FS200R07A02E3_S6 INFINEON | Alldatasheet

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FS200R07A02E3_S6 FinalDataSheet V3.1,2019-10-11 AutomotiveHighPower

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 1Features/Description VCES = 700 V IC = 200 A TypicalApplications Description The HybridPACKTM DSC L is a very compact six-pack module targeting hybrid and electric vehicles. The module is based on Infineon’s long-term experience developing IGBT power modules and Trench-Field-Stop IGBTs including matching diodes with enhanced softness. Additionally, on-die integrated current sensors and module temperature sensors (2 x NTC) support to monitor the IGBT state. These features enable enhanced short-circuit protection and intelligent control of the system. The extreme compact package is realized by using Double Sided Cooling (DSC). This new assembly technology enables enhanced thermal and electrical performance at high reliability and mechanical robustness. Furthermore, this module allows combination with other existing Double Sided Cooling packages (e.g. HybridPACKTM DSC S) to extend the single inverter to a dual inverter configuration.

  • AutomotiveApplications
  • HybridElectricalVehicles(H)EV ElectricalFeatures
  • IncreasedBlockingVoltageCapabilityto700V
  • IntegratedCurrentSensor
  • LowInductiveDesign
  • Tvjop=150°C MechanicalFeatures
  • 2.5kVAC1minInsulation
  • Doublesidedcooling
  • Compactdesign
  • RoHScompliant
  • IntegratedNTCtemperaturesensor ProductName OrderingCode FS200R07A02E3_S6 SP001661220

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 2IGBT,Inverter 2.1MaximumRatedValues Parameter Conditions Symbol Value Unit Collector-emittervoltage Tvj = 25°C VCES 700 V ContinuousDCcollectorcurrent TC = 65°C, Tvj max = 150°C IC nom 200 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 694 W Gate-emitterpeakvoltage VGES +/-20 V 2.2CharacteristicValues min. typ. max. Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V VCE sat 1.45 1.60 1.70 2.25 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gatethresholdvoltage IC = 3.70 mA, VCE = VGE VGEth 5.00 5.80 6.50 VTvj = 25°C Gatecharge VGE = -15 V ... 15 V QG 2.20 µC Internalgateresistor RGint 2.0 ΩTvj = 25°C Inputcapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Cies 13.5 nFTvj = 25°C Reversetransfercapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Cres 0.36 nFTvj = 25°C Collector-emittercut-offcurrent VCE = 450 V, VGE = 0 V ICES 0.1 mATvj = 25°C Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C Turn-ondelaytime,inductiveload IC = 200 A, VCE = 300 V VGE = -8/+15 V RGon = 3.6 Ω td on 0.13 0.14 0.15 µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Risetime,inductiveload IC = 200 A, VCE = 300 V VGE = -8/+15 V RGon = 3.6 Ω tr 0.07 0.07 0.07 µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn-offdelaytime,inductiveload IC = 200 A, VCE = 300 V VGE = -8/+15 V RGoff = 3.6 Ω td off 0.48 0.52 0.53 µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Falltime,inductiveload IC = 200 A, VCE = 300 V VGE = -8/+15 V RGoff = 3.6 Ω tf 0.03 0.04 0.04 µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn-onenergylossperpulse IC = 200 A, VCE = 300 V, LS = 25 nH VGE = -8/+15 V, di/dt = 3000 A/µs (Tvj = 150°C) RGon = 3.6 Ω Eon 3.90 4.90 5.10 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Turn-offenergylossperpulse IC = 200 A, VCE = 300 V, LS = 25 nH VGE = -8/+15 V, du/dt = 2500 V/µs (Tvj = 150°C) RGoff = 3.6 Ω Eoff 6.80 8.20 8.50 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 1700 A Tvj = 150°C tP ≤ 6 µs, Thermalresistance,junctiontocase perIGBT ClampingForceF=700N RthJC 0.1801) K/W Thermalresistance,casetoheatsink perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) ClampingForceF=700N RthCH 0.1701) K/W Temperatureunderswitchingconditions top continuous Tvj op -40 150 °C 1) with double sided cooling, evaluation according to HybridPackTM DSC application note

