FS8S0765RCB FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- Burst Mode Operation to Reduce the Power Consumption in the Standby Mode
- External pin for Synchronization and Soft Start
- Wide Operating Frequency Range up to 150kHz
- Low Start-up Current (Max:80uA)
- Low Operating Current (Max:15mA)
- Pulse by Pulse Current Limiting
- Over V oltage Protection (Auto Restart Mode)
- Over Load Protection (Auto Restart Mode)
- Abnormal Over Current Protection (Auto Restart Mode)
- Internal Thermal Shutdown (Auto Restart Mode)
- Under V oltage Lockout
- Internal High V oltage SenseFET Application
- Monitor SMPS
Description
FS8S0765RCB is a Fairchild Power Switch (FPS) that is specially designed for off-line SMPS of CRT monitor with minimal external components. This device is a current mode PWM controller combined with a high voltage power SenseFET in a single package. The PWM controller features integrated oscillator to be synchronized with the external sync signal, under voltage lockout, optimized gate driver and temperature compensated precise current sources for the loop compensation. This device also includes various fault protection circuits such as over voltage protection, over load protection, abnormal over current protection and over tem- perature protection. Compared with discrete MOSFET and PWM controller solution, FPS can reduce total cost, compo- nent count, size and weight simultaneously increasing effi- ciency, productivity and system reliability. This device is well suited for the cost effective monitor power supply. TO-220-5L Internal Block Diagram 9V/15V 3 1 Vref Internal Bias S Q Q R OSC Vcc Vref Idelay IFB VSD TSD Vovp Vcc Vocl S Q Q R R 2.5R UVLO Reset (Vcc<9V) Vcc Drain Soft start & Sync FB GND AOCP Gate driver Vcc good LEB PWM Vref Vref Burst Mode Detector Vfb<0.8V Vss>3V No sync Burst Mode Controller Sync Detector FS8S0765RCB Fairchild Power Switch(FPS)
Pin Number Pin Name Pin Function Description 1D r a i n High voltage power SenseFET drain connection. This pin is designed to drive the transformer directly. 2 GND This pin is the control ground and the SenseFET source. 3V c c This pin is the positive supply input. This pin provides internal operating current for both start-up and steady-state operation.
4 Feedback
This pin is internally connected to the inverting input of the PWM comparator. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 7.5V, the over load protection is activated resulting in shutdown of FPS.
5 Soft Start &
This pin is for soft start and synchronization to the external sync signal.
(Ta=25°C, unless otherwise specified) Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=14mH, starting Tj=25 °C 4. L=13uH, starting Tj=25 °C Parameter Symbol Value Unit Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (2) IDM 28 A DC Single Pulsed Avalanche Energy (3) EAS 370 mJ Single Pulsed Avalanche Current (4) IAS 17 A Continuous Drain Current (Tc = 25°C) I D 7A DC Continuous Drain Current (TC=100°C) I D 4.5 A DC Supply Voltage V CC 35 V Input Voltage Range VFB -0.3 to Vcc V VS_S -0.3 to 10 V Total Power Dissipation PD(Watt H/S) 145 W Derating 1.16 W/ °C Operating Junction Temperature T j +150 °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature Range T STG -55 to +150 °C
