FS01MR08A8MA2LBC INFINEON | Alldatasheet
Document overview
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- PDF pages: 20
Technical content
Features
- Electrical features - V DSS = 750 V - I DN = 620 A - New semiconductor material - silicon carbide - Low R DS,on - Low switching losses - Low Q g and Crss - Low inductive design - T vj,op = 175°C - Short-time extended operation temperature T vj,op = 200 °C
- Mechanical features - 4.2 kV DC 1 second insulation - High creepage and clearance distances - Compact design - High power density - Direct-cooled PinFin base plate - High-performance Si 3N4 ceramic - Guiding elements for PCB and cooler assembly - Integrated temperature sensing diode - PressFIT contact technology - RoHS compliant, lead-free - UL 94 V0 module frame Potential applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
- Motor drives
- Commercial, construction and agricultural vehicles (CAV) Product validation
- Qualified according to AQG 324, release no.: 03.1/2021
Description
HybridPACK™ Drive G2 module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2024-03-14
HybridPACK™ Drive G2 module Table of contents Datasheet 2 Revision 1.00 2024-03-14
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 0 Hz, t = 1 sec 4.20 kV Material of module baseplate Cu+Ni1) Internal isolation basic insulation (class 1, IEC 61140) Si3N4 Creepage distance dcreep terminal to heatsink 9.5 mm Creepage distance dcreep terminal to terminal 9.5 mm Clearance dclear terminal to heatsink 4.5 mm Clearance dclear terminal to terminal 4.5 mm Comparative tracking index CTI > 175 1) Ni plated Cu baseplate Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Maximum RMS module terminal current It,rms 900 A Heat-staking dome temperature1) THS tstaking < 10s 280 °C 1) Heat-staking according to application note AN-G2-ASSEMBLY. Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Pressure drop in cooling circuit Δp 50% water / 50% ethylenglycol, ΔV/Δt = 10 dm³/min, Tf = 60 °C 761) mbar Maximum pressure in cooling circuit p Tbaseplate < 40 °C 3.0 bar Tbaseplate ≥ 40 °C (relative pressure) 2.5 Stray inductance module Ls,DS 8.0 nH Module lead resistance, terminals - chip RDD'+SS' Tf = 25 °C, per switch 0.64 mΩ Storage temperature Tstg -40 125 °C Mounting torque for module mounting2) M Screw M4 baseplate to heatsink 1.8 2.0 2.2 Nm Screw EJOT Delta PCB to frame 0.45 0.50 0.55 Weight G 760 g 1) Cooler design and flow direction according to application note AN-G2-ASSEMBLY FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 3 Revision 1.00 2024-03-14
2) Screw types and torque according to application note AN-G2-ASSEMBLY
2 MOSFET
Table 4 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS continuous operation 750 V 10h over life time 900 DC drain current ID,nom VGS = 18 V, Tf = 65 °C Tvj,max = 175 °C 620 A Pulsed drain current ID,pulse verified by design, tp limited by Tvj,max 1240 A Gate-source voltage, max. static voltage VGS -5/19 V Gate-source voltage, max. transient voltage VGS Duty Cycle < 1 % (first transient maximum peak) -10/23 V Table 5 Recommended values Parameter Symbol Note or test condition Values Unit On-state gate voltage VGS(on) 15...18 V Off-state gate voltage VGS(off) -5...0 V Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-resistance RDS,on ID = 620 A, VGS = 18 V Tvj = 25 °C 1.03 1.69 mΩ Tvj = 125 °C 1.45 Tvj = 175 °C 1.80 Tvj = 200 °C 2.00 Drain-source on-resistance RDS,on ID = 620 A, VGS = 15 V Tvj = 25 °C 1.28 2.00 mΩ Tvj = 125 °C 1.65 Tvj = 175 °C 1.99 Tvj = 200 °C 2.21 Gate threshold voltage VGS,th ID = 200 mA, VGS = VDS, (tested after 1ms pulse at VGS = +20 V) Tvj = 25 °C 3.201) 3.90 4.55 V Total gate charge QG VDS = 470 V, VGS = -5/18 V 1.48 µC Internal gate resistor RG,int Tvj = 25 °C 0.53 Ω Input capacitance Ciss f = 1 MHz, VDS = 470 V Tvj = 25 °C 43 nF Output capacitance Coss f = 1 MHz, VDS = 470 V Tvj = 25 °C 2.85 nF (table continues...) FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 4 Revision 1.00 2024-03-14
Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Reverse transfer capacitance Crss f = 1 MHz, VDS = 470 V Tvj = 25 °C 0.25 nF COSS stored energy Eoss VDS = 470 V Tvj = 25 °C 1250 µJ Drain-source leakage current IDSX VGS = -5 V, VDSS = 750 V Tvj = 25 °C 100 µA Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Tvj = 25 °C 100 nA Turn-on delay time, inductive load td,on ID = 620 A, RG,on = 10.5 Ω, VGS = -5/18 V, VDS = 470 V Tvj = 25 °C 128 ns Tvj = 125 °C 107 Tvj = 175 °C 99 Tvj = 200 °C 96 Rise time (inductive load) tr ID = 620 A, RG,on = 10.5 Ω, VGS = -5/18 V, VDS = 470 V Tvj = 25 °C 108 ns Tvj = 125 °C 103 Tvj = 175 °C 101 Tvj = 200 °C 99 Turn-off delay time, inductive load td,off ID = 620 A, RG,off = 4.2 Ω, VGS = -5/18 V, VDS = 470 V Tvj = 25 °C 318 ns Tvj = 125 °C 339 Tvj = 175 °C 352 Tvj = 200 °C 359 Fall time (inductive load) tf ID = 620 A, RG,off = 4.2 Ω, VGS = -5/18 V, VDS = 470 V Tvj = 25 °C 53 ns Tvj = 125 °C 57 Tvj = 175 °C 58 Tvj = 200 °C 59 Turn-on energy loss per pulse Eon ID = 620 A, RG,on = 10.5 Ω, VGS = -5/18 V, VDS = 470 V, Lσ = 6.5 nH Tvj = 25 °C, di/dt = 4.7 kA/µs 27.60 mJ Tvj = 125 °C, di/dt = 4.9 kA/µs 26.40 Tvj = 175 °C, di/dt = 5 kA/µs 26.30 Tvj = 200 °C, di/dt = 5 kA/µs 26.30 (table continues...) FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 5 Revision 1.00 2024-03-14
Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-off energy loss per pulse Eoff ID = 620 A, RG,off = 4.2 Ω, VGS = -5/18 V, VDS = 470 V, Lσ = 6.5 nH Tvj = 25 °C, du/dt = 6 kV/µs 22.90 mJ Tvj = 125 °C, du/dt = 5.9 kV/µs 23.80 Tvj = 175 °C, du/dt = 5.8 kV/µs 24.30 Tvj = 200 °C, du/dt = 5.8 kV/µs 24.50 Short circuit data ISC VDD = 470 V, VGS = -5/18 V, RG,on = 10.5 Ω, RG,off = 4.2 Ω, VDSmax = VDSS-LsDS⋅di/dt tSC = 1.2 µs, Tvj = 200 °C 10000 A Short circuit data ISC VDD = 470 V, VGS = -5/15 V, RG,on = 10.5 Ω, RG,off = 4.2 Ω, VDSmax = VDSS-LsDS⋅di/dt tSC = 2 µs, Tvj = 200 °C 6500 A Thermal resistance, junction to cooling fluid2) Rth,j-f per MOSFET , 50% water / 50% ethylenglycol, ΔV/Δt = 10 dm³/min, Tf = 60 °C 0.107 0.1183) K/W Temperature under switching conditions Tvj,op continuous operation -40 175 °C extended operation 2004) 1) At 0h operating time. During inverter operation the value can be lower depending on Tvj, VGS(off), (switching frequency) fsw over lifetime. For a final assessment of VGS,th Min. value depending on customer application please contact the Infineon sales office for the necessary technical support by Infineon. 2) Cooler design and flow direction according to application note AN-G2-ASSEMBLY 3) EoL criteria see AQG324, verified by characterization with 4.5 sigma 4) For 100h cumulated over life time
3 Body diode (MOSFET)
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS continuous operation 750 V 10h over life time 900 DC body diode forward current IF,S Tvj,max = 175 °C, VGS = -5 V Tf = 65 °C 170 A Pulsed body diode current IF,S,pulse verified by design, tp limited by Tvj,max 1240 A FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 6 Revision 1.00 2024-03-14
Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF,SD IF,S = 620 A, VGS = -5 V Tvj = 25 °C 4.64 6.73 V Tvj = 125 °C 4.25 Tvj = 175 °C 4.09 Tvj = 200 °C 4.04 Peak reverse recovery current Irrm IF,S = 620 A, VGS = -5 V, VR,DS = 470 V Tvj = 25 °C 117 A Tvj = 125 °C 133 Tvj = 175 °C 152 Tvj = 200 °C 162 Recovered charge Qrr IF,S = 620 A, VGS = -5 V, VR,DS = 470 V Tvj = 25 °C 2.20 µC Tvj = 125 °C 3.60 Tvj = 175 °C 5.00 Tvj = 200 °C 5.70 Reverse recovery energy Erec IF,S = 620 A, VGS = -5 V, VR,DS = 470 V Tvj = 25 °C, -di/dt = 5.4 kA/µs 0.3 mJ Tvj = 125 °C, -di/dt = 5.6 kA/µs 0.5 Tvj = 175 °C, -di/dt = 5.7 kA/µs 0.8 Tvj = 200 °C, -di/dt = 5.8 kA/µs 0.9