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 3Diode,Inverter 3.1MaximumRatedValues Parameter Conditions Symbol Value Unit Repetitivepeakreversevoltage Tvj = 25°C VRRM 700 V ContinuousDCforwardcurrent IF 200 A Repetitivepeakforwardcurrent tP = 1 ms IFRM 400 A I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 1800 A²s 3.2CharacteristicValues min. typ. max. Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V VF 1.60 1.50 1.50 2.55 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Peakreverserecoverycurrent IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C) VR = 300 V VGE = -8 V IRM 96.0 130 140 A Tvj = 25°C Tvj = 125°C Tvj = 150°C Recoveredcharge IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C) VR = 300 V VGE = -8 V Qr 7.20 13.5 16.0 µC Tvj = 25°C Tvj = 125°C Tvj = 150°C Reverserecoveryenergy IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C) VR = 300 V VGE = -8 V Erec 1.70 3.30 3.80 mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Thermalresistance,junctiontocase perdiode ClampingForceF=700N RthJC 0.2801) K/W Thermalresistance,casetoheatsink perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) ClampingForceF=700N RthCH 0.2701) K/W Temperatureunderswitchingconditions top continuous Tvj op -40 150 °C 4Module Parameter Conditions Symbol Value Unit Isolationtestvoltage RMS, f = 50 Hz, t = 1min VISOL 2.5 kV Materialofmodulebaseplate Cu Internalisolation basicinsulation(class1,IEC61140) Al2O3 Creepagedistance terminaltoheatsink terminaltoterminal dCreep 2.8 mm Clearance terminaltoheatsink terminaltoterminal dClear 2.4 mm Comperativetrackingindex CTI > 600 min. typ. max. Strayinductancemodule LsCE 20 nH Storagetemperature Tstg -40 125 °C Terminalconnectiontorque ScrewM5 M - Nm Mounting force per clamp F 400 - 750 N Weight G 72 g 5CurrentSensor Parameter Conditions Symbol Min Typ Max Unit Outputvoltage VCE = 1.95 V, IC = 400 A Rsense = 1.60 Ω , Tvj = 25°C VGE=15V Vsense 0.26 V 1) with double sided cooling, evaluation according to HybridPackTM DSC application note

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 6NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Ratedresistance TC = 25°C R25 5.00 kΩ DeviationofR100 TC = 100°C, R100 = 493 Ω ΔR/R -5 5 % Powerdissipation TC = 25°C P25 20.0 mW B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote.

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 7CharacteristicsDiagrams outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V VCE [V] IC [A] 0,0 0,5 1,0 1,5 2,0 2,5 120 160 200 240 280 320 360 400 Tvj = 25°C Tvj = 125°C Tvj = 150°C outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C VCE [V] IC [A] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 100 150 200 250 300 350 400 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE [V] IC [A] 120 160 200 240 280 320 360 400 Tvj = 25°C Tvj = 125°C Tvj = 150°C switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=-8V/+15V,RGon=3.6Ω ,RGoff=3.6Ω ,VCE=300V IC [A] E [mJ] 120 160 200 240 280 320 360 400 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=-8/+15V,IC=200A,VCE=300V RG [Ω ] E [mJ] Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C transientthermalimpedanceIGBT,Inverter ZthJH=f(t) t [s] ZthJH [K/W] 0,001 0,01 0,1 0,01 0,1 ZthJH : IGBT ri[K/W]: τi[s]: 0,033 0,001 0,119 0,0304 0,189 0,1782 0,009 17,167 reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=-8/+15V,RGoff=3.6Ω ,Tvj=150°C VCE [V] IC [A] 100 200 300 400 500 100 200 300 400 500 IC, Modul forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] IF [A] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 150 225 300 375 450 525 600 675 750 Tvj = 25°C Tvj = 125°C Tvj = 150°C

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=3.6Ω ,VCE=300V IF [A] E [mJ] 100 150 200 250 300 350 400 Erec, Tvj = 125°C Erec, Tvj = 150°C switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=200A,VCE=300V RG [Ω ] E [mJ] Erec, Tvj = 125°C Erec, Tvj = 150°C transientthermalimpedanceDiode,Inverter ZthJH=f(t) t [s] ZthJH [K/W] 0,001 0,01 0,1 0,01 0,1 ZthJH : Diode ri[K/W]: τi[s]: 0,078 0,001 0,205 0,0257 0,255 0,1394 0,012 18,071

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 8Circuitdiagram Pin Number Symbol I/O Function P DC Supply (+) Positive Supply N DC Supply (-) Negative Supply U AC Output U Phase Output V AC Output V Phase Output W AC Output W Phase Output PS Output P Terminal Voltage Sensing (IGBT Collector) CS6 Output IGBT Current Sensor System 6 Output IGBT Emitter Output System 6 Input Gate Input System 6 CS5 Output IGBT Current Sensor System 5 Output IGBT Emitter Output System 5 Input Gate Input System 5 CS4 Output IGBT Current Sensor System 4 Output IGBT Emitter Output System 4 Input Gate Input System 4 Output NTC 1 + TG Ground NTC Ground Output NTC 2 + CS3 Output IGBT Current Sensor System 3 Output IGBT Emitter Output System 3 Input Gate Input System 3 CS2 Output IGBT Current Sensor System 2 Output IGBT Emitter Output System 2 Input Gate Input System 2 CS2 Output IGBT Current Sensor System 1 Output IGBT Emitter Output System 1 Input Gate Input System 1 PS Output P Terminal Voltage Sensing (IGBT Collector) (BottomDCB) (Top DCB)