Electrical Characteristics (SenseFET part) (Ta=25°C unless otherwise specified) Note: (1) Pulse test : Pulse width ≤ 300µS, duty 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain Source Breakdown Voltage BV DSS VGS=0V, ID=250µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=650V, VGS=0V - - 200 µA VDS=520V VGS=0V, TC=125°C - - 300 µA Static Drain Source On Resistance (1) RDS(ON) VGS=10V, ID=3.5A - 1.4 1.6 Ω Forward Transconductance gfs V DS=40V, ID=3.5A - 8 - mho Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1415 - pFOutput Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 15 - Turn On Delay Time td(on) V DD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) -2 5- nSRise Time tr - 60 - Turn Off Delay Time td(off) - 115 - Fall Time tf - 65 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=6.5A, VDS=325V (MOSFET switching time is essentially independent of operating temperature) -4 0- nCGate-Source Charge Qgs - 7 - Gate-Drain (Miller) Charge Qgd - 12 -
Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed at the design, are not tested in mass production. 2. These parameters, although guaranteed, are tested in EDS(wafer test) process. Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC -1 8 2 0 2 2 k H z Voltage Stability F STABLE 12V ≤ Vcc ≤ 23V 0 1 3 % Temperature Stability (1) ∆FOSC -25°C ≤ Ta ≤ 85°C0 ±5± 1 0% Maximum Duty Cycle D MAX -9 2 9 5 9 8 % Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback Source Current I FBSO VFB=GND 0.7 0.9 1.1 mA Feedback Sink Current I FBSI VFB=4V,VCC=19V 2.4 3.0 3.6 mA Shutdown Feedback Voltage V SD Vfb ≥ 6.9V 6.9 7.5 8.1 V Shutdown Delay Current Idelay V FB=5V 1.6 2.0 2.4 µA PROTECTION SECTION Over Voltage Protection V OVP Vcc ≥ 27V 34 37 - V Over Current Latch Voltage (2) V OCL - 0.95 1.0 1.05 V Thermal Shutdown Temp.(1) T SD - 140 160 - °C SYNC & SOFTSTART SECTION Softstart Vortage V SS Vfb=2 4.7 5.0 5.3 V Softstart Current I SS Vss=0V 0.8 1.0 1.2 mA Sync High Threshold Voltage V SH Vcc=16V,Vfb=5V 6.7 7.2 7.9 V Sync Low Threshold Voltage V SL Vcc=16V,Vfb=5V 5.4 5.8 6.2 V
Electrical Characteristics(Continued) Note: 1. These parameters indicate inductor current. 2. These parameters are the current flowing in the control IC. Parameter Symbol Condition Min. Typ. Max. Unit BURST MODESECTION(DPMS MODE) Burst Mode High Threshold Voltage V BUH Vfb=0V 11.6 12 12.6 V Burst Mode Low Threshold Voltage V BUL Vfb=0V 10.6 11 11.6 V Burst Mode Enable FB Voltage V BUFB Vcc=10.5V 0.9 1.0 1.1 V Burst Mode Enable S_S Voltage V BUSS Vcc=10.5V,Vfb=0V 2.5 3.0 3.5 V Burst Mode Enable Delay Time T BUDT Vcc=10.5V,Vfb=0V - 0.5 - ms Burst Mode Frequency F BU Vcc=10.5V,Vfb=0V 32 40 48 kHz CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit(1) I OVER - 3.52 4.0 4.48 A Burst Mode Peak Current Limit I BU_PK - 0.45 0.6 0.75 A TOTAL DEVICE SECTION Start Up Current I START VCC=Vstart-0.1V - 40 80 uA Operating Supply Current (2) IOP Vfb=GND, VCC=16V -9 1 5 m AIOP(MIN) Vfb=GND, VCC=12V IOP(MAX) Vfb=GND, VCC=27V
Burst Mode Peak Current VS Temp. Figure 19. Burst Mode Peak Current vs. Temp.
- 1. 1. 1. Start up : To guarantee stable operation of the
Figure 1. Strat up with hysteresis
- Feedback Control : FS8S0765RCB employs primary side
Figure 2. Primary side control circuit
- Protection function : FS8S0765RCB has 4 self
Figure 3. Auto restart operation after protection
3.1 Abnormal Over Current Protection (AOCP) : When
after the abnormal over current condition is sensed. Figure 4. AOCP block
4 OSC
3.2 Over Load Protection (OLP) : When the load current
mary side regulation voltage decrease below the set voltage. Figure 5. The waveforms at the OLP and auto restart Figure 6. Over load protection
3.3 Over Voltage Protection (OVP) : In case of malfunc-
tion, an over voltage protection (OVP) circuit is employed.
3.4 Thermal Shutdown (TSD) : The SenseFET and the
160°C, the thermal shutdown is activated.