4 Temperature sensor
Table 9 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Transient sense current ITS 10 mA Forward voltage VTS ITS = 0.2 mA, Tvj = 25 °C 2.574 2.624 2.674 V ITS = 0.2 mA, Tvj = 85 °C 2.169 2.234 2.299 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 7 Revision 1.00 2024-03-14
5 Characteristics diagrams
Pressure drop in cooling circuit (typical), Package Δp = f(ΔV/Δt) fluid = 50% water / 50% ethylenglycol , Tf = 60 °C Maximum allowed drain-source voltage, MOSFET VDSS = f(Tvj) verified by characterization / design, not by test 4 5 6 7 8 9 10 11 12 120 150 -50 -25 0 25 50 75 100 125 150 175 200 500 600 700 800 900 1000 Output characteristic (typical), MOSFET ID = f(VDS) VGS = 18 V Output characteristic (typical), MOSFET ID = f(VDS) Tvj = 25 °C -1240 -930 -620 -310 310 620 930 1240 155 310 465 620 775 930 1085 1240 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 8 Revision 1.00 2024-03-14
Drain-source on-resistance (typical), MOSFET RDS,on = f(Tvj) ID = 620 A, VGS = 18 V Drain-source on-resistance (typical), MOSFET RDS,on = f(ID) VGS = 18 V 25 50 75 100 125 150 175 200 0.90 1.20 1.50 1.80 2.10 2.40 -1240 -620 0 620 1240 0.90 1.20 1.50 1.80 2.10 2.40 Transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V Gate charge characteristic (typical), MOSFET VGS = f(QG) VDD = 470 V, Tvj = 25 °C 2 4 6 8 10 155 310 465 620 775 930 1085 1240 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 9 Revision 1.00 2024-03-14
Capacity characteristic (typical), MOSFET C = f(VDS) f = 1 MHz, VGS = -5/18 V, Tvj = 25 °C Switching losses (typical), MOSFET E = f(ID) VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V 0 150 300 450 600 750 0.1 100 0 310 620 930 1240 Switching losses (typical), MOSFET E = f(RG) ID = 620 A, VDS = 470 V, VGS = -5/18 V Current slope (typical), MOSFET di/dt = f(ID) VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V 0 5 10 15 20 25 30 100 125 150 0 310 620 930 1240 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 10 Revision 1.00 2024-03-14
Current slope (typical), MOSFET di/dt = f(RG) VDS = 470 V, ID = 620 A, VGS = -5/18 V Voltage slope (typical), MOSFET dv/dt = f(ID) VDS = 470 V, RG,off = 4.2 Ω, RG,on = 10.5 Ω, VGS = -5/18 V 0 5 10 15 20 25 30 0 310 620 930 1240 Voltage slope (typical), MOSFET dv/dt = f(RG) ID = 620 A, VDS = 470 V, VGS = -5/18 V Reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RG,off = 4.2 Ω, VGS = +18/-5 V, Tvj = 175 °C (1) for 10h over lifetime 0 5 10 15 20 25 30 0 200 400 600 800 1000 400 800 1200 1600 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 11 Revision 1.00 2024-03-14
Transient thermal impedance (typical), MOSFET Zth = f(t) ΔV/Δt = 10 dm³/min, fluid = 50% water/50% ethylenglycol , Tf = 60 °C Thermal impedance (typical), MOSFET Rth,j-f = f(dv/dt) fluid = 50% water/50% ethylenglycol , Tf = 60 °C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 4 6 8 10 12 14 0.100 0.102 0.104 0.106 0.108 0.110 0.112 0.114 0.116 0.118 Forward characteristic body diode (typical), MOSFET IF,S = f(VSD) Tvj = 25 °C Forward characteristic body diode (typical), MOSFET IF,S = f(VSD) VGS = -5 V 0 1 2 3 4 5 6 155 310 465 620 775 930 1085 1240 0 1 2 3 4 5 6 155 310 465 620 775 930 1085 1240 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 12 Revision 1.00 2024-03-14
