FS0102BA ETC2 | Alldatasheet

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0.8 Amp

FS01...A/B SENSITIVE GATE SCR This series of Silicon Controlled Rectifiers uses a high performance PNPN technology . This part is intended for general purpose applications where high gate sensitivity is required. Feb - 01 Absolute Maximum Ratings, according to IEC publication No. 134 On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature IT(RMS) PARAMETER CONDITIONS Min. Max. Unit Gate Trigger Current < 200 µA Off-State V oltage

200 V ÷ 600 V

IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld All Conduction Angle, TL = 60 ºC Half Cycle, Θ = 180 º, TL = 60 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C t = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. 1.6 mm from case, 10s max. 0.8 0.5 0.24 -40 -40 A A A A A V A W W ºC ºC ºC 0.1 +125 +150 260 Repetitive Peak Off State Voltage PARAMETER CONDITIONS VOLTAGE UnitSYMBOL VDRM VRRM Tj = -40 to +125 ºC, RGK = 1 KΩ V B 200 D 400 GG K TO92 (Plastic) RD26 (Plastic) A K A M 600

FS01...A/B SENSITIVE GATE SCR Feb - 01

Electrical Characteristics

On-state Threshold Voltage On-state slope Resistance Gate Trigger Voltage Holding Current Latching Current PARAMETER CONDITIONS SENSITIVITY UnitSYMBOL IGT IDRM VD = 12 VDC , RL = 140Ω , Tj = 25 ºC µA 200 100 1.93 0.95 600 0.8 µA V V mΩ V mA mA V/µs MIN MAX MAX MAX MAX MAX MAX MAX MAX MAX MIN MIN TYP MAX 500 200 150 A/µs ns µs / IRRM VTM VT(TO) rT VGT IH IL dv / dt di / dt tgd tq Rth(j-l) Rth(j-a) Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-Off Time Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient ºC/W ºC/W VD = VDRM , RGK = 1KΩ , T j = 125 ºC Tj = 25 ºCVR = VRRM , at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC Tj = 125 ºC Tj = 125 ºC VD = 12 VDC , RL = 140Ω , Tj = 25 ºC IT = 50 mA , RGK = 1KΩ , Tj = 25 ºC IG = 1 mA , RGK = 1KΩ , Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ , Tj = 125 ºC IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 125 ºC IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 25 ºC ITM = 3x IT(AV) VD = VDRM ITM = 3x IT(AV) VR = 35 V di/dt = 10 A/µs tp = 100 µs dv/dt = 10 V/µs Tj = 125 ºC VD = 67% VDRM RGK = 1KΩ PART NUMBER INFORMATION FAGOR SCR CURRENT PACKAGE: A: TO92 B: RD26 VOLTAGE SENSITIVITY F S 01 02 B A

0 0.1 0.8 0.6 0.4 0.2 P (W) IT(AV)(A)α = 30 º α = 60 º α = 90 º α = 120 º α = 180 º DC α 360 º Fig. 1: Maximum average power dissipation versus average on-state current 0 20 0.8 0.6 0.4 0.2 40 60 80 100 120 140 P (W) Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). T lead (ºC) -45 -65 -85 -105 -125 Tamb (ºC) Rth (j-a) Rth (j-l) 0.8 0.6 0.4 0.2 I T(AV) (A) Fig. 3: Average on-state current versus lead temperature 0 20 40 60 80 100 120 140 DC α = 180 º T lead (ºC) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 Igt (Tj) Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. -40 -20 0 60 80 100 120 140 Igt (Tj = 25 ºC) Ih (Tj) Ih (Tj = 25 ºC) 40 20 Ih Tj (ºC) Igt 1 10 100 1,000 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) Tj initial = 25 ºC Number of cycles 1.00 0.10 0.01 Zth(j-a) / Rth(j-a) Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 tp (s) FS01...A/B SENSITIVE GATE SCR

FS01...A/B SENSITIVE GATE SCR 5.0 Ih(Rgk) Fig. 9: Relative variation of holding current versus gate-cathode resistance (typical values). 1.0E+00 Ih(Rgk = 1kΩ ) 1.0 0.1 Tj = 25 ºC Rgk (Ω ) 0.1 1 1.5 2 2.5 3 3.5 Fig. 8: On-state characteristics (maximum values). ITM(A) 4 4.5 5 5.5 Tj max Vto = 0.95 V Rt = 0.600Ω VTM(V) Tj max Tj initial 25 ºC 100 0.1 ITSM(A). I2t (A2s) Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I 2t. Tj initial = 25 ºC tp(ms) I2 t ITSM PACKAGE MECHANICAL DATA TO92 (Plastic) A B C D E F G H a b REF . DIMENSIONS Milimeters Min. Typ. Max. Marking: type number Weight: 0.2 g PACKAGE MECHANICAL DATA RD26 (Plastic) 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 A B C D E F G a b REF . DIMENSIONS Millimeters Min. Typ. Max. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g A BC D G b E F H a C D G A a B E F 45º b