FSB32560

FSB32560 FAIRCHILD | Alldatasheet

Document overview

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• PDF pages: 16

Technical content

Features

• UL Certified No.E209204(SPM27-BC package)
• 600V-25A 3-phase IGBT inverter bridge including control ICs for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• AC 100V ~ 253V three-phase inverter drive for small power ac motor drives
• Home appliances applications li ke air conditioner and wash- ing machine
• Industrial applications like sewing machine General Description It is an advanced smart power module (SPM TM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low- power inverter-driven application like air conditioner and wash- ing machine. It combines optimiz ed circuit protection and drive matched to low-loss IGBTs. Sy stem reliability is further enhanced by the integrated under-voltage lock-out and short- circuit protection. The high speed built-in HVIC provides opto- coupler-less single-supply IGBT gat e driving capability that fur- ther reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. Bottom ViewTop View 26.8mm 44mm Bottom ViewTop View 26.8mm 44mm Figure 1.

2 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Integrated Power Functions

• 600V-25A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive ci rcuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 10 and 11.
• For inverter low-side IGBTs: Gate dr ive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Figure 2. (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Temperature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Temperature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (24) U (25) V (26) W Case Temperature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (21) NU (22) NV (23) NW (27) P (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) U V (26) W Case Temperature (TC) Detecting Point Ceramic Substrate (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) 13.3 19.1 13.3 19.1 Top View

3 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Pin Descriptions Pin Number Pin Name Pin Description 1V CC(L) Low-side Common Bias Voltage for IC and IGBTs Driving

2 COM Common Supply Ground

3I N (UL) Signal Input for Low-side U Phase 4I N (VL) Signal Input for Low-side V Phase 5I N (WL) Signal Input for Low-side W Phase 6V FO Fault Output 7C FOD Capacitor for Fault Output Duration Time Selection 8C SC Capacitor (Low-pass Filter) for Short-Current Detection Input 9I N (UH) Signal Input for High-side U Phase

10 V CC(UH) High-side Bias Voltage for U Phase IC

11 V B(U) High-side Bias Voltage for U Phase IGBT Driving

12 V S(U) High-side Bias Voltage Ground for U Phase IGBT Driving

13 IN (VH) Signal Input for High-side V Phase

14 V CC(VH) High-side Bias Voltage for V Phase IC

15 V B(V) High-side Bias Voltage for V Phase IGBT Driving

16 V S(V) High-side Bias Voltage Ground for V Phase IGBT Driving

17 IN (WH) Signal Input for High-side W Phase

18 V CC(WH) High-side Bias Voltage for W Phase IC

19 V B(W) High-side Bias Voltage for W Phase IGBT Driving

20 V S(W) High-side Bias Voltage Ground for W Phase IGBT Driving

21 N U Negative DC–Link Input for U Phase

22 N V Negative DC–Link Input for V Phase

23 N W Negative DC–Link Input for W Phase

24 U Output for U Phase

25 V Output for V Phase

26 W Output for W Phase

27 P Positive DC–Link Input

4 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Internal Equivalent Circuit and Input/Output Pins Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT. Figure 3. COM VCC IN(UL) IN(VL) IN(WL) VFO C(FOD) C(SC) OUT(UL) OUT(VL) OUT(WL) NU (21) NV (22) NW (23) U (24) V (25) W (26) P (27) (20) VS(W) (19) VB(W) (16) VS(V) (15) VB(V) (8) CSC (7) CFOD (6) VFO (5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L) VCC VB OUT COM VSIN VB VS OUT IN COM VCC VCC VB OUT COM VSIN (18) VCC(WH) (17) IN(WH) (14) VCC(VH) (13) IN(VH) (12) VS(U) (11) VB(U) (10) VCC(UH) (9) IN(UH) VSL

