Voltage Applied between V B and VS 20 V VIN Input Signal Voltage Applied between IN and COM -0.3 ~ V CC+0.3 V Symbol Parameter Conditions Rating Units VRRMB Maixmum Repetitive Reverse Voltage 500 V * IFB Forward Current T C = 25°C 0.5 A * IFPB Forward Current (Peak) T C = 25°C, Under 1ms Pulse Width 1.5 A Symbol Parameter Conditions Rating Units RqJC Junction to Case Thermal Resistance Each FRFET under inverter operat- ing condition (Note 1) 9.3 °C/W Symbol Parameter Conditions Rating Units TJ Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Con- nection pins to heatsink 1500 V rms

Figure 1. Pin Configuration and Internal Block Dia gram (Bottom View)

1 COM IC Common Supply Ground

2 V B(U) Bias Voltage for U Phase High Side FRFET Driving

3 V CC(U) Bias Voltage for U Phase IC and Low Side FRFET Driving

4 IN (UH) Signal Input for U Phase High-side

5 IN (UL) Signal Input for U Phase Low-side

7 V B(V) Bias Voltage for V Phase High Side FRFET Driving

8 V CC(V) Bias Voltage for V Phase IC and Low Side FRFET Driving

9 IN (VH) Signal Input for V Phase High-side

10 IN (VL) Signal Input for V Phase Low-side

12 V B(W) Bias Voltage for W Phase High Side FRFET Driving

13 V CC(W) Bias Voltage for W Phase IC and Low Side FRFET Driving

14 IN (WH) Signal Input for W Phase High-side

15 IN (WL) Signal Input for W Phase Low-side

16 V ts Output for HVIC temperature sensing

17 P Positive DC–Link Input

18 U, V S(U) Output for U Phase & Bias Voltage Ground for High Side FRF ET Driving

19 N U Negative DC–Link Input for U Phase

20 N V Negative DC–Link Input for V Phase

21 V, V S(V) Output for V Phase & Bias Voltage Ground for High Side FRF ET Driving

22 N W Negative DC–Link Input for W Phase

23 W, V S(W) Output for W Phase & Bias Voltage Ground for High Side F RFET Driving

4 www.fairchildsemi.com FSB50250AB Rev. A FSB50250AB Smart Power Module (SPM®) Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified) Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified) Note: 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 2. t ON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir- cuit that is same as the switching test circuit. 4. Vts is only for sensing temperature of module and cannot shutdown MOSFETs automatically. 5. Built in bootstrap diode includes around 15Ωresistance characteristic. Please refer to Figure 2. Symbol Parameter Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VIN= 0V, ID = 1mA (Note 1) 500 - - V IDSS Zero Gate Voltage Drain Current VIN= 0V, VDS = 500V - - 1 mA RDS(on) Static Drain-Source On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 0.5A - 2.5 3.8 W VSD Drain-Source Diode Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = -0.5A - - 1.2 V tON Switching Times VPN = 300V, VCC = VBS = 15V, ID = 0.5A VIN = 0V « 5V, Inductive load L=3mH High- and low-side FRFET switching (Note 2) - 1150 - ns tOFF - 950 - ns trr - 190 - ns EON - 40 - mJ EOFF - 10 - mJ RBSOA Reverse-bias Safe Oper- ating Area VPN = 400V, V CC = V BS = 15V, I D = I DP, VDS=BVDSS, TJ = 150°C High- and low-side FRFET switching (Note 3) Full Square Symbol Parameter Conditions Min Typ Max Units IQCC Quiescent VCC Current V CC=15V, VIN=0V Applied between V CC and COM - - 200 mA IQBS Quiescent VBS Current V BS=15V, VIN=0V Applied between VB(U)-U, VB(V)-V, VB(W)-W - - 100 mA UVCCD Low-side Undervoltage Protection (Figure 8) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V UVBSD High-side Undervoltage Protection (Figure 9) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V Vts HVIC Temperature sens- ing voltage output VCC=15V, THVIC=25°C(Note 4) 600 790 980 mV VIH ON Threshold Voltage Logic High Level Applied between IN and COM 2.9 - - V VIL OFF Threshold Voltage Logic Low Level - - 0.8 V Symbol Parameter Conditions Min Typ Max Units VFB Forward Voltage I F = 0.1A, TC = 25°C(Note 5) - 2.5 - V trrB Reverse Recovery Time I F = 0.1A, TC = 25°C - 80 - ns

Figure 2. Built in Bootstrap Diode Characteristics( typ.)

1. About pin position, refer to Figure 2.
2. RC coupling(R5 and C5, R4 and C6) and C4 at each input of SPM® and Micom are useful to prevent improper input signal caused by surge noise.
3. The voltage drop across R3 affects the low side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low side

MOSFET. For this reason, the voltage drop across R3 should be less than 1V in the steady-state.

1. Ground wires and output terminals, should be thick and short in order to avoid surge voltage and malfunction of HVIC.
2. All the filter capacitors shoud be connected close to SPM®, and they should have good characteristics for rejecting high-frequency ripple current.

Figure 10. Example of Application Circuit

9 www.fairchildsemi.com FSB50250AB Rev. A FSB50250AB Smart Power Module (SPM®) Detailed Package Outline Drawings Dimension unit : [mm]

10 www.fairchildsemi.com FSB50250AB Rev. A FSB50250AB Smart Power Module (SPM®) Rev. I38 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT A SSUME ANY LIABILITY ARISING OUT OF THE APPLICATION O R USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ mSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterf eiting Policy. Fairchild’s Anti-Counterfeiting Poli cy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web p age cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairc hild and our Authorized Distributors will stand beh ind all warranties and will appropriately address a nd warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative  Semiconductor Components Industries, LLC