FS04D

FS04D ETC | Alldatasheet

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Technical content

4 Amp

FS04...D SURFACE MOUNT SCR These series of Silicon Controlled Rectifier use a high performance PNPN technology . These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology . Jun - 02 Absolute Maximum Ratings, according to IEC publication No. 134 On-state Current Average On-State Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature IT(RMS) PARAMETER CONDITIONS Min. Max. Unit DPAK (Plastic) Gate Trigger Current < 200 µA Off-State V oltage

200 V ÷ 600 V

IT(AV) ITSM I2t VGRM IGM PG(AV) Tj Tstg Tsld 180º Conduction Angle, TC = 115 ºC Half Cycle, Θ =180º, TC = 115 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz t = 10 ms, Half Cycle I GR = 10µA 20 µs max. 20 µs max. 20 ms max. 10s max 2.5 4.5 -40 -40 A A A A A V A W W ºC ºC ºC 1.2 0.2 +125 +150 260 Repetitive Peak Off State Voltage PARAMETER CONDITIONS VOLTAGE UnitSYMBOL VDRM VRRM RGK = 1 KΩ B 200 V D 400 ITSM PGM K A G A M 600

FS04...D SURFACE MOUNT SCR Jun - 02

Electrical Characteristics

PARAMETER CONDITIONS SENSITIVITY UnitSYMBOL IGT IDRM VD = 12 VDC , RL = 33Ω . Tj = 25 ºC µA 200 200 1.6 0.8 0.1 10 10 5 10 mA µA V V V mA mA V/µs MIN MAX MAX MAX MAX MAX MIN MAX MAX MIN MIN 50 A/µs / IRRM VTM VGT IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Critical Rate of Voltage Rise Critical Rate of Current Rise Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S=0.5 cm2) ºC/W ºC/W VD = VDRM , RGK = 220Ω , T j = 125 ºC Tj = 25 ºCVR = VRRM , at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω , Tj = 25 ºC IT = 50 mA , RGK = 1KΩ , Tj = 25 ºC IG = 1 mA , RGK = 1KΩ , Tj = 25 ºC VD = 0.67 x VDRM , RGK = 220Ω , Tj = 125 ºC PART NUMBER INFORMATION VGD VD =VDRM, RL = 3.3 KΩ , RGK = 220Ω Tj = 125 ºC FAGOR SCR CURRENT CASE VOLTAGE SENSITIVITY F S 04 01 B D 00 FORMING TR PACKAGING Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC IG = 2 x IGT

2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Igt (Tj) Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. -40 -20 0 60 80 100 120 140 Igt (Tj = 25 ºC) Ih (Tj) Ih (Tj = 25 ºC) 40 20 Tj (ºC) Ih Igt 1.00 0.10 0.01 K=[Zth(j-a) / Rth(j-a)] Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recommended pad layout) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 tp (s) Tamb (ºC) FS04...D SURFACE MOUNT SCR 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.5 1 1.5 P (W) Fig. 1: Maximum average power dissipation versus average on-state current 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 25 50 100 125 P (W) Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink+contact. T case (ºC) 125 Fig. 3: Average and DC on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) Jun- 02 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I T(AV) (A) 0 25 100 12550 75 2 2.5 3 Tamb (ºC)IT(AV)(A) 3.5 α 360 º 120 115 Rth= 37C/W Rth= 15C/W Rth= 10C/W Rth= 0C/W Rth= 5C/W α= 180º α = 180 º DC 1.0 0.5 0.2 0.1 K=[Zth(j-c) / Rth(j-c)] Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. 1E-3 1E-2 1E-1 1E+0 tp (s) α = 80 º

S(cm) Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). 100 I th(j-a) (ºC/W) 0 2 8 10 4 6 12 14 16 18 20 t(s) Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. 250 200 150 100 T(ºC) 0 40 160 200 80 120 240 280 320 360 215ºC 245ºC Epoxy FR4 board Metal-backed board 1 10 100 1000 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) Number of cycles Tj initial = 25 ºC F= 50Hz Jun - 02 FS04...D SURFACE MOUNT SCR tp(ms) ITSM(A). I2t (A2s) Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp <10 ms, and corresponding value of I2t. 100 1 10 Tj initial = 25 ºC ITSM 2 5 Fig. 8: On-state characteristics (maximum values). 50.0 10.0 ITM(A) 0 0.5 1 1.5 2 2.5 3 3.5 4 VTM(V) 1.0 0.1 Tj max Vto = 0.85 V Rd =90mΩ Tj=Tj max Tj25 ºC I2 t

FS04...D SURFACE MOUNT SCR PACKAGE MECHANICAL DATA DPAK TO 252-AA A b c D E e H L REF . DIMENSIONS Milimeters Min. Nominal Max. 2.18 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g 8º±2º E D b e 4.57 Typ. ø1x0.15 H 1.6 A 8º±2º8º±2º 8º±2º 8º±2º L 1.067±0.013 FOOT PRINT 6.7 6.7 1.6 2.3 2.3 1.6