FS820R08A6P2B

FS820R08A6P2B INFINEON | Alldatasheet

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HybridPACK™DriveModule FS820R08A6P2B FinalDataSheet V3.1,2019-10-10 AutomotiveHighPower

HybridPACK™DriveModule V3.1,2019-10-10Final Data Sheet 1Features/Description HybridPACK™DrivemodulewithEDT2IGBTandDiode T T T VCES = 750 V IC = 820 A Typical Applications Description The HybridPACKTM Drive is a very compact six-pack module (750V/820A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new HybridPACKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure in the FS820R08A6P2B product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. Automotive Applications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial Agriculture Vehicles Electrical Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Crss Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features 4.2kV DC 1sec Insulation High Creepage and Clearance Distances Compact design High Power Density Direct Cooled PinFin Base Plate Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant UL 94 V0 module frame Product Name Ordering Code FS820R08A6P2B SP001499708

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

2 IGBT,Inverter

2.1 Maximum Rated Values

Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V Implemented collector current ICN 820 A Continuous DC collector current TF = 80°C, Tvj max = 175°C IC nom 4501) A Repetitive peak collector current tP = 1 ms ICRM 1640 A Total power dissipation TF = 75°C, Tvj max = 175°C Ptot 7141) W Gate-emitter peak voltage VGES +/-20 V 2.2 Characteristic Values min. typ. max. Collector-emitter saturation voltage IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 820 A, VGE = 15 V Tvj = 25°C IC = 820 A, VGE = 15 V Tvj = 175°C VCE sat 1.10 1.15 1.15 1.30 1.50 1.35 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Gate threshold voltage IC = 9.60 mA, VCE = VGE Tvj = 175°C VGEth 4.90 5.80 4,10

6.50 VTvj = 25°C

Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 4.40 µC Internal gate resistor RGint 0.7 ΩTvj = 25°C Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cies 80.0 nFTvj = 25°C Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Coes 1.00 nFTvj = 25°C Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cres 0.30 nFTvj = 25°C Collector-emitter cut-off current VCE = 750 V, VGE = 0 V VCE = 750 V, VGE = 0 V Tvj = 175°C ICES 5 1.0 mATvj = 25°C Gate-emitter leakage current VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C Turn-on delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω td on 0.28 0.29 0.30 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Rise time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω tr 0.07 0.08 0.08 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω td off 0.94 1.05 1.05 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Fall time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω tf 0.04 0.05 0.06 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-on energy loss per pulse IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 5500 A/µs di/dt (Tvj 150°C) = 5000 A/µs Eon 13.5 17.5 18.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off energy loss per pulse IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3100 V/µs dv/dt (Tvj 150°C) = 2500 V/µs Eoff 23.5 29.0 30.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C SC data VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt ISC 4800

3900 ATvj = 25°C

Tvj = 175°C tP ≤ 6 µs, tP ≤ 3 µs, Thermal resistance, junction to cooling fluid per IGBT; ΔV/Δt = 10 dm³/min, TF = 75°C RthJF 0.1202) 0.1402) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

3 Diode, Inverter

3.1 Maximum Rated Values

Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 820 A Continuous DC forward current IF 4501) A Repetitive peak forward current tP = 1 ms IFRM 1640 A I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C I²t 19000 16000 A²s A²s 3.2 Characteristic Values min. typ. max. Forward voltage IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 820 A, VGE = 0 V Tvj = 25°C IF = 820 A, VGE = 0 V Tvj = 175°C VF 1.45 1.30 1.25 1.70 1.60 1.65 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Peak reverse recovery current IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V IRM 250 350 370 A Tvj = 25°C Tvj = 150°C Tvj = 175°C Recovered charge IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Qr 20.0 40.0 45.0 µC Tvj = 25°C Tvj = 150°C Tvj = 175°C Reverse recovery energy IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Erec 7.00 13.0 15.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Thermal resistance, junction to cooling fluid per diode; ΔV/Δt = 10 dm³/min, TF = 75°C RthJF 0.1752) 0.2002) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 4 NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω ΔR/R -5 5 % Power dissipation TC = 25°C P25 20.0 mW B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specification according to the valid application note. 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

5 Module

Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = 0 Hz, t = 1 sec VISOL 4.2 kV Maximum RMS module terminal current TF = 75°C, TCt = 105°C ItRMS 500 A Material of module baseplate Cu+Ni1) Internal isolation basic insulation (class 1, IEC 61140) Al2O32) Creepage distance terminal to heatsink terminal to terminal dCreep 9.0 9.0 mm Clearance terminal to heatsink terminal to terminal dClear 4.5 4.5 mm Comperative tracking index CTI > 200 min. typ. max. Pressure drop in cooling circuit ΔV/Δt = 10.0 dm³/min; TF = 75°C Δp 643) mbar Maximum pressure in cooling circuit Tbaseplate < 40°C Tbaseplate > 40°C (relative pressure) p 2.5 2.0 bar Stray inductance module LsCE 8.0 nH Module lead resistance, terminals - chip TF = 25 °C, per switch RCC'+EE' 0.75 mΩ Storage temperature Tstg -40 125 °C Mounting torque for modul mounting Screw M4 baseplate to heatsink Screw EJOT Delta PCB to frame M 1.80 0.45 2.00 0.50 2.20 0.554) Nm Weight G 720 g 1) Ni plated Cu baseplate. 2) Improved Al2O3 ceramic. 3) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 4) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

