DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Features

  • UL Certified No.E209204(UL1557)
  • 4 0 V , R DS(ON)=3.0 m max.) 3-phase MOSFET Inverter Module Including Control IC for Gate Drive and Protection.
  • Ceramic Substrate.
  • Three Separate Open-Emitter Pins from Low-Side MOSFETs for Three-Leg Current Sensing.
  • Single-Grounded Power Supply for Built-in HVIC.
  • Isolation Rating of 800 Vrms/min.

Applications

Motion Control - Home Appliance / Industrial Motor. General Description FSB43004A is a Motion SPM ® 45 LV module that Fairchild developed based on low-loss PowerTrench ® MOSFET technology as a compact motor drive inverter solution for small power applications supplied by low voltage battery. Figure 1. Packing Drawing

©2015 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series Integrated Power Functions

  • 4 0 V RDS(ON)= 2.1 mtyp.) inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions
  • For inverter high-side MOSFETs: gate drive circ uit, high-voltage isolated high-speed level shifting, Under-Voltage Lock-Out (UVLO) Protection.
  • For inverter low-side MOSFETs: gate drive ci rcuit, Under-Voltage Lock-Out (UVLO) Protection.
  • Fault signaling: corresponding to UV (low-side supply).
  • Input interface: active-HIGH interface, wor ks with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2.Top View

©2015 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series Pin Descriptions Pin Number Pin Name Pin Description

1 P Positive DC-Link Input

2 W W Phase Output

3 V V Phase Output

4 U U Phase Output

6N V Negative DC-Link Input 7N U Negative DC-Link Input 8V FO Fault Output 9I N (UL) PWM Input for Low-Side U Phase MOSFET Drive

10 IN (VL) PWM Input for Low-Side V Phase MOSFET Drive

11 IN (WL) PWM Input for Low-Side W Phase MOSFET Drive

12 COM Common Supply Ground

13 Vcc Common Supply Voltage for IC and Low-side MOSFET Drive

(UH) PWM Input for High-Side U Phase MOSFET Drive

15 IN (VH) PWM Input for High-Side V Phase MOSFET Drive

16 IN (WH) PWM Input for High-Side W Phase MOSFET Drive

17 V B(U) Supply Voltage for High-Side U Phase MOSFET Drive

18 V S(U) Supply Ground for High-Side U Phase MOSFET Drive

19 V B(V) Supply Voltage for High-Side V Phase MOSFET Drive

20 V S(V) Supply Ground for High-Side V Phase MOSFET Drive

21 V B(W) Supply Voltage for High-Side W Phase MOSFET Drive

22 V S(W) Supply Ground for High-Side W Phase MOSFET Drive

Figure 3. Internal Block Diagram

©2015 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.) Inverter Part 1st Note: 1. Rating value of marking “*” is calculation value or design factor. Control Part Total System Thermal Characteristics Symbol Parameter Conditions Rating unit VPN DC Link Input Voltage Drain-Source Voltage Applied between P - N(U), N(V), N(W) 40 V * ± ID Drain Current T C = 25°C, TJ ≤ 150°C 71 A TC = 100°C, TJ ≤ 150°C 47 A * ± IDP Peak Drain Current T C = 25°C, under 1ms Pulse Width, TJ ≤ 150°C 180 A * PD Maximum Power Dissipation T C = 25°C, per Chip, TJ ≤ 150°C 31 W TJ Operating Junction Temperature -40 ~ 150 °C Symbol Parameter Conditions Rating unit VCC Supply Voltage Applied between V CC - COM 20 V VBS Supply Voltage Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN PWM Signal Voltage Applied between IN (UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V CC+0.3 V IFO Fault Output Current Sink Current at V FO Pin 1 mA Symbol Parameter Conditions Rating unit TSTG Storage Temperature -40 ~ 150 °C VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Ceramic Substrate

800 V rms

Symbol Parameter Condition Min. Typ. Max. Unit Rth(j-c) Junction to Case Thermal Resistance Inverter MOSFET part(per 1/6 module) - - 3.92 °C/W

  1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET. VPN should be sufficiently less than this value considering the effect of the

stray inductance so that VDS should not exceed BVDSS in any case.

  1. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of MOSFET itself under the given gate driving condition inter-

nally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition

©2015 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series Control Part Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Unit IQCC Quiescent VCC Supply Current VCC = 15 V, VIN = 0 V VCC - COM - - 2.75 mA IQBS Quiescent VBS Supply Current VBS = 15 V, VIN = 0 V VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) -- 0 . 3 m A VFOH Fault Output Voltage 10 k  to 5 V Pull-up Normal 4.5 - - V VFOL Fault -- 0 . 5 V UVCCD Supply Circuit Under- Voltage Protection Detection Level 7.0 8.2 10.0 V UVCCR Reset Level 8.0 9.4 11.0 V UVBSD Detection Level 7.0 8.0 9.5 V UVBSR Reset Level 8.0 9.0 10.5 V tFOD Fault-Out Pulse Width 30 - - s VIN(ON) ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN(VL), IN(WL) - COM -- 2 . 6 V VIN(OFF) OFF Threshold Voltage 0.8 - - V Symbol Parameter Conditions Value Unit Min. Typ. Max. VPN Supply Voltage Applied between P - N (U), N(V), N(W) -2 0 -V VCC Control Supply Voltage Applied between V CC - C O M 1 3 . 51 5 1 6 . 5V VBS Control Supply Voltage Applied between V B(U) - V S(U), V B(V) - V S(V), VB(W) - VS(W) 1 3 . 01 5 1 8 . 5V dVCC/dt, dVBS/dt Control Supply Variation -1 - 1 V/ s VSEN Voltage for Current Sensing Applied between N U, NV, NW - COM (Including surge voltage) -4 - 4 V

Figure 5. Flatness Measurement Position

  1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3 cm)
  2. VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
  3. Input signal is High-Active type. There is a 5 kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommended for the prevention of
  4. Each capacitors should be mounted as close to the SPM® pins as possible.
  5. Relays are used at almost every systems of electrical equipment of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
  6. The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommended zener diode=24 / 1 W)

Figure 8. Typical Application Circuit

©2015 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD22AA.pdf

©2015 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com FSB43004A Rev. 1.1 FSB43004A Motion SPM® 45 LV Series