FS650R08A4P2

FS650R08A4P2 INFINEON | Alldatasheet

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HybridPACK™DC6Module FS650R08A4P2 DC6ivariant FinalDataSheet V3.0,2020-05-06 AutomotiveHighPower

HybridPACK™DC6Module V3.0,2020-05-06Final Data Sheet 1Features/Description HybridPACK™DC6imodulewithEDT2IGBTandDiode P1 P2 P3 C1 C3 C5 T T T VCES = 750 V IC = 650 A Typical Applications Description The HybridPACKTM DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new HybridPACKTM DC6i power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with ribbon bonds structure in the FS650R08A4P2 product shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. Automotive Applications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial Agriculture Vehicles Optimized for automotive applications with DC link voltages up to 470 V Electrical Features Blocking voltage 750V Low VCEsat Low Switching Losses Low Qg and Crss Low Inductive Design Tvj op = 150°C Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features 2.5kV AC 1min Insulation High Creepage and Clearance Distances Compact design High Power Density Direct Cooled Base Plate with Ribbon Bonds Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant Product Name Ordering Code FS650R08A4P2 SP001714512

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

2 IGBT,Inverter

2.1 Maximum Rated Values

Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V Implemented collector current ICN 650 A Continuous DC collector current TF = 65°C, Tvj max = 175°C IC nom 3751) A Repetitive peak collector current tP = 1 ms ICRM 1300 A Total power dissipation TF = 75°C, Tvj max = 175°C Ptot 4881) W Gate-emitter peak voltage VGES +/-20 V 2.2 Characteristic Values min. typ. max. Collector-emitter saturation voltage IC = 375 A, VGE = 15 V IC = 375 A, VGE = 15 V IC = 375 A, VGE = 15 V IC = 650 A, VGE = 15 V Tvj = 25°C IC = 650 A, VGE = 15 V Tvj = 175°C VCE sat 1.10 1.15 1.15 1.30 1.45 1.35 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Gate threshold voltage IC = 11.5 mA, VCE = VGE Tvj = 175°C VGEth 4.90 5.80 4,10

6.50 VTvj = 25°C

Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 3.55 µC Internal gate resistor RGint 1.0 ΩTvj = 25°C Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cies 65.0 nFTvj = 25°C Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Coes 0.83 nFTvj = 25°C Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cres 0.25 nFTvj = 25°C Collector-emitter cut-off current VCE = 750 V, VGE = 0 V ICES 1.0 mATvj = 25°C Gate-emitter leakage current VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C Turn-on delay time, inductive load IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω td on 0.30 0.32 0.33 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Rise time, inductive load IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω tr 0.07 0.08 0.08 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off delay time, inductive load IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω td off 0.80 0.88 0.92 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Fall time, inductive load IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω tf 0.06 0.07 0.08 µs Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-on energy loss per pulse IC = 375 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 7000 A/µs di/dt (Tvj 175°C) = 4000 A/µs Eon 8.00 11.5 13.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Turn-off energy loss per pulse IC = 375 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3800 V/µs dv/dt (Tvj 175°C) = 3300 V/µs Eoff 18.0 23.5 24.5 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C SC data VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt ISC 3900

3200 ATvj = 25°C

Tvj = 175°C tP ≤ 6 µs, tP ≤ 3 µs, Thermal resistance, junction to cooling fluid per IGBT; ΔV/Δt = 10 dm³/min, TF = 75°C RthJF 0.1702) 0.2052) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

3 Diode, Inverter

3.1 Maximum Rated Values

Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 650 A Continuous DC forward current IF 3751) A Repetitive peak forward current tP = 1 ms IFRM 1300 A I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C I²t 16500 14000 A²s A²s 3.2 Characteristic Values min. typ. max. Forward voltage IF = 375 A, VGE = 0 V IF = 375 A, VGE = 0 V IF = 375 A, VGE = 0 V IF = 650 A, VGE = 0 V Tvj = 25°C IF = 650 A, VGE = 0 V Tvj = 175°C VF 1.45 1.35 1.30 1.70 1.60 1.65 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Peak reverse recovery current IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V IRM 205 320 345 A Tvj = 25°C Tvj = 150°C Tvj = 175°C Recovered charge IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Qr 24.5 47.5 56.0 µC Tvj = 25°C Tvj = 150°C Tvj = 175°C Reverse recovery energy IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Erec 8.60 16.0 19.0 mJ Tvj = 25°C Tvj = 150°C Tvj = 175°C Thermal resistance, junction to cooling fluid per diode; ΔV/Δt = 10 dm³/min, TF = 75°C RthJF 0.2302) 0.2752) K/W Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op -40 150 1503) 175 4 NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω ΔR/R -5 5 % Power dissipation TC = 25°C P25 20.0 mW B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specification according to the valid application note. 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

5 Module

Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = 50 Hz, t = 1 min VISOL 2.5 kV Material of module baseplate Cu/Ni/Al1) Internal isolation basic insulation (class 1, IEC 61140) Al2O32) Creepage distance terminal to heatsink terminal to terminal dCreep 18.2 8.2 mm Clearance terminal to heatsink terminal to terminal dClear 18.2 5.9 mm Comperative tracking index CTI > 200 min. typ. max. Pressure drop in cooling circuit ΔV/Δt = 10.0 dm³/min; TF = 75°C Δp 903) mbar Maximum pressure in cooling circuit Tbaseplate < 40°C Tbaseplate ≥ 40°C (relative pressure) p 2.5 2.0 bar Stray inductance module LsCE 15 nH Storage temperature Tstg -40 125 °C Mounting torque for modul mounting Screw M5 baseplate to heatsink M 3.00 6.00 Nm Terminal connection torque Screw M5 M 3.0 - 6.0 Nm Weight G 490 g 1) Ni plated Cu baseplate with Al ribbon bonds. 2) Improved Al2O3 ceramic. 3) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol.

