FS660R08A6P2FB INFINEON | Alldatasheet
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HybridPACK™DriveModule FS660R08A6P2FB FinalDataSheet V3.0,2019-05-20 AutomotiveHighPower
HybridPACK™DriveModule V3.0,2019-05-20Final Data Sheet 1Features/Description HybridPACK™DrivemodulewithEDT2IGBTandDiode T T T VCES = 750 V IC = 660 A Typical Applications Description The HybridPACKTM Drive is a very compact six-pack module optimized for hybrid and electric vehicles. The product FS660R08A6P2FB comes with a flat baseplate and is a 750V/660A module derivate within the HybridPACK Drive family. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new The HybridPACKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The two products in the The HybridPACKTM Drive family with flat baseplate in the FS660R08A6P2FB and PinFin baseplate in the FS820R08A6P2B allow a very cost effective scaling for different inverter power levels at a minimum inverter design effort. Automotive Applications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial Agriculture Vehicles Electrical Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Crss Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features 4.2kV DC 1sec Insulation High Creepage and Clearance Distances Compact design High Power Density Copper Base Plate Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant UL 94 V0 module frame Product Name Ordering Code FS660R08A6P2FB SP001632426
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
2 IGBT,Inverter
2.1 Maximum Rated Values
Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V Implemented collector current ICN 660 A Continuous DC collector current TC = 80°C, Tvj max = 175°C IC nom 4501) A Repetitive peak collector current tP = 1 ms ICRM 1320 A Total power dissipation TC = 75°C, Tvj max = 175°C Ptot 10531) W Gate-emitter peak voltage VGES +/-20 V 2.2 Characteristic Values min. typ. max. Collector-emitter saturation voltage IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 660 A, VGE = 15 V Tvj = 25°C IC = 660 A, VGE = 15 V Tvj = 175°C VCE sat 1.10 1.15 1.15 1.25 1.35 1.35 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Gate threshold voltage IC = 9.60 mA, VCE = VGE Tvj = 175°C VGEth 4.90 5.80 4,10
6.50 VTvj = 25°C
Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 4.40 µC Internal gate resistor RGint 0.7 ΩTvj = 25°C Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cies 80.0 nFTvj = 25°C Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Coes 1.00 nFTvj = 25°C Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cres 0.30 nFTvj = 25°C Collector-emitter cut-off current VCE = 750 V, VGE = 0 V VCE = 750 V, VGE = 0 V Tvj = 175°C ICES 5 1.0 mATvj = 25°C Gate-emitter leakage current VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C Turn-on delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω td on 0.28 0.29 0.30 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Rise time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω tr 0.07 0.08 0.08 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω td off 0.94 1.05 1.05 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Fall time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω tf 0.04 0.05 0.06 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-on energy loss per pulse IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 5500 A/µs di/dt (Tvj 150°C) = 5000 A/µs Eon 13.5 17.5 18.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off energy loss per pulse IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3100 V/µs dv/dt (Tvj 150°C) = 2500 V/µs Eoff 23.5 29.0 30.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C SC data VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt ISC 4800
3900 ATvj = 25°C
Tvj = 175°C tP ≤ 6 µs, tP ≤ 3 µs, Thermal resistance, junction to case per IGBT RthJC 0.080 0.095 K/W Thermal resistance, case to heatsink per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) RthCH 0.0502) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 1) Verified by characterization / design not by test. 2) cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
3 Diode, Inverter
3.1 Maximum Rated Values
Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 660 A Continuous DC forward current IF 4501) A Repetitive peak forward current tP = 1 ms IFRM 1320 A I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C I²t 19000 16000 A²s A²s 3.2 Characteristic Values min. typ. max. Forward voltage IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 660 A, VGE = 0 V Tvj = 25°C IF = 660 A, VGE = 0 V Tvj = 175°C VF 1.45 1.30 1.25 1.60 1.45 1.65 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Peak reverse recovery current IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V IRM 250 350 370 A Tvj = 25°C Tvj = 150°C Tvj = 175°C Recovered charge IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Qr 20.0 40.0 45.0 µC Tvj = 25°C Tvj = 150°C Tvj = 175°C Reverse recovery energy IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Erec 7.00 13.0 15.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Thermal resistance, junction to case per diode RthJC 0.125 0.150 K/W Thermal resistance, case to heatsink per diode λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) RthCH 0.0502) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 4 NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω ΔR/R 5 5 % Power dissipation TC = 25°C P25 20.0 mW B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specification according to the valid application note. 1) Verified by characterization / design not by test. 2) cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
5 Module
Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = 0 Hz, t = 1 sec VISOL 4.2 kV Maximum RMS module terminal current TF = 75°C, TCt = 105°C TC = 85°C, TCt = 105°C ItRMS 500 500 A Material of module baseplate Cu+Ni1) Internal isolation basic insulation (class 1, IEC 61140) Al2O32) Creepage distance terminal to heatsink terminal to terminal dCreep 9.0 9.0 mm Clearance terminal to heatsink terminal to terminal dClear 4.5 4.5 mm Comperative tracking index CTI > 200 min. typ. max. Maximum pressure in cooling circuit Tbaseplate < 40°C Tbaseplate > 40°C (relative pressure) p 3.03) 2.5 bar Stray inductance module LsCE 8.0 nH Module lead resistance, terminals - chip TC = 25 °C, per switch RCC'+EE' 0.75 mΩ Storage temperature Tstg -40 125 °C Mounting torque for modul mounting Screw M4 baseplate to heatsink Screw EJOT Delta PCB to frame M 1.80 0.45 2.00 0.50 2.20 0.554) Nm Weight G 600 g 1) Ni plated Cu baseplate. 2) Improved Al2O3 ceramic. 3) According to application note AN-HPD-ASSEMBLY 4) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
6 Characteristics Diagrams
output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V VCE [V] IC [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C VCE [V] IC [A] 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V VGE [V] IC [A] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω , RGoff = 5.1 Ω , VCE = 400 V IC [A] E [mJ] 100 200 300 400 500 600 700 800 900 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V RG [Ω ] E [mJ] 100 120 140 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C transient thermal impedance IGBT,Inverter ZthJC = f (t) thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K) t [s] ZthJC [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJC : IGBT ri[K/W]: τi[s]: 0,005 0,001 0,055 0,03 0,022 0,25 0,013 1,5 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω , Tvj = 175°C VCE [V] IC [A] 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 IC, Modul IC, Chip capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz VCE [V] C [nF] 100 200 300 400 500 0,1 100 Cies Coes Cres
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C QG [µC] VGE [V] QG maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C Tvj [°C] VCES [V] -50 -25 100 125 150 175 200 650 675 700 725 750 775 800 VCES forward characteristic of Diode, Inverter (typical) IF = f (VF) VF [V] IF [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω , VCE = 400 V IF [A] E [mJ] 100 200 300 400 500 600 700 800 900 Erec, Tvj = 150°C Erec, Tvj = 175°C
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet switching losses Diode, Inverter (typical) Erec = f (RG), IF = 450 A, VCE = 400 V RG [Ω ] E [mJ] Erec, Tvj = 150°C Erec, Tvj = 175°C transient thermal impedance Diode, Inverter ZthJC = f (t) thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K) t [s] ZthJC [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJC : Diode ri[K/W]: τi[s]: 0,015 0,001 0,1 0,03 0,025 0,25 0,01 1,5 NTC-Thermistor-temperature characteristic (typical) R = f (T) TC [°C] R[Ω ] 100 120 140 160 100 1000 10000 100000 Rtyp
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
7 Circuit diagram
U V W T T T
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
8 Package outlines
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
9 Label Codes
9.1 Module Code
Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 Example 71549142846550549911530
9.2 Packing Code
Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X S Q Digit 2 - 9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet
Revision History
Major changes since previous revision Reference Date Description V1.0 2017-05-08 Target datasheet V2.0 2018-03-07 - V3.0 2019-05-20 -
HybridPACK™ Drive Module V3.0, 2019-05-20Final Data Sheet Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG
81726 Munich, Germany
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