5 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Inverter Part Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Total System Thermal Resistance Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Package Marking and Ordering Information Symbol Parameter Conditions Rating Units VPN Supply Voltage Applied between P- N U, NV, NW 450 V VPN(Surge) Supply Voltage (Surge) Applied between P- N U, NV, NW 500 V VCES Collector-emitter Voltage 600 V ± IC Each IGBT Collector Current T C = 25°C 25 A TC = 100°C 12 A PC Collector Dissipation T C = 25°C per One Chip 29 W TJ Operating Junction Temperature (Note 1) -20 ~ 125 °C Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH), V CC(L) - COM 20 V VBS High-side Control Bias Voltage Applied between V B(U) - V S(U), V B(V) - V S(V), V B(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL), IN(WL) - COM -0.3~17 V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC+0.3 V IFO Fault Output Current Sink Current at V FO Pin 5 mA VSC Current Sensing Input Voltage Applied between C SC - COM -0.3~V CC+0.3 V Symbol Parameter Conditions Rating Units VPN(PROT) Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 2μs 400 V TC Module Case Operation Temperature -20 °C≤ TJ ≤ 125°C, See Figure 2 -20 ~ 100 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoi dal, AC 1 minute, Connection Pins to ceramic substrate

2500 V rms

Symbol Parameter Conditions Min. Typ. Max. Units Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT part (per 1/6 module) - - 3.5 °C/W Rth(j-c)F Inverter FWD part (per 1/6 module) - - 4.7 °C/W Device Marking Device Package Reel Size Tape Width Quantity FSB32560 FSB32560 SPM27-BC - - 10

1. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.

For the detailed information, please see Figure 4. Figure 4. Switching Time Definition

7 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Units IQCCL Quiescent VCC Supply Current VCC = 15V IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA IQCCH VCC = 15V IN(UH, VH, WH) = 0V VCC(UH), VCC(VH), VCC(WH) - COM - - 200 μA IQBS Quiescent VBS Supply Current VBS = 15V IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) - - 500 μA VFOH Fault Output Voltage V SC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V VSC(ref) Short Circuit Trip Level V CC = 15V (Note 4) 0.45 0.5 0.55 V UVCCD Supply Circuit Under- Voltage Protection Detection Level 10.7 11.9 13.0 V UVCCR Reset Level 11.2 12.4 13.2 V UVBSD Detection Level 10 11 12 V UVBSR Reset Level 10.5 11.5 12.5 V tFOD Fault-out Pulse Width C FOD = 33nF (Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN(VL), IN(WL) - COM 3.0 - - V VIN(OFF) OFF Threshold Voltage - - 0.8 V Symbol Parameter Conditions Value Units Min. Typ. Max. VPN Supply Voltage Applied between P - N U, NV, NW - 300 400 V VCC Control Supply Voltage Applied between V CC(UH), VCC(VH), VCC(WH), VCC(L) - COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15 18.5 V dVCC/dt, dVBS/dt Control supply variation -1 - 1 V/ μs tdead Blanking Time for Preventing Arm-short For Each Input Signal 2.0 - - μs fPWM PWM Input Signal -20 °C ≤ TC ≤ 100°C, -20°C ≤ TJ ≤ 125°C - - 20 kHz VSEN Voltage for Current Sensing Applied between N U, NV, NW - COM (Including surge voltage) -4 4 V

Figure 5. Flatness Measurement Position

c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. Figure 8. Short-Circuit Current Protection (Low-side Operation only)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. (typ.)) Please refer to the note 5 for calculation method. that input signal agree with turn-off/turn-on threshold voltage. 7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2μs. 9) Each capacitor should be mounted as close to the pins of the SPM as possible. capacitor of around 0.1~0.22μF between the P&GND pins is recommended. 11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible. Figure 11. Typical Application Circuit

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14 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Detailed Package Outline Drawings (Continued)

15 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module Detailed Package Outline Drawings (Continued)

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 16 www.fairchildsemi.com FSB32560 Rev. A FSB32560 Smart Power Module DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELI ABILITY, FUNCTION OR DESIGN. FAI RCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PR ODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This data sheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ Rev. I15