FS6M07652

FS6M07652RTC FAIRCHILD | Alldatasheet

Document overview

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• PDF pages: 10

Technical content

Features

• Fixed Frequency
• Internal Burst Mode Controller for Stand-by Mode
• Pulse By Pulse Over Current Limiting
• Over Current Protection(Auto Restart Mode)
• Over V oltage Protection (Auto Restart Mode)
• Over Load Protection(Auto Restart Mode)
• Internal Thermal Shutdown Function(Latch Mode)
• Under V oltage Lockout
• Internal High V oltage Sense FET
• S o f t S t a r t Application
• LCD Monitor SMPS
• Adaptor

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller features integrated fixed oscillator, the under voltage lock out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and a fault protection circuitry. compared with a discrete MOSFET and a controller or a RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective LCD monitor power supply. TO-220F-5L 1. Drain 2. GND 3. VCC 4. Feedback 5. SoftStart Internal Block Diagram S R Q S R Q S R Q TSD (Tj=160℃) Ifb 11113333 5555 4444 2222 Vref Rsenese 2.5R R Vref Internal Bias Vref UVLO Ron Roff PWM OCL Burst mode controller Filter (130nsec) Power-on Reset (Vcc=6.5V) UVLO Reset (Vcc=9V) OLP OVP Vth=7.5V Vcc Vth=33V Vth=2V Vfb Offset Idelay Vcc Vfb Vth=1V Vcc Vth=11V/12V OSC Vref DrainVCC GND SoftStart Feedbock FS6M07652RTC Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=81mH, starting Tj=25°C 3. L=13uH, starting Tj=25°C Characteristic Symbol Value Unit Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 14.4 A DC Continuous Drain Current (Tc = 25°C) I D 3.6 A DC Continuous Drain Current (TC=100°C) I D 2.28 A DC Single Pulsed Avalanche Current(3)(Energy (2))I AS(EAS) 17(570) A(mJ) Maximum Supply Voltage V CC, MAX 35 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 10 V Total Power Dissipation PD(Watt H/S) 46 W Darting 0.37 W/ °C Operating Junction Temperature T j +150 °C Operating Ambient Temperature T A -25 to +85 °C Storage Temperature Range T STG -55 to +150 °C

Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test : Pulse width ≤ 300µS, duty 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=250µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=650V, VGS=0V - - 200 µA VDS=520V VGS=0V, TC=125°C - - 300 µA Static Drain-Source On Resistance (1) RDS(ON) VGS=10V, ID=1.8A - 1.3 1.6 Ω Forward Transconductance (2) gfs V DS=50V, ID=1.8A - 3.3 - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1200 - pFOutput Capacitance Coss - 125 - Reverse Transfer Capacitance Crss - 23 - Turn On Delay Time td(on) V DD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) -2 2- nSRise Time tr - 70 - Turn Off Delay Time td(off) - 105 - Fall Time tf - 65 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=6.5A, VDS=520V (MOSFET switching time is essentially independent of operating temperature) -4 0- nCGate-Source Charge Qgs - 6.5 - Gate-Drain (Miller) Charge Qgd - 18 - S 1 R----=

Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Notes: 1. These parameters are the current flowing in the control IC. 2. These parameters, although guaranteed at the design, are not 100% tested in production. 3. These parameters, although guaranteed, are tested in EDS(wafer test) process. 4. These parameters indicate inductor current. Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB = G N D 1 41 51 6 V Stop Threshold Voltage V STOP VFB = GND 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC - 6 37 07 7 k H z Voltage Stability F STABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (2) ∆FOSC -25°C ≤ Ta ≤ 85°C0 ±5± 1 0% Maximum Duty Cycle D MAX - 7 58 08 5% Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback Source Current I FB VFB = GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD VFB ≥ 6.9V 6.9 7.5 8.1 V Shutdown Delay Current I DELAY VFB = 5V 3.2 4.0 4.8 µA SOFTSTART SECTION Softstart Voltage V SS VFB = 2 4.7 5.0 5.3 V Softstart Current I SS VSS = V 0.8 1.0 1.2 mA BURST MODE SECTION Burst Mode Low Threshold Voltage V BURL VFB = 0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage V BURH VFB = 0V 11.4 12.0 12.6 V Burst Mode Enable Feedback Voltage V BEN VCC = 10.5V 0.7 1.0 1.3 V Burst Mode Peak Current Limit (4) I BURPK VCC = 10.5V, VFB = 0V 0.38 0.5 0.62 A Burst Mode Frequency F BUR VCC = 10.5V, VFB = 0V 63 70 77 kHz CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (4) I OVER - 1.76 2.0 2.24 A PROTECTION SECTION Over Voltage Protection V OVP VCC ≥ 29V 29 33 37 V Over Current Latch Voltage (3) V OCL - 1.8 2.0 2.2 V Thermal Shutdown Temp (2) T SD - 140 160 - °C TOTAL DEVICE SECTION Start Up Current I START VFB = GND, VCC = 14V - 0.1 0.17 mA Operating Supply Current (1) IOP VFB = GND, VCC = 16V -1 0 1 5 m AIOP(MIN) VFB = GND, VCC = 12V IOP(MAX) VFB = GND, VCC = 30V

Package Dimensions (Continued) TO-220F-5L(Forming)

8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type YDT : Forming Type Product Number Package Marking Code BVdss Rds(on) FS6M07652RTCTU TO-220F-5L 6M07652R C 650V 1.6FS6M07652RTCYDT TO-220F-5L(Forming)