FSA839 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
Pow er-Off Isolation (VCC=0 V) 0.8 Ω Maximum On Resistance (RON) for 4.5 V VCC 0.25 Ω Maximum RON Flatness for 4.5 V VCC Broad VCC Operating Range: 1.65 V to 5.5 V Fast Turn-On and Turn-Off Times Control Input Sw itching Thresholds Independent of VCC Break-Before-Make Enable Circuitry 0.4 mm WLCSP Packaging ESD Performance - HBM per JESD22-A114, I/O to GND: 8 kV - CDM per JESD22-C101: 500 V - IEC61000-4-2 Contact / Air: 8 kV / 15 kV
Applications
Cellular Phone Portable Media Player PDA
Description
The FSA839 is a high -performance Single-Pole / Double- Throw (SPDT) analog sw itch for audio applications driven by low -voltage (1.8 V) baseband processors or ASICs . The device features ult ra-low RON of 0.8 (maximum) at
4.5 V V CC and operates over the w ide V CC range of
1.65 V to 5.5 V. The device is fabricated w ith sub -micron CMOS technology to achieve fast sw itching speeds and is designed for break-before-make operation. The FSA8 39 interf aces betw een the low -voltage ASIC and regular audio amplifiers and CODECs operating up to a 5.5 V supply range . The control circuitry allow s for 1.8 V (typical) signals on the control pin (Sel).
Ordering Information
Temperatu re Range Top Mark Package Packing Method FSA839UCX -40°C to +85°C N3 6-Ball WLCSP, 0.4 mm Pitch Tape and Reel Figure 1. Analog Symbol
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stres sing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VCC Supply Voltage -0.5 6.5 V VSW Sw itch Voltage(1) -0.5 VCC + 0.5 V VIN Input Voltage(1) -0.5 6.5 V IIK Input Diode Current -50 mA ISW Sw itch Current (Continuous) 200 mA ISWPEAK Peak Sw itch Current (Pulsed at 1 ms Duration, <10% Duty Cycle) 400 mA PD Pow er Dissipation at 85°C 180 mW TSTG Storage Temperature Range -65 +150 °C TJ Maximum Junction Temperature +150 °C TL Lead Temperature (Soldering, 10 Seconds) +260 °C ESD Human Body Model (JEDEC: JESD22-A114) I/O to GND: A 8 kV All Pins 2 Charged Device Model (JEDEC: JESD22-C101) 500 V Machine Model (JEDEC: JESD22-A115) 100 V IEC6100-4-2 Discharge System Test Performed on ON Semiconductor’s FSA859 Applications Testing Board Contact 8 kV Air 15 Note: 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. Recommended Operating Conditions The Recommended Operating Conditions tab le defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VCC Supply Voltage 1.65 5.50 V SEL Control Input Voltage 0 1.95 V VSW Sw itch Input Voltage 0 VCC V TA Operating Temperature -40 +85 °C JA Thermal Resistance, Still Air 350 °C/W
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation All typical values are at 25°C unless otherw ise specified. Symbo l Parameter VCC (V) Conditions TA=+25°C TA=-40 to +85°C Unit VIH Input Voltage High 1.65 to 5.50 1.0 V VIL Input Voltage Low 1.65 to 5.50 0.57 V IIN Control Input Leakage 1.95 to
5.50 VSel=0 -2 2 -20 20 nA
INO(0FF), INC(OFF), Off-Leakage Current of Port B0 and B1(5) 5.50 A=1 V, 4.5 V B0 or B1=4.5, 1 V -10 10 -50 50 nA 3.60 A=1 V, 3.0V B0 or B1=3.0, 1V -10 10 -50 50 B0 or B1=2.3, 0.5V -10 10 -50 50 1.95 A=0.3 V, 1.65 V B0 or B1=1.65 ,0.3 V -5 5 -20 20 INO(On), INC(On) On-Leakage Current of Port B0 and B1(5)
5.50 A=Floating
B0 or B1=4.5, 1V -20 20 -100 100 nA
3.60 A=Floating
B0 or B1=3.0, 1 V -10 10 -20 20
2.70 A=Floating
B0 or B1=2.3, 0.5 V -10 10 -20 20
1.95 A=Floating
