FS02 ETC1 | Alldatasheet

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Technical content

1.25 Amp

FS02...N SURFACE MOUNT SCR These series of Silicon Controlled Rectifier use a high performance PNPN technology . These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology . Absolute Maximum Ratings, according to IEC publication No. 134 On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature IT(RMS) PARAMETER CONDITIONS Min. Max. Unit SOT223 (Plastic) Gate Trigger Current < 200 µA Off-State V oltage

200 V ÷ 800 V

IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. 10s max. 1.25 0.8 22.5 2.5 -40 -40 A A A A A2s V A W W ºC ºC ºC 1.2 0.2 +125 +150 260 * with 5 cm2 copper (e= 35µm) surface under tab. Jun - 02 Repetitive Peak Off State Voltage PARAMETER CONDITIONS VOLTAGE UnitSYMBOL VDRM VRRM RGK = 1 KΩ B 200 V D 400 M 600 N 800

FS02...N SURFACE MOUNT SCR PART NUMBER INFORMATION Jun - 02 FAGOR SCR CURRENT CASE VOLTAGE SENSITIVITY F S 02 01 B N 00 FORMING RB PACKAGING

Electrical Characteristics

On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current PARAMETER CONDITIONS SENSITIVITY UnitSYMBOL IGT IDRM VD = 12 VDC , RL = 140Ω , Tj = 25 ºC µA 500 1.45 0.9 150 0.8 0.1 µA V V mΩ V V mA mA V/µs MIN MAX MAX MAX MAX MAX MAX MAX MIN MAX MAX MIN MIN 50 A/µs / IRRM VTM VT(O) rd VGT IH IL dv / dt di / dt Rth(j-l) Rth(j-a) Critical Rate of Voltage Rise Critical Rate of Current Rise Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient ºC/W ºC/W VD = VDRM , RGK = 1KΩ , T j = 125 ºC Tj = 25 ºCVR = VRRM , at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC Tj = 125 ºC Tj = 125 ºC VD = 12 VDC , RL = 140Ω , Tj = 25 ºC IT = 50 mA , RGK = 1KΩ , Tj = 25 ºC IG = 1 mA , RGK = 1KΩ , Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ , Tj = 125 ºC 200 200 15 20 10 Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC IG = 2 x IGT VGD VD = VDRM , RL = 3.3KΩ , Tj = 125 ºC RGK = 1KΩ ,

FS02...N SURFACE MOUNT SCR 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 P (W) α 360 º Fig. 1: Maximum average power dissipation versus average on-state current 0 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 40 60 80 100 120 140 P (W) Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). T tab (ºC) -85 -95 -105 -115 -125 Fig. 3: Average on-state current versus tab temperature 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 Igt (Tj) Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. -40 -20 0 60 80 100 120 140 Igt (Tj = 25 ºC) Ih (Tj) Ih (Tj = 25 ºC) 40 20 Ih Igt 1 10 100 1000 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) Tj initial = 25 ºC 1.00 0.10 0.01 Zth(j-a) / Rth(j-a) Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Standard foot print, e (Cu) = 35 µm Jun - 02 Rth (j-l) Rth (j-a) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I T(AV) (A) 0 20 40 60 80 100 120 α = 180 º 10 30 50 70 90 110 130 DC 1.0 1.2 1.4 α = 30 º α = 60 º α = 90 º α = 120 º α = 180 º DC Tamb (ºC) Tj (ºC) Number of cycles tp (s)T lead (ºC) IT(AV)(A)

FS02...N Jun - 02 SURFACE MOUNT SCR PACKAGE MECHANICAL DATA SOT223 (Plastic) A B C D E F G H I J K REF . DIMENSIONS Milimeters Min. Typ. Max. Weight: 0.11 g FOOT PRINT 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35 3.3 1.5 1.5 (3x) 1 2.3 4.6 6.4 G F A 16º max. (4x) H D E I B C J 10º max. K Fig. 8: On-state characteristics (maximum values). 100 0.1 ITSM(A). I2t (A2s) Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I 2t. 100 ITM(A) Tj max Tj initial 25 ºC Tj max Vto = 1.05 V Rt = 0.150 Ω VTM(V) Tj initial = 25 ºC tp(ms) I2 t ITSM