6 Characteristics Diagrams

output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V VCE [V] IC [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Tvj = 25°C Tvj = 150°C Tvj = 175°C output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C VCE [V] IC [A] 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V VGE [V] IC [A] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Tvj = 25°C Tvj = 150°C Tvj = 175°C switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω , RGoff = 5.1 Ω , VCE = 400 V IC [A] E [mJ] 100 200 300 400 500 600 700 800 900 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V RG [Ω ] E [mJ] 100 120 140 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY ΔV/Δt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol t [s] ZthJF [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJF : IGBT ri[K/W]: τi[s]: 0,005 0,001 0,05 0,03 0,065 0,25 0,02 1,5 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω , Tvj = 175°C VCE [V] IC [A] 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 IC, Modul IC, Chip thermal impedance IGBT,Inverter RthJF = f (ΔV/Δt), cooler design according to AN-HPD-Assembly Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] RthJF [K/W] 0,134 0,136 0,138 0,140 0,142 0,144 0,146 0,148 0,150 0,152 RthJF: IGBT

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz VCE [V] C [nF] 100 200 300 400 500 0,1 100 Cies Coes Cres gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C QG [µC] VGE [V] QG maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C Tvj [°C] VCES [V] -50 -25 100 125 150 175 200 650 675 700 725 750 775 800 VCES forward characteristic of Diode, Inverter (typical) IF = f (VF) VF [V] IF [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Tvj = 25°C Tvj = 150°C Tvj = 175°C

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω , VCE = 400 V IF [A] E [mJ] 100 200 300 400 500 600 700 800 900 Erec, Tvj = 150°C Erec, Tvj = 175°C switching losses Diode, Inverter (typical) Erec = f (RG), IF = 450 A, VCE = 400 V RG [Ω ] E [mJ] Erec, Tvj = 150°C Erec, Tvj = 175°C transient thermal impedance Diode, Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY ΔV/Δt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol t [s] ZthJC [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJC : Diode ri[K/W]: τi[s]: 0,015 0,001 0,1 0,03 0,065 0,25 0,02 1,5 thermal impedance Diode, Inverter RthJF = f (ΔV/Δt), cooler design according to AN-HPD-ASSEMBLY Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] RthJF [K/W] 0,194 0,196 0,198 0,200 0,202 0,204 0,206 0,208 0,210 0,212 0,214 RthJF: Diode

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet NTC-Thermistor-temperature characteristic (typical) R = f (T) TC [°C] R[Ω ] 100 120 140 160 100 1000 10000 100000 Rtyp pressure drop in cooling circuit Δp = f (ΔV/Δt), cooler design according to AN-HPD-ASSEMBLY Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] Δp [mbar] 100 120 Δp: Modul

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

7 Circuit diagram

U V W T T T

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

8 Package outlines

Y X 5,7 25c0,4 26,25c0,4 13,3 27,33 41,3 60,3 74,67 88,3 107,3 122 127c0,4 128,25c0,4 87c0,4 90,75c0,4 98,25 104,25c0,4 5c0,4 9,75c0,4 16,25 22,25c0,4 8,5c0,3 4c0,3 U V W P3N3P2N2P1N1 C2 E2 G2 E1G1 C4 E4 G4 E3G3 C6 E6 G6 E5G5 7,6c0,4 22plane reference 7,6c0,4 10,1c0,4 26c0,3 15,5c0,5 6,5c0,5 A 4,5c0,15q q0,5 DE m q1,6 ABC 14c0,2 16c0,2 6x(N1-N3;P1-P3) 1c0,15 8,3 27,33 55,3 74,67 87( ) 102,3 122 F 5,5c0,1q q0,6 F G m q1,2 ADE G H 5,5c0,1q q0,6 H I m q1,2 ADE I 3x(U;V;W) 14c0,2 16c0,2 6x6x 1c0,15 6x8x B C 5,3c0,15o ~B 4,3c0,156,35c0,5 D E C 6 -0,2 Z ( 1,5 : 1 ) X-Y ( 1 : 1 ) Z Y X 12,2 23,25 8,05 27,35 34,8 55,05 74,65 81,8 102,05 125,25 6,2 10,25 23,25 21,95 23,35 27,35 36,75 40,8 68,95 70,35 74,65 83,75 87,8 115,95 117,35 125,25 C2 E2 G2 C4 E4 G4 E3G3 C1 C3 E1G1 C6 E6 G6 E5G5 WVU N1 P1 N2 P2 N3 P3 18,85 51,85 59,35 67,15 69,85 74,1 C2 E2G2 Pin position checked with pin gauge according to Application Note AN-HPD_ASSEMBLY q K J m q **ABC 24x 12,8c0,2 A q0,8 L M m q1,6 AB C M 9,3c0,2 dimensioned for EJOT Delta PT WN5451 30 x f 0,3 CZ J K origin axis generated by C2;E2;G2;C4;E4;G4;C6;E6;G6 B C 3,94 -0,5 0,4+ refers to local CZ 19,75( ) L Drawing: D00043903_09 edges general toler surface DIN ISO 13715 1. DIN 16742-TG4 DIN EN ISO 1302 2. DIN ISO 2768-mK All dimensions refer to module in delivery condition 6x common zones D1-D2 D2-D3 D3-D4 D8-D7 D7-D6 D6-D5 R S T D2 D3 D5D7D8Areas R,S or T

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

9 Label Codes

9.1 Module Code

Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 Example 71549142846550549911530

9.2 Packing Code

Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X S Q Digit 2 - 9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet

Revision History

Major changes since previous revision Reference Date Description V1.2 2016-01-14 Increased ICRM and minor revisions, based on FS660R08A6P2B revision 1.1 V2.0 2016-11-24 Preliminary datasheet 2.0 V3.0 2017-03-09 Final datasheet 3.0 V3.1 2019-10-10 Adjustment of package outlines. Correction of typing errors.

HybridPACK™ Drive Module V3.1, 2019-10-10Final Data Sheet Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG

81726 Munich, Germany

© 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update 2011-11-11

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