FS100R12N2T7_B15 INFINEON | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
- Electrical features - V CES = 1200 V - I C nom = 100 A / ICRM = 200 A - TRENCHSTOP TM IGBT7 - Low V CE,sat - Overload operation up to 175°C
- Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al 2O3 substrate with low thermal resistance - Solder contact technology Potential applications
- Auxiliary inverters
- Motor drives
- Servo drives Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J FS100R12N2T7_B15 EconoPACK™2 module Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.00 www.infineon.com 2021-11-19
FS100R12N2T7_B15 EconoPACK™2 module Table of contents Datasheet 2 Revision 1.00 2021-11-19
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Material of module baseplate Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI >200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 26 nH Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 2.7 mΩ Storage temperature Tstg -40 125 °C Mounting torque for module mounting M - Mounting according to valid application note M5, Screw 3 6 Nm Weight G 180 g Note: The current under continuous operation is limited to 50 A rms per connector pin.
2 IGBT , Inverter
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continuous DC collector current ICDC Tvj max = 175 °C TC = 95 °C 100 A Repetitive peak collector current ICRM tP = 1 ms 200 A Gate-emitter peak voltage VGES ±20 V FS100R12N2T7_B15 EconoPACK™2 module Datasheet 3 Revision 1.00 2021-11-19
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 Gate threshold voltage VGEth IC = 2.5 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 1.8 µC Internal gate resistor RGint Tvj = 25 °C 1.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 21.7 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.076 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.01 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 3.9 Ω Tvj = 25 °C 0.175 µs Tvj = 125 °C 0.192 Tvj = 175 °C 0.205 Rise time (inductive load) tr IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 3.9 Ω Tvj = 25 °C 0.046 µs Tvj = 125 °C 0.051 Tvj = 175 °C 0.053 Turn-off delay time (inductive load) tdoff IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.9 Ω Tvj = 25 °C 0.309 µs Tvj = 125 °C 0.389 Tvj = 175 °C 0.442 Fall time (inductive load) tf IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.9 Ω Tvj = 25 °C 0.104 µs Tvj = 125 °C 0.198 Tvj = 175 °C 0.248 Turn-on energy loss per pulse Eon IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 3.9 Ω, di/dt =
1650 A/µs (Tvj = 175 °C)
Tvj = 25 °C 10.5 mJ Tvj = 125 °C 14.7 Tvj = 175 °C 16.8 Turn-off energy loss per pulse Eoff IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 3.9 Ω, dv/dt =
3030 V/µs (Tvj = 175 °C)
Tvj = 25 °C 6.68 mJ Tvj = 125 °C 10.8 Tvj = 175 °C 12.8 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 370 A tP ≤ 7 µs, Tvj=175 °C 350 (table continues...) FS100R12N2T7_B15 EconoPACK™2 module Datasheet 4 Revision 1.00 2021-11-19
Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Thermal resistance, junction to case RthJC per IGBT 0.371 K/W Thermal resistance, case to heat sink RthCH per IGBT , λgrease= 1 W/(m*K) 0.135 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
3 Diode, Inverter
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continuous DC forward current IF 100 A Repetitive peak forward current IFRM tP = 1 ms 200 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 1260 A²s Tvj = 175 °C 1060 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 100 A, VGE = 0 V Tvj = 25 °C 1.72 2.10 V Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Peak reverse recovery current IRM VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 57.7 A Tvj = 125 °C 77.4 Tvj = 175 °C 88.3 Recovered charge Qr VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 6.9 µC Tvj = 125 °C 15.4 Tvj = 175 °C 19.4 (table continues...) FS100R12N2T7_B15 EconoPACK™2 module Datasheet 5 Revision 1.00 2021-11-19
Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Reverse recovery energy Erec VR = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 2.04 mJ Tvj = 125 °C 4.61 Tvj = 175 °C 6.66 Thermal resistance, junction to case RthJC per diode 0.592 K/W Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) 0.148 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
4 NTC-Thermistor
Table 7 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. FS100R12N2T7_B15 EconoPACK™2 module Datasheet 6 Revision 1.00 2021-11-19
5 Characteristics diagrams
output characteristic (typical), IGBT , Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT , Inverter IC = f(VCE) Tvj = 175 °C 100 125 150 175 200 100 125 150 175 200 Transfer characteristic (typical), IGBT , Inverter IC = f(VGE) VCE = 20 V switching losses (typical), IGBT , Inverter E = f(IC) RGoff = 3.9 Ω, RGon = 3.9 Ω, VGE = ±15 V, VCE = 600 V 5 6 7 8 9 10 11 12 13 100 120 140 160 180 200 0 25 50 75 100 125 150 175 200 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 7 Revision 1.00 2021-11-19
switching losses (typical), IGBT , Inverter E = f(RG) IC = 100 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT , Inverter t = f(IC) RGoff = 3.9 Ω, RGon = 3.9 Ω, VGE = ±15 V, VCE = 600 V, Tvj = 175 0 5 10 15 20 25 30 35 40 100 120 0 25 50 75 100 125 150 175 200 0.001 0.01 0.1 switching times (typical), IGBT , Inverter t = f(RG) VGE = ±15 V, IC = 100 A, VCE = 600 V, Tvj = 175 °C transient thermal impedance , IGBT , Inverter Zth = f(t) 0 5 10 15 20 25 30 35 40 0.01 0.1 0.001 0.01 0.1 1 10 0.01 0.1 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 8 Revision 1.00 2021-11-19
reverse bias safe operating area (RBSOA), IGBT , Inverter IC = f(VCE) RGoff = 3.9 Ω, VGE = ±15 V, Tvj = 175 °C Voltage slope (typical), IGBT , Inverter dv/dt = f(RG) IC = 100 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 0 200 400 600 800 1000 1200 1400 100 125 150 175 200 225 250 0 5 10 15 20 25 30 35 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 capacity characteristic (typical), IGBT , Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C gate charge characteristic (typical), IGBT , Inverter VGE = f(QG) IC = 100 A, Tvj = 25 °C 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 100 1000 -15 -10 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 9 Revision 1.00 2021-11-19
forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 3.9 Ω, VR = 600 V 100 125 150 175 200 0 25 50 75 100 125 150 175 200 switching losses (typical), Diode, Inverter Erec = f(RG) IF = 100 A, VR = 600 V transient thermal impedance , Diode, Inverter Zth = f(t) 0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 10 0.01 0.1 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 10 Revision 1.00 2021-11-19
temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 1000 10000 100000 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 11 Revision 1.00 2021-11-19
6 Circuit diagram
J Figure 1
7 Package outlines
FS100R12N2T7_B15 EconoPACK™2 module Datasheet 12 Revision 1.00 2021-11-19
8 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 FS100R12N2T7_B15 EconoPACK™2 module Datasheet 13 Revision 1.00 2021-11-19
Revision history
Document revision Date of release Description of changes 1.00 2021-11-19 Initial version FS100R12N2T7_B15 EconoPACK™2 module Datasheet 14 Revision 1.00 2021-11-19
All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-11-19 Published by Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAY144-003 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.