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

6 Characteristics Diagrams

output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V VCE [V] IC [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C VCE [V] IC [A] 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V VGE [V] IC [A] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω , RGoff = 5.1 Ω , VCE = 400 V IC [A] E [mJ] 100 200 300 400 500 600 700 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V RG [Ω ] E [mJ] Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPDC6i ΔV/Δt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol t [s] ZthJF [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJF : IGBT ri[K/W]: τi[s]: 0,01 0,001 0,07 0,03 0,08 0,25 0,045 1,5 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω , Tvj = 175°C VCE [V] IC [A] 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 IC, Modul IC, Chip thermal impedance IGBT,Inverter RthJF = f (ΔV/Δt), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] RthJF [K/W] 0,195 0,200 0,205 0,210 0,215 0,220 0,225 RthJF: IGBT

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz VCE [V] C [nF] 100 200 300 400 500 0,1 100 Cies Coes Cres gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C QG [µC] VGE [V] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 QG maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C Tvj [°C] VCES [V] -50 -25 100 125 150 175 200 650 675 700 725 750 775 800 VCES voltage slope IGBT,Inverter (typical) dv/dt = f (RG) VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj = 150°C RG [Ω ] dv/dt [kV/µs] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 dv/dtoff: IGBT dv/dton: IGBT

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet current slope IGBT,Inverter (typical) di/dt = f (RG), VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj= 150°C RG [Ω ] di/dt [kA/µs] di/dtoff: IGBT di/dton: IGBT forward characteristic of Diode, Inverter (typical) IF = f (VF) VF [V] IF [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω , VCE = 400 V IF [A] E [mJ] 100 200 300 400 500 600 700 Erec, Tvj = 150°C Erec, Tvj = 175°C switching losses Diode, Inverter (typical) Erec = f (RG), IF = 375 A, VCE = 400 V RG [Ω ] E [mJ] Erec, Tvj = 150°C Erec, Tvj = 175°C

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet transient thermal impedance Diode, Inverter ZthJF = f(t), cooler design according to AN-HPDC6i ΔV/Δt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol t [s] ZthJF [K/W] 0,001 0,01 0,1 0,001 0,01 0,1 ZthJF : Diode ri[K/W]: τi[s]: 0,017 0,001 0,12 0,03 0,1 0,25 0,038 1,5 safe operation area Diode, Inverter (SOA) IR = f(VR) Tvj = 150°C VR [V] IR [A] 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 IR, RGon = 0.50 Ω IR, RGon = 0.75 Ω IR, RGon = 1.00 Ω thermal impedance Diode, Inverter RthJF = f(ΔV/Δt), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] RthJF [K/W] 0,265 0,270 0,275 0,280 0,285 0,290 0,295 RthJF: Diode NTC-Thermistor-temperature characteristic (typical) R = f (T) TC [°C] R[Ω ] 100 120 140 160 100 1000 10000 100000 Rtyp

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet pressure drop in cooling circuit Δp = f (ΔV/Δt), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol ΔV/Δt [dm³/min] Δp [mbar] 100 120 140 160 Δp: Modul

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

7 Circuit diagram

H_P_DC6i P1 P2 P3 C1 C3 C5 U V W T T T P1 P2 P3

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

8 Package outlines

D-D ( 1 : 1 ) A ( 2 : 1 ) B ( 2 : 1 ) C ( 5 : 1 ) D D A B C UVW N3 N2 P1P3 P2 for Ejot PT30x10 20,5 23,57( ) 77,5 5,5-0,15 0,05 P 6,6B0,1P L P1,0ABC C 9,8 min. 2,4 B 0,1 P L P1,0ABC 3,05 max. loop height 102,4 max. Reserved area 17,05B 0,5 (9x) 22,35B 0,5 A 140B0,4 (4) (2) 5,85 6,55 6,9 21,75 29,05 36,8 43,5 47,6 62,85 63,55 0 7,1 23,65 25,5 27,35 44,8 62,15 64 65,85 83,2 100,65 102,5 104,35 120,9 14B0,3 43B0,3 0 1,5B 0,5 126,5B 0,5 0 11 17 32 53 56( 64 75 96 111 117 128 48,4 max. Reserved area (15) 12,85B0,2 (4x) (Control board height) L ABC 21x L P0,2ABC B Sprue area, max. height 0,6mm 4,9B 0,15 P 5,4 B 0,15 P P6,2 10,5 min. All dimensions are measured in the delivered state. Pin positions checked with pin gauge according to Application Note 112,6B 0,4

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

9 Label Codes

9.1 Module Code

Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 Example 71549142846550549911530

9.2 Packing Code

Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X S Q Digit 2 - 9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet

Revision History

Major changes since previous revision Reference Date Description V1.0 2017-08-31 Target datasheet V1.1 2018-01-18 Change of package designation V1.2 2018-06-25 Extention of target data (E, Rth, ...) V1.3 2019-02-12 New package outlines / pinning V2.0 2019-10-30 Preliminary datasheet V3.0 2020-05-06 Final datasheet

HybridPACK™ DC6 Module V3.0, 2020-05-06Final Data Sheet Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG

81726 Munich, Germany

© 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update 2011-11-11

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