Switching losses body diode (typical), MOSFET Erec = f(ISD) Vr = 470 V, RG,on = 10.5 Ω Switching losses body diode (typical), MOSFET Erec = f(RG) Vr = 470 V, IF,S = 620 A 0 310 620 930 1240 0.0 0.3 0.6 1.0 1.3 1.6 10 14 18 22 26 30 0.0 0.3 0.6 1.0 1.3 1.6 Temperature characteristic (typical), Temperature sensor VTS = f(Tvj) ITS = 0.2 mA -50 -25 0 25 50 75 100 125 1.50 2.00 2.50 3.00 3.50 4.00 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 13 Revision 1.00 2024-03-14
6 Circuit diagram
W TS3+ TS1+ TS2+ TS1- TS2- TS3- S6.2 S6.1 S5.2 S5.1 V S2.1 S2.2 S4.1 S4.2 S3.2 S3.1 S1.2 U S1.1 Figure 1 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 14 Revision 1.00 2024-03-14
7 Package outlines
H-H ( 2 : 1 ) L ( 4 : 1 ) S ( 2 : 1 ) Y-Y ( 2 : 1 ) principle view H H L S YY 4,1\0,1 (4,5) j 0,4ABC 59°95,6639 4,1\0,1nB A 8x j n 0,3ABC 04,37 7,37 46,2 51,7 54,7 57,95 59,7 31,47 36,97 39,97 78,8 84,3 87,3 90,55 92,3 6x (heatstaking dome) j 0,8A BC 0,1\0,1756x Refered to nearest heatstaking dome (D1;D3-D5;D7;D8 only). Dome D2 and D6 without functionality. 4\0,1 D2 D3 D6D7 0,1 6x n 2x (HS4;HS8) j n1,2A BC 4,9\0,26x 2,5) dimensioned for EJOT Delta PT WN5451 30x10 (valid for PCB 1,6 ±0,16) C 15,8 j n1,2A BC 2,6 74,1 79,4 82,8 026 46,2 1,13 21 49,271 68 78,8 15,5 66,5 90,75 9,75 6 -0,3 d 0,8 ABC j 1,0ABC j 1,0 ABC d 0,8ABC 6,35 j 1,0 ABC4\0,34x 8,5\` 0,3 (22,44) (5,32) (4,52) (7,27)(15,17) (6,4) (9,84) (2,385) rotation bar to center of powertab (7,6) A5A7 A6A8 A2 A3 A4 (15,7) 4,5 n 0,15 A1 to A8 Dome positions (6x) for PCB assembly additionally checked by pin gauge (8,5) Drawing: W00202300_07 Acc. to ISO 8015 HS1 HS3 HS4 HS8 HS7 HS5 Figure 2 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 15 Revision 1.00 2024-03-14
(4,1) C (n4,1)B 2,6 79,4 114,25 120,25 22,25 95,6639 59° 26,4 20,6 49,271 67,6 j 1,0A BC U;V;W 1,5\0,16x 07,610,1 j 1,0 ABC A 07,6 1,5\0,13x j 1,0A BC 04,37 21,4 40,4 51,7 6,6 25,6 36,97 53,6 72,6 84,3 14\0,26x j 0,7 CZA j 1,2 ABC 14\0,23x j 1,0A BC N1-N3;P1-P3 j 1,0ABC j n0,6 CZA j n1,2 ABC A1 A2 A3 A4 A7 A6 A1 to A8 Drawing: W00202299_08 Acc. to ISO 8015 6,2n \`0,1 Figure 3 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 16 Revision 1.00 2024-03-14
L ( 4:1 ) L S6.1G6 S6.2 S4.1 S4.2 S2.1G2 S2.2 S1.2 G1 S1.1 TS1+ TS1- S3.2 G3 S3.1 TS2+ TS2- S5.2 G5 S5.1 TS3+ TS3- (4,1)n B 95,6639 59° 014,5 26,65 30,7 34,75 12,25 16,3 20,35 32,5 59,25 63,3 67,35 79,5 18,85 53,85 63,02 63,82 65,75 69,85 1,65 11,35 26,65 30,7 34,75 12,25 16,3 20,35 35,65 45,35 49,271 59,25 63,3 67,35 82,65 (4,1) C A No pin higher than heatstaking dome All pin positions checked with pin gauge according to Application Note A1 to A8 Drawing: W00201873_05 Acc. to ISO 8015 Figure 4 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 17 Revision 1.00 2024-03-14
8 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example Packing label code Code format Barcode Code128 Encoding Code Set A Symbol size 34 digits Standard IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Identifier X S Q Digit 2 – 9 12 – 19 21 – 25 28 – 31 33 – 34 Example 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15 7154914284655054991153071549142846550549911530 Figure 5 FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 18 Revision 1.00 2024-03-14
Revision history
Document revision Date of release Description of changes 0.10 2022-04-06 Initial version 0.11 2023-01-19 Target datasheet 0.20 2023-06-20 Preliminary datasheet 1.00 2024-03-14 Final datasheet FS01MR08A8MA2LBC HybridPACK™ Drive G2 module Datasheet 19 Revision 1.00 2024-03-14
All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-03-14 Published by Infineon Technologies AG
81726 Munich, Germany
© 2024 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABD901-004 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.