- Soft Start : Figure 7 shows the soft start circuit. During
Figure 7. The circuit for the soft start
- Synchronization : In order to reduce the effect of switch-
Typical application circuit 1. 80W Universal Input Power Supply For CRT Monitor 2. Transformer Schematic Diagram R203 0.7k C202 22uF/160V R202 C203 47uF/100V C205 1000uF/25V D102 C107 10nF/630V D202 50V C302 4.7nF R101 56K/2W C111 0.1uF D103 0.1uF D201 BD101 + C207 1000uF/25V Hsync_O + C208 1000uF/25V C204 47uF/100V Regulator ouput_5V C113 1uF RT101 1N4148 1 2 Off signal L202 IC101 FS8S0765RCB Vfb Vcc GND Drain S/S C112 47uF/16V D203 R105 560 C102 100nF R103 600K Micro controller Sync trans R106 100 C103 4.7nF Line Filter: LF101 -14V L205 C209 1000uF/16V C105 100nF L201 C301 4.7nF 14V C101 TNR D205 D204 + C106 220uF/400V 80V +C108 22uF/50V ZD101 6.2VZD DC5V KSC945 R102
3.3 L203
On --> normal mode: Off --> off mode C109 47nF C115 1nF C114 1nF 6.5V F101 FUSE D101 C201 22uF/160V C210 1000uF/16V R201 0.1K C104 4.7nF C206 1000uF/25V R104 2.2K C110 1uF/50V L204 2N3904 L m : 4 2 0 u H Np : 40T Nvcc : 12T Nvo1 : 10T Nvo2 : 22T Nvo3 : 6T Nvo4 : 5T Nvo5 : 3T Nreg : 3T
3.Winding Specification 4.Electrical Charateristics 5. Core & Bobbin Core : EER 3540 Bobbin : EER3540 Ae(mm2) : 107 No Pin (s → f) Wire Turns Winding Method Np1 4 → 10 . 3 φ × 1 40 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvo1 16 → 15 0.3 φ × 1 10 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nreg 7 → 80 . 2 φ × 1 3 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvo2 14 → 13 0.3 φ × 3 22 Center Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Np2 4 → 10 . 3 φ × 1 40 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvo3 12 → 90 . 3 φ × 2 6 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvo4 9 → 11 0.3 φ × 1 5 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvo5 10 → 90 . 3 φ × 2 3 Solenoid Winding Insulation: Polyester Tape t = 0.050mm, 2Layers Nvcc 6 → 80 . 2 φ × 1 12 Solenoid Winding Outer Insulation: Polyester Tape t = 0.050mm, 2Layers Pin Specification Remarks Inductance 1 - 4 420uH ± 10% 300kHz, 1V Leakage Inductance 1 - 4 5uH Max 2 nd all short
6.Demo Circuit Part List Part Value Note Part Value Note Fuse C201 22nF/160V Electorlytic Capacitor F101 3A/250V - C202 22nF/160V Electorlytic Capacitor NTC C203 47nF/100V Electorlytic Capacitor RT101 10D-9 - C204 47nF/100V Electorlytic Capacitor Resistor C205 1000nF/25V Electorlytic Capacitor R101 56K 2W C206 1000nF/25V Electorlytic Capacitor R102 3.3 1/4W C207 1000nF/25V Electorlytic Capacitor R103 600K 1W C208 1000nF/25V Electorlytic Capacitor R104 2.2K 1/4W C209 1000nF/25V Electorlytic Capacitor R105 0.56K 1/4W C210 1000nF/25V Electorlytic Capacitor R106 0.1K 1/4W C211 0.1uF/50V Ceramic Capacitor R201 0.1K 1/4W C301 4.7nF AC Filter Capacitor R202 4K 1/4W C302 4.7nF AC Filter Capacitor R203 0.7K 1/4W Sync trans 22mH Inductor L201 ~ L205 13uH Diode D101 UF4007 Capacitor D102 TVR10G C101 471D10 TNR D103 TVR10G C102 100nF Box Capacitor D201 UF4007 C103 4.7nF AC Filter Capacitor D202 UF5404 C104 4.7nF AC Filter Capacitor D203 UF5402 C105 100nF Box Capacitor D204 UF5402 C106 220uF/400V Electorlytic Capacitor D205 UF5401 C107 10nF/630V Caramic Capacitor C108 22uF/50V Electorlytic Capacitor BD101 KBL406 Bridge Diode C109 47nF/50V Caramic Capacitor Line Filter C110 1uF/50V Electorlytic Capacitor LF101 24mH C111 0.1uF/50V Caramic Capacitor IC C112 47uF/50V Electorlytic Capacitor IC101 FS8S0765RC (7A, 650V) C113 1uF/50v Electorlytic Capacitor IC201 KSC945 NPN Transistor C114 1nF/50V Caramic Capacitor C115 1nF/50V Caramic Capacitor
Package Dimensions (Continued) TO-220-5L(Forming)
Ordering Information
TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BVdss Rds(on)Max. FS8S0765RCBTU TO-220-5L 8S0765RCB 650V 1.6FS8S0765RCBYDTU TO-220-5L(Forming)
8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.