FS8205A FUXINSEMI | Alldatasheet
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www.fuxinsemi.com Page 1 Ver2.1 C i r c u i t d i a g r a m Marking Product Summary P a c k a g e V (BR)DSS R DS(on)MAX I D 20V 25mΩ@4.5V 32mΩ@2.5V Feature Advanced trench process technology High density cell design for ultra low on-resistan ce Application Battery protection Switching application SOT-23-6L 8205A G1 D1/D2 S1 D1/D2 N-Channel Enhancement Mode MOSFET
www.fuxinsemi.com Page 2 Ver2.1 Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current I D 6 A Pulsed Drain Current I DM 25 A Power Dissipation P D 1.5 W Junction Temperature T J Storage Temperature T STG -55 ~ +150 Electrical characteristics (T A =25 o C, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 20 V Zero gate voltage drain current I DSS V DS =20V,V GS = 0V 1 µA Gate-body leakage current I GSS V GS =±12V, V DS = 0V ±100 nA Gate threshold voltage V GS(th) V DS GS , I D =250µA 0.5 1.2 V Drain-source on-resistance R DS(on) V GS =4.5V, I D =6.0A 18 25 mΩ V GS =2.5V, I D =5.0A 23 32 Forward transconductance g FS V DS =5V, I D =7A 9 S Dynamic characteristics Input Capacitance C iss V DS =8V,V GS =0V,f =1MHz 800 pF Output Capacitance C oss 155 Reverse Transfer Capacitance C rss 125 Total Gate Charge Q g V DS =10V,V GS =4.5V,I D =4A nC Gate-Source Charge Q gs 2.3 Gate-Drain Charge Q gd 2.5 Turn-on delay time t d(on) V DD =10V,V GS =4V, I D =1A,,R GEN =10Ω nS Turn-on rise time t r Turn-off delay time t d(off) Turn-off fall time t f Source-Drain Diode characteristics Diode Forward voltage V DS V GS =0V, I S =4.0A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. N-Channel Enhancement Mode MOSFET -55 ~ +150
www.fuxinsemi.com Page 3 Ver2.1 TypicalCharacteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance N-Channel Enhancement Mode MOSFET
www.fuxinsemi.com Ver2.1 Page 4 N-Channel Enhancement Mode MOSFET Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 2.650 2.950 0.104 0.116 E1 1.500 1.700 0.059 0.067 e 0.950 (BSC) 0.037 (BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