FS9532 VBSEMI | Alldatasheet
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Technical content
P-Channel 100 V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Power Switch DC/DC Converters PRODUCT SUMMARY RDS(on) (Ω)I D (A) Q g (TVDS (V) yp.) - 100 - 23 11.70.120 at VGS = - 4.5 V - 20 S G D P-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS - 100 VVGate-Source Voltage GS ± 20 TC = 25 ° Continuous Drain Current (TJ = 150 °C) C ID - 23 TC = 70 ° A C - 16 IPulsed Drain Current DM - 70 IAvalanche Current AS - 18 Single Avalanche Energya EL = 0.1 mH AS 16.2 mJ TC = 25 ° Maximum Power Dissipationa C 52.1PD b W TA = 25 °Cc 2.5 TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 50 °C/WRthJunction-to-Case (Drain) JC 3.9 FS9532-VB www.VBsemi.com 0.100 at VGS = - 10 V G D S TO-220 FULLPAK g Top View FS9532-VB Datasheet
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Un it Static VDS = 0 V, IDVDrain-Source Breakdown Voltage DS = - 250 µA - 100 VVGS(tGate Threshold Voltage h) VDS = VGS, ID = - 250 µA - 2.- 1 5 IGate-Body Leakage GSS VDS = 0 V, VGS = ± 20 V ± 250 nA VDS = - 100 V, VGS = 0 IZero Gate Voltage Drain Current DSS V - 1 VDS = - 100 V, VGS = 0 V, TJ = 12 µA5 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta VDS ≤ - 10 V, VGS =ID(on) - 10 V - 15 A Drain-Source On-State Resistancea VGS = - 10 V, ID RDS(on) = - 3.6 A 0.100 ΩVGS = - 4.5 V, ID = - 3.4 A 0.120 Forward Transconductancea VDS = - 15 V, ID =gfs - 3.6 A 12 S Dynamicb CInput Capacitance iss VGS = 0 V, VDS = - 50 V, f = 1 MHz 1055 C pFOutput Capacitance oss 65 CrsReverse Transfer Capacitance s 41 Total Gate Chargec VDS = - 50 V, VGS = - 10 V, ID = - 3.6Qg A 23.2 34.8 nCVDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A 11.7 17.6 Gate-Source Chargec Qgs 3.5 Gate-Drain Chargec Qgd 4.8 RGate Resistance g f = 1 MHz 1.2 5.7 11.5 Ω Tur n-On Delay Timec td(on) 71 VDD = - 50 V, RL = 17.2 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω Rise Time ns c tr 12 18 Turn-Off Delay Timec td(off) 33 50 Fall Timec tf 91 8 Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb IContinuous Current S - 8.8 AIPulsed Current SM - 15 Forward Voltagea VSD IF = - 2.9 A, VGS = 0 V - 0.8 - 1.5 V tReverse Recovery Time rr 5 IF = - 2.9 A, dI/dt = 100 A/µs 0 75 ns IRM(Peak Reverse Recovery Current REC) - 4 - 6 A QReverse Recovery Charge rr 1498 7 nC FS9532-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics Transfer Characteristics Transconductance 012 34 VGS =1 0Vt h r u5V VGS =4 V I D - Drain VDS - Drain-to-Source Voltage (V) Current (A) VGS =3 V 0.0 0.4 0.8 1.2 1.6 2.0 012 34 TC = 25 °C TC =1 2 5 ° C TC = - 55 °C I D - Drain VGS - Gate-to-Source Voltage (V) Current (A) 0 3 6 9 12 15 g fs - ID - Drain Current (A) Transconductance (S) TC = 125 °C TC = - 55 °C On TC = 25 °C -Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.05 0.10 0.15 0.20 0.25 0 3 6 9 12 15 VGS =4 . 5V VGS =1 0V ID - R DS(on) - On-Resistance (Ω) Drain Current (A) 0.00 0.10 0.15 0.20 0.25 02 468 1 0 TJ = 25 °C TJ = 150 °C RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 VDS =8 0V ID =3 . 6A VDS =5 0V VDS =2 5V VGS - Gate Qg - Total Gate Charge (nC) -to-Source Voltage (V) FS9532-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 TJ = 25 °C TJ = 150 °C I S - Source Current VSD - Source-to-Drain Voltage (V) (A) Crss0 400 800 1200 1600 20 04 06 08 0 1 0 0 Ciss Coss C - Capacitance VDS - Drain-to-Source Voltage (V) (pF) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 ID =3 .6A VGS =4 .5V VGS =1 0V RDS(on) - On- TJ - Junction Temperature (°C) (Normalized) Resistance Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - T VGS(th) (V) emperature (°C) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) I D - Drain 50 75 100 125 150 TC - Case Temperature (°C) Current (A) FS9532-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Single Pulse Avalanche Current Capability vs. Time 100 IDAV Time (s) (A) TJ = 150 °C TJ = 25 °C 10-3 10-21010 10 10-1-4-6 -5 Safe Operating Area 100 0.1 1 10 100 0.01
0.1 TA = 25 °C
Limited by RDS(on)* 100 μs 1m s BVDSS Limited 10 ms 1s ,1 0s ,D C VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-210 10 0 11-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Ef Square Wave Pulse Duration (s) fective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 FS9532-VB www.VBsemi.com g
www.VBsemi.com TO-220 FULLPAK Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All di mensions include burrs and plating thickness. 5. No chipping or package damage. E b n L b b e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 g
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