FS300R12KF4 EUPEC | Alldatasheet

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VWK, May 1996 Marketing Information FS 300 R 12 KF4 + + + Cu Gu Eu Cx Gx Ex Cv Gv Ev Cy Gy Ey Cw Gw Ew Cz Gz Ez U V W - -- external connection to be done external connection to be done 26,4 5,5 2,8x0,5 3x5=15 3,35 CX CU CY CV U V W GX EX EU GU GY EY EV GV GZ EZ EW GW 4 deep CZ CW 61,5 190 171 61,5 31,5 European Power- Semiconductor and Electronics Company GmbH + Co. KG

eupec GmbH + Co KG, Max-Planck-Str. 5, D59581 Warstein, Telefon +49 (0)2902/ 764-0, Telefax /764-256 IGBT-Module FS 300 R 12 KF4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom DC-collector current IC 300 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms ICRM 600 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 2000 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE +/- 20 V Dauergleichstrom DC forward current IF 300 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 600 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=300A, vGE=15V, tvj=25°C vCE sat - 2,7 3,2 V iC=300A, vGE=15V, tvj=125°C - 3,3 3,9 V Gate-Schwellenspannung gate threshold voltage iC=12mA, vCE=vGE, tvj=25°C vGE(th) 4,5 5,5 6,5 V Eingangskapazität input capacity fO=1MHz,tvj=25°C,vCE=25V,vGE=0V Cies - 22 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1200V, vGE=0V, tvj=25°C iCES - - 5 mA vCE=1200V, vGE=0V, tvj=125°C - - 50 mA Gate-Emitter Reststrom gate leakage current vCE=0V, vGE=20V, tvj=25°C iGES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, tvj=25°C iEGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=300A,vCE=600V ton vL= ±15V,RG=6,8Ω, tvj=25°C - 0,35 - µs vL= ±15V,RG=6,8Ω, tvj=125°C - 0,45 - µs Speicherzeit (induktive Last) storage time (inductive load) iC=300A,vCE=600V ts vL= ±15V,RG=6,8Ω, tvj=25°C - 0,9 - µs vL= ±15V,RG=6,8Ω, tvj=125°C - 1,0 - µs Fallzeit (induktive Last) fall time (inductive load) iC=300A,vCE=600V tf vL= ±15V,RG=6,8Ω, tvj=25°C - 0,10 - µs vL= ±15V,RG=6,8Ω, tvj=125°C - 0,15 - µs Charakteristische Werte / Characteristic values: Invers-Diode Durchlaßspannung forward voltage iF=300A, vGE=0V, tvj=25°C VF - 2,3 2,9 V iF=300A, vGE=0V, tvj=125°C - 2,1 - V Rückstromspitze peak reverse recovery current iF=300A, -diF/dt=300A/µs IRM vRM=600V, vEG=10V, tvj=25°C - 25 - A vRM=600V, vEG=10V, tvj=125°C - 65 - A Sperrverzögerungsladung recovered charge iF=300A, -diF/dt=300A/µs Qr vRM=600V, vEG=10V, tvj=25°C - 4 - µAs vRM=600V, vEG=10V, tvj=125°C - 20 - µAs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor,DC,pro Modul/per module RthJC 0,011 °C/W Transistor,DC,pro Zweig/per arm 0,064 °C/W Diode,DC, pro Modul/per module 0,023 °C/W Diode,DC, pro Zweig/per arm 0,140 °C/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module RthCK typ. 0,006 °C/W pro Zweig / per arm typ. 0,036 °C/W Höchstzul. Sperrschichttemperatur max. junction temperature tvj max 150 °C Betriebstemperatur operating temperature Transistor / transistor tc op -40...+150 °C Diode / diode tc op -40...+125 °C Lagertemperatur storage temperature tstg -40...+125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Anzugsdrehmoment f. mech. Befestigung mounting torque M1 3 Nm Gewicht weight G ca. 2300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.

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