FS200R12N3T7 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 16

Technical content

Features

  • Electrical features - V CES = 1200 V - I C nom = 200 A / ICRM = 400 A - Low V CE,sat - Overload operation up to 175°C - TRENCHSTOP TM IGBT7
  • Mechanical features - Integrated NTC temperature sensor - High power and thermal cycling capability - Solder contact technology - Al 2O3 substrate with low thermal resistance - Copper base plate Potential applications
  • Motor drives
  • Auxiliary inverters
  • Servo drives Product validation
  • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

J FS200R12N3T7 EconoPACK™3 module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2022-03-02

EconoPACK™3 module Table of contents Datasheet 2 Revision 1.00 2022-03-02

1 Package

Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Material of module baseplate Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI >200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 30 nH Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 1.5 mΩ Storage temperature Tstg -40 125 °C Mounting torque for module mounting M - Mounting according to valid application note M5, Screw 3 6 Nm Weight G 300 g Note: The current under continuous operation is limited to 50 A rms per connector pin.

2 IGBT , Inverter

Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continuous DC collector current ICDC Tvj max = 175 °C TC = 75 °C 200 A Repetitive peak collector current ICRM tp limited by Tvj op 400 A Gate-emitter peak voltage VGES ±20 V FS200R12N3T7 EconoPACK™3 module Datasheet 3 Revision 1.00 2022-03-02

Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 200 A, VGE = 15 V Tvj = 25 °C 1.55 1.80 V Tvj = 125 °C 1.69 Tvj = 175 °C 1.77 Gate threshold voltage VGEth IC = 4.6 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 3.34 µC Internal gate resistor RGint Tvj = 25 °C 0.75 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 40.3 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.14 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.016 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 200 A, VCE = 600 V, VGE = ±15 V, RGon = 3 Ω Tvj = 25 °C 0.172 µs Tvj = 125 °C 0.184 Tvj = 175 °C 0.192 Rise time (inductive load) tr IC = 200 A, VCE = 600 V, VGE = ±15 V, RGon = 3 Ω Tvj = 25 °C 0.063 µs Tvj = 125 °C 0.073 Tvj = 175 °C 0.074 Turn-off delay time (inductive load) tdoff IC = 200 A, VCE = 600 V, VGE = ±15 V, RGoff = 3 Ω Tvj = 25 °C 0.352 µs Tvj = 125 °C 0.442 Tvj = 175 °C 0.486 Fall time (inductive load) tf IC = 200 A, VCE = 600 V, VGE = ±15 V, RGoff = 3 Ω Tvj = 25 °C 0.092 µs Tvj = 125 °C 0.190 Tvj = 175 °C 0.254 Turn-on energy loss per pulse Eon IC = 200 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 3 Ω, di/dt = 2300 A/µs (Tvj = 175 °C) Tvj = 25 °C 25.5 mJ Tvj = 125 °C 30.3 Tvj = 175 °C 32.8 Turn-off energy loss per pulse Eoff IC = 200 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 3 Ω, dv/dt = 3100 V/µs (Tvj = 175 °C) Tvj = 25 °C 13.6 mJ Tvj = 125 °C 20.6 Tvj = 175 °C 26.7 (table continues...) FS200R12N3T7 EconoPACK™3 module Datasheet 4 Revision 1.00 2022-03-02

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 640 A tP ≤ 7 µs, Tvj=175 °C 600 Thermal resistance, junction to case RthJC per IGBT 0.231 K/W Thermal resistance, case to heat sink RthCH per IGBT , λgrease= 1 W/(m*K) 0.0690 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14.