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 9Packageoutlines

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet 10LabelCodes 10.1ModuleCode CodeFormat Data Matrix Encoding ASCII Text SymbolSize 16x16 Standard IEC24720 and IEC16022 CodeContent Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 11 12 - 19 20 - 21 22 - 23 Example(below) 71549 142846 55054991 Example 71549142846550549911530 10.2PackingCode CodeFormat Code128 Encoding Code Set A SymbolSize 34 digits Standard IEC8859-1 CodeContent Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X S Q Digit 2 - 9 12 - 19 21 - 25 28 - 31 33 - 34 Example(below) 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet RevisionHistory Major changes since previous revision

Revision History

Reference Date Description V1.0 2015-07-31 - V3.0 2016-12-13 final datasheet V3.1 2019-10-11 Change of ordering code number

FS200R07A02E3_S6 DoubleSideCooledModule V3.1,2019-10-11Final Data Sheet Terms&Conditionsofusage Edition2018-08-01 Publishedby InfineonTechnologiesAG 81726Munich,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoany examplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,Infineon Technologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementof intellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice (http://www.infineon.com) Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthe nearestInfineonTechnologiesOffice. Thesecomponentsarenotdesignedfor“specialapplications”thatdemandextremelyhighreliabilityorsafetysuchasaerospace,defenseorlife supportdevicesorsystems(ClassIIImedicaldevices).Ifyouintendtousethecomponentsinanyofthesespecialapplications,pleasecontact yourlocalrepresentativeatInternationalRectifierHiRelProducts,Inc.ortheInfineonsupport(https://www.infineon.com/support)toreview productrequirementsandreliabilitytesting. InfineonTechnologiescomponentsmaybeusedinspecialapplicationsonlywiththeexpresswrittenapprovalofInfineonTechnologies.Class IIImedicaldevicesareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Ifthey fail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Trademarks TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,EconoPACK™,CoolMOS™,CoolSET™,CORECONTROL™,CROSSAVE™,DAVE™, DI-POL™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPIM™,EconoPACK™,EiceDRIVER™,eupec™,FCOS™,HITFET™, HybridPACK™,I²RF™,ISOFACE™,IsoPACK™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PRO-SIL™,PROFET™,RASIC™,ReverSave™,SatRIC™,SIEGET™,SINDRION™, SIPMOS™,SmartLEWIS™,SOLIDFLASH™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. OtherTrademarks AdvanceDesignSystem™(ADS)ofAgilentTechnologies,AMBA™,ARM™,MULTI-ICE™,KEIL™,PRIMECELL™,REALVIEW™,THUMB™, µVision™ofARMLimited,UK.AUTOSAR™islicensedbyAUTOSARdevelopmentpartnership.Bluetooth™ofBluetoothSIGInc.CAT-iq™of FLEXGO™ofMicrosoftCorporation.FlexRay™islicensedbyFlexRayConsortium.HYPERTERMINAL™ofHilgraeveIncorporated.IEC™of CommissionElectrotechniqueInternationale.IrDA™ofInfraredDataAssociationCorporation.ISO™ofINTERNATIONALORGANIZATION FORSTANDARDIZATION.MATLAB™ofMathWorks,Inc.MAXIM™ofMaximIntegratedProducts,Inc.MICROTEC™,NUCLEUS™ofMentor MICROWAVEOFFICE™(MWO)ofAppliedWaveResearchInc.,OmniVision™ofOmniVisionTechnologies,Inc.Openwave™Openwave SystemsInc.REDHAT™RedHat,Inc.RFMD™RFMicroDevices,Inc.SIRIUS™ofSiriusSatelliteRadioInc.SOLARIS™ofSun Microsystems,Inc.SPANSION™ofSpansionLLCLtd.Symbian™ofSymbianSoftwareLimited.TAIYOYUDEN™ofTaiyoYudenCo. TEAKLITE™ofCEVA,Inc.TEKTRONIX™ofTektronixInc.TOKO™ofTOKOKABUSHIKIKAISHATA.UNIX™ofX/OpenCompanyLimited. VERILOG™,PALLADIUM™ofCadenceDesignSystems,Inc.VLYNQ™ofTexasInstrumentsIncorporated.VXWORKS™,WINDRIVER™of WINDRIVERSYSTEMS,INC.ZETEX™ofDiodesZetexLimited. Last update 2011-11-11

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