FS6S1565RB FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Wide operating frequency range up to 150Khz
  • Internal Burst mode Controller for Stand-by mode
  • Pulse by pulse over current limiting
  • Over current protection(Auto restart mode)
  • Over voltage protection (Auto restart mode)
  • Over load protection(Auto restart mode)
  • Internal thermal shutdown function(Auto restart mode)
  • Under voltage lockout
  • Internal high voltage sense FET
  • Eternal sync terminal/Soft start

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or R CC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. TO-3P-5L Internal Block Diagram S R Q S R Q S R Q TS D (Tj=160℃) Ifb 11113333 5555 4444 2222 Vref Rsenese 2.5R R Vref Internal Bias Vref UVLO Ron Roff PWM OCL Burst mode controller Filter (130nsec) UVLO Reset (Vcc=9V) OLP OVP Vth=7.5V Vcc Vth=30V Vth=1V Vfb Offset Idelay Vcc Vfb Vth=1V Vcc Vth=11V/12V OSC Vref Vpp=5.8/7.2V UVLO Reset (Vcc=9V) FS6S1565RB Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=8.5mH, starting Tj=25 °C 4. L=13uH, starting Tj=25 °C Parameter Symbol Value Unit Drain-source(GND) voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-source (GND) Voltage V GS ±30 V Drain current pulsed (2) IDM 60 A DC Single pulsed avalanche energy (3) EAS 1040 mJ Single Pulsed Avalanche current (4) IAS 37 A Continuous drain current (Tc = 25°C) I D 15 A DC Continuous drain current (TC=100°C) I D 9.5 A DC Supply voltage V CC 35 V Input Voltage Range VFB −0.3 to VCC V VS_S −0.3 to 10 V Total Power Dissipation PD(Watt H/S) 270 W Derating 2.17 W/ °C Operating junction temperature T j +160 °C Operating Ambient Temperature T A −25 to +85 °C Storage Temperature range T STG −55 to +150 °C

Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: Pulse test : Pulse width ≤ 300µS, duty 2% 1. L=13uH, starting Tj=25°C Parameter Symbol Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS VGS = 0V, ID = 250µA 650 - - V Zero gate voltage drain current I DSS VDS = 650V, VGS = 0V - - 200 µA VDS = 520V VGS = 0V, TC = 125°C - - 300 µA Static drain-source on resistance (note) RDS(ON) VGS = 10V, ID = 7.5A - 0.5 0.65 Ω Forward transconductance (note) gfs V DS = 50V, ID = 7.5A - - - S Input capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz - 2580 - pFOutput capacitance Coss - 270 - Reverse transfer capacitance Crss - 50 - Turn on delay time t d(on) VDD = 325V, ID = 15A (MOSFET switching time are essentially independent of operating temperature) -5 0- nS Rise time tr - 155 - Turn off delay time t d(off) - 270 - Fall time tf - 125 - Total gate charge (gate-source+gate-drain) Qg VGS = 10V, ID = 15A, VDS = 520V (MOSFET Switching time are Essentially independent of Operating temperature) -9 0- nCGate source charge Qgs - 15 - Gate drain (Miller) charge Qgd - 45 - Single Pulsed Avalanche current (1) IAS VCC = VFB = VSS = GND - 37 - A S 1 R----=

Electrical Characteristics

(Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start threshold voltage V START VFB = GND 14 15 16 V Stop threshold voltage V STOP VFB = G N D 8 91 0V SENSEFET SECTION Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta = 25°C 3500 - - V Drain to Source Breakdown voltage BVdss Vdrain = 650V, Ta = 25°C 650 - - V Drain to Source Leakage current Idss Vdrain = 650V, Ta = 25°C - - 300 uA OSCILLATOR SECTION Initial Frequency F OSC -2 2 2 5 2 8 k H z Voltage Stability F STABLE 12V ≤ Vcc ≤ 23V 0 1 3 % Temperature Stability (note4) ∆FOSC -25°C ≤ Ta ≤ 85°C0 ±5± 1 0 % Maximum duty cycle D MAX -9 2 9 5 9 8 % Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback source current I FB VFB = GND 0.7 0.9 1.1 mA Shutdown Feedback voltage V SD Vfb ≥ 6.9V 6.9 7.5 8.1 V Shutdown delay current Idelay V FB = 5V 1.6 2.0 2.4 µA PROTECTION SECTION Over Voltage Protection V OVP Vsync ≥ 11V 27 30 33 V Over Current Latch Voltage (Note2) V OCL -0 . 9 1 . 0 1 . 1 V Thermal Shutdown Temp.(Note4) T SD - 140 160 - °C

Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Notes: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. Parameter Symbol Condition Min. Typ. Max. Unit Sync & SOFTSTART SECTION Softstart Vortage V SS Vfb = 2 4.7 5.0 5.3 V Softstart Current I SS Vss = V 0.8 1.0 1.2 mA Sync High Threshold Voltage V SYNCH Vcc = 16V, Vfb = 5V - 7.2 - V Sync Low Threshold Voltage V SYNCL Vcc = 16V, Vfb = 5V - 5.8 - V BURST MODE SECTION Burst mode Low Threshold Voltage V BURL Vfb = 0V 10.4 11.0 11.6 V Burst mode High Threshold Voltage V BURH Vfb = 0V 11.4 12.0 12.6 V Burst mode Enable Feedback Voltage (Note4) V BEN Vcc = 10.5V 0.7 1.0 1.3 V Burst mode Peak Current Limit (Note3) I BU_PK Vcc = 10.5V 0.6 0.85 1.1 V Burst mode Frequency F BUR Vcc = 10.5V, Vfb = 0V 40 50 60 KHz CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note3) I OVER - 8.5 9.7 10.9 A TOTAL DEVICE SECTION Start Up current I START Vfb = GND, VCC = 14V - 0.1 0.17 mA Operating supply current (Note1) IOP Vfb = GND, VCC = 16V -1 0 1 5 m AIOP(MIN) Vfb = GND, VCC = 10V IOP(MAX) Vfb = GND, VCC = 28V

TO-3P-5L (Forming)

10/17/01 0.0m 001 Stock#DSxxxxxxxx  2001 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BVdss Rds(on) FS6S1565RB-TU TO-3P-5L 6S1565RB 650V 0.5 FS6S1565RB-YDTU TO-3P-5L(Forming)