B0 or B1=1.65, 0.3 V -5 5 -20 20 IA(ON) On Leakage Current of Port A(5) 5.50 A=1 V, 4.5 V; B0 or B1=1 V, 4.5 V, or Floating -20 20 -100 100 nA 3.60 A=1V, 3.0VB0 or B1=1V, 3.0V, or Floating -10 10 -20 20 2.70 A=0.5 V, 2.3 V, B0 or B1=0.5 V, 2.3 V, or Floating -10 10 -20 20 1.95 A=0.3 V, 1.65 V; B0 or B1=0.3 V, 1.65 V, or Floating -5 5 -20 20 IOFF Pow er Off Leakage Current of Port A & Port B(5) 0 A=0 to 5.5 V RPD Sel Internal Pull- Dow n Resistor 1.65 to 1.95 2.0 MΩ ICC Quiescent Supply Current 5.50 VIN, VSEL =0 or VCC, IOUT=0 100 500 nA
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation
3.60 VIN, VSEL =0 or VCC,
IOUT=0 75 300
2.70 VIN, VSEL =0 or VCC,
IOUT=0 50 250
1.95 VIN, VSEL =0 or VCC,
IOUT=0 25 150 Continued on the following page…
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation All typical values are at 25°C unless otherw ise specified. Symbo l Parameter VCC (V) Conditions TA=+25°C TA=-40 to +85°C Unit ICCT Increase in ICC per Control Input 5.50 VSel = 1.8 V 26 40 50 µA 3.60 VSel = 1.8 V 5 15 20 2.70 VSel = 1.8 V 1 5 10 ICCZ Supply Current Sleep 5.50 VIN, VSel = Floating 0.5 1.0 µA RON Sw itch On Resistance(2,5)
4.50 IOUT=-100 mA,
B0 or B1=2.5 V 0.50 0.75 0.80 Ω
3.00 IOUT=-100 mA,
B0 or B1=2.0 V 0.75 0.90 1.20
2.25 IOUT=-100 mA,
B0 or B1=1.8 V 1.0 1.3 1.6
1.65 IOUT=-100 mA,
B0 or B1=1.2 V 2.5 5.0 7.0 ∆ RON On Resistance Matching Betw een Channels(3,5) B0 or B1=2.5 V 0.05 0.10 0.10 Ω B0 or B1=2.0 V 0.10 0.15 0.15 B0 or B1=1.8 V 0.15 0.20 0.20 B0 or B1=1.2 V 0.15 0.40 0.40 RFLAT(ON) On Resistance Flatness(4,5) 4.50 IOUT=-100 mA, B0 or B1=1.0V, 1.5 V, 2.5 V 0.075 0.250 0.250 Ω 3.00 IOUT=-100 mA, B0 or B1=0.8 V, 2.0 V 0.1 0.3 0.3 2.25 IOUT=-100 mA, B0 or B1=0.8 V, 1.8 V 0.25 0.50 0.60 1.65 IOUT=-100mA, B0 or B1=0.6 V, 1.2 V 3.5 Notes: 2. On resistance is determined by the voltage drop betw een A and B pins at the indicated current through the sw itch. 3. ∆ RON=RON maximum – RON minimum; measured at identical VCC, temperature, and voltage. 4. Flatness is defined as the difference betw een the maximum and minimum value of on resistance over the specified range of conditions. 5. Guaranteed by characterization, not production tested for VCC=1.65 – 1.95 V.
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation Symbo l Paramete r VCC (V) Conditions TA=+25ºC TA=-40 to +85°C Unit Figur e Min tON Turn-On Time(6) 4.50 to 5.50 B0 or B1=VCC, RL=50 Ω, CL=35 pF ns Figure 4 tOFF Turn-Off Time(6) 4.50 to 5.50 B0 or B1=VCC, RL=50 Ω, CL=35 pF ns Figure 4 tBBM Break- Before-Make Time(7) 4.50 to 5.50 B0 or B1=VCC/2, RL=50 Ω, CL=35 pF ns Figure 5 Q Charge Injection 5.50 CL=1.0 nF, VGEN=0 V, RGEN=0 Ω pC Figure 7 3.30 40 2.50 30 1.65 10 OIRR Off Isolation 1.8 to 5.0 f=1 MHz, RL=50 Ω -55 dB Figure 6 Xtalk Crosstalk 1.8 to 5.0 f=1 MHz, RL=50 Ω 55 dB Figure 6 BW -3 db Bandw idth 5.50 RL=50 Ω MHz Figure 9 3.30 60 2.50 55 1.65 50 THD Total Harmonic Distortion
1.80 RL=600 ,
VIN=0.5 VPP, f=20 Hz to 20 kHz .02 % Figure 10 5.00 .001 PSRR Pow er Supply Rejection Ratio 3.3 f=217 Hz on VCC at 500 mvpp -23 dB Figure Notes: 6. Guaranteed by characterization, not production tested for V CC=1.65 – 1.95 V. 7. Guaranteed by characterization, not production tested.
www.onsemi.com FSA839 — Low-Voltage, 0.8 SPDT Analog Switch with Power-Off Isolation Capacitance Symbo l Parameter VCC (V) Conditions TA=+25ºC Unit Min. Typ. Max. CIN Control Pin Input Capacitance 0 f=1 MHz 3.2 pF COFF B Port Off Capacitance 1.65 to 5.50 f=1 MHz 50 pF CON A Port On Capacitance 1.65 to 5.50 f=1 MHz 150 pF
A. NO JEDEC REGISTRATION APPLIES. B. DIMENSIONS ARE IN MILLIMETERS. BY THE SPHERICAL CROWNS OF THE BALLS. ±39 MICRONS (547-625 MICRONS). G. DRAWING FILENAME: UC006ACrev4.
0.005 C A B
Figure 12. 6-Ball, WLCSP 0.4 mm Pitch
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