3 Diode, Inverter

Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continuous DC forward current IF 200 A Repetitive peak forward current IFRM tP = 1 ms 400 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 5190 A²s Tvj = 175 °C 4690 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 200 A, VGE = 0 V Tvj = 25 °C 1.72 2.10 V Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Peak reverse recovery current IRM VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt =

2300 A/µs (Tvj = 175 °C)

Tvj = 25 °C 92.5 A Tvj = 125 °C 134 Tvj = 175 °C 149 (table continues...) FS200R12N3T7 EconoPACK™3 module Datasheet 5 Revision 1.00 2022-03-02

Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Recovered charge Qr VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 13 µC Tvj = 125 °C 27.3 Tvj = 175 °C 36.5 Reverse recovery energy Erec VR = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 3.65 mJ Tvj = 125 °C 8.94 Tvj = 175 °C 11.8 Thermal resistance, junction to case RthJC per diode 0.376 K/W Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) 0.0680 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14.

4 NTC-Thermistor

Table 7 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. FS200R12N3T7 EconoPACK™3 module Datasheet 6 Revision 1.00 2022-03-02

5 Characteristics diagrams

Output characteristic (typical), IGBT , Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT , Inverter IC = f(VCE) Tvj = 175 °C 100 150 200 250 300 350 400 100 150 200 250 300 350 400 Transfer characteristic (typical), IGBT , Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT , Inverter E = f(IC) RGoff = 3.0 Ω, RGon = 3.0 Ω, VCE = 600 V, VGE = ±15 V 5 6 7 8 9 10 11 12 13 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 100 120 FS200R12N3T7 EconoPACK™3 module Datasheet 7 Revision 1.00 2022-03-02

Switching losses (typical), IGBT , Inverter E = f(RG) IC = 200 A, VCE = 600 V, VGE = ±15 V Switching times (typical), IGBT , Inverter t = f(IC) RGoff = 3.0 Ω, RGon = 3.0 Ω, VCE = 600 V, VGE = ±15 V, Tvj = 175 0 3 6 9 12 15 18 21 24 27 30 100 150 200 250 0 50 100 150 200 250 300 350 400 0.01 0.1 Switching times (typical), IGBT , Inverter t = f(RG) IC = 200 A, VCE = 600 V, VGE = ±15 V, Tvj = 175 °C Voltage slope (typical), IGBT , Inverter dv/dt = f(RG) IC = 200 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 0 5 10 15 20 25 30 0.01 0.1 0 5 10 15 20 25 30 FS200R12N3T7 EconoPACK™3 module Datasheet 8 Revision 1.00 2022-03-02

Transient thermal impedance , IGBT , Inverter Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT , Inverter IC = f(VCE) Tvj = 175 °C, RGoff = 3.0 Ω, VGE = ±15 V 0.001 0.01 0.1 1 10 0.001 0.01 0.1 0 200 400 600 800 1000 1200 1400 100 200 300 400 500 Capacity characteristic (typical), IGBT , Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C Gate charge characteristic (typical), IGBT , Inverter VGE = f(QG) IC = 200 A, Tvj = 25 °C 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 100 1000 -15 -10 FS200R12N3T7 EconoPACK™3 module Datasheet 9 Revision 1.00 2022-03-02

Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 3.0 Ω, VR = 600 V 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 Switching losses (typical), Diode, Inverter Erec = f(RG) IF = 200 A, VR = 600 V Transient thermal impedance, Diode, Inverter Zth = f(t) 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 0.01 0.1 FS200R12N3T7 EconoPACK™3 module Datasheet 10 Revision 1.00 2022-03-02

Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 1000 10000 100000 FS200R12N3T7 EconoPACK™3 module Datasheet 11 Revision 1.00 2022-03-02

6 Circuit diagram

J Figure 1 FS200R12N3T7 EconoPACK™3 module Datasheet 12 Revision 1.00 2022-03-02

7 Package outlines

EconoPACK™3 module Datasheet 13 Revision 1.00 2022-03-02

8 Module label code

Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 FS200R12N3T7 EconoPACK™3 module Datasheet 14 Revision 1.00 2022-03-02

Revision history

Document revision Date of release Description of changes V1.0 2019-09-11 Target datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.00 2022-03-02 Final datasheet FS200R12N3T7 EconoPACK™3 module Datasheet 15 Revision 1.00 2022-03-02

All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-03-02 Published by Infineon Technologies AG

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© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAY224-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.