FS4UM-12

FS4UM-12 RENESAS | Alldatasheet

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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers

Feb.1999 600 ±30 –55 ~ +150 –55 ~ +150 2.0 V V A A W g FS4UM-12 VDSS VGSS ID IDM PD Tch Tstg 10.5MAX. 4.5 1.3 φ 3.6 3.2 1612.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 4.5MAX. 0.5 2.6 7.0 qwe q GATE w DRAIN e SOURCE r DRAIN r wr q e OUTLINE DRAWING Dimensions in mm VGS = 0V VDS = 0V Typical value Symbol Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight TO-220 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 600 ±30 1.8 2.0 4.0 3.0 600 1.5 ±10 2.6 5.2 2.0 1.39 ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V , ID = 2A, VGS = 10V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case 100 0 200 150 100 50 0 101 100 10–1 23 57 1 0 1 23 57 1 0 2 23 57 1 0 3 TC = 25°C Single Pulse tw=10µs 100µs 1ms 10ms DC 00 4 8 12 16 20 TC = 25°C Pulse Test VGS = 20V 10V 00 1 02 03 04 05 0 PD = 90W TC = 25°C Pulse Test VGS = 20V 10V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE 23 571 0 2 102 101 23 571 0 123 571 0 0 23 103 Ciss Tch = 25°C f = 1MHz V GS = 0V Coss Crss 23 5 7 1 0 0 103 102 23 5 7 1 0 110–1 101 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ωtf td(off) tr td(on) 00 4 8 12 16 20 ID = 8A TC = 25°C Pulse Test 00 4 8 12 16 20 TC = 25°C VDS = 50V Pulse Test 101 10–1 10–1 23 5 7 1 0 0 100 23 5 7 1 0 1 TC = 25°C VDS = 10V Pulse Test 125°C 75°C 2310–1 57 1 00 23 57 1 0 1 23 57 1 0 2 TC = 25°C Pulse Test VGS = 10V 20V ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4UM-12 HIGH-SPEED SWITCHING USE 5.0 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 VDS = 10V ID = 1mA 1.4 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 VGS = 0V ID = 1mA 00 8 16 24 32 40 VDS = 100V 400V 200V Tch = 25°C ID = 4A 100 10–1 –50 101 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 10–4 101 100 10–1 23 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–110–2 PDM tw D= T tw T D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V BR (DSS) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V BR (DSS) (25°C) TC=125°C 25°C 75°C VGS = 0V Pulse Test