FRM5W232BS FUJITSU | Alldatasheet

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Technical content

FEATURES

  • 2.5Gb/s APD Receiver module in an industry standard mini-DIL package
  • High Sensitivity: -34 dBm (typ.)
  • High Differential Electrical Output
  • Power Overload: -4dBm (typ.)
  • Integral Thermistor and GaAs IC Preamp
  • Wide operating temperature range (-40 to +85°C)

APPLICATIONS

This APD detector preamp is intended to function as an optical receiver in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuits. The detector preamplifier is DC coupled and has a differential electrical output.

DESCRIPTION

The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD) detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. The BS package is designed for a surface mount PC board assembly. Edition 1.1 June 2002 InGaAs-APD/Preamp Receiver FRM5W232BS Parameter Storage Temperature Operating Case Temperature Supply Voltage Symbol Tstg -40 to +85 -40 to +85 0 to +4.5 V °CTop VDD APD Reverse Voltage 0 to VB (Note) VVR APD Reverse Current 2m AIR(peak) Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Note: Since the VB may vary from device to device, VB data is attached to each device for reference.

OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, VDD=+3.3V unless otherwise specified) UnitLimits Max.Min. Typ. Test Conditions V3.3Power Supply Voltage VDD 3.453.15 kΩ10Thermistor Resistance Rth 10.59.5 K3900Thermistor B Constant B 40003800 mA-Power Supply Current ISS 70- dB-Optical Return Loss ORL -30 APD Responsivity R15 A/W -0.8 0.851,550nm, M=1 R13 A/W -0.75 0.851,310nm, M=1 dBm-32.0- -33.0 Ta=-40 to +85°C Sensitivity Pr dBm-34.0 -33.0- 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25°C Maximum Overload Po dBm--5 -4 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at M=3, Ta=-40 to +85°C Bandwidth BW GHz -2.2 2.5 AC-Coupled, RL=50Ω, M=10, -3dBm from 1MHz Equivalent Input Noise Current Density in pA Hz 8.5- 7.0AC-Coupled, RL=50Ω, Average in 1.8GHz AC Transimpedance Zt kΩ-- 2.0AC-coupled, f=100MHz, RL=50Ω Temperature Coefficient of VB γ V/°C0.08 0.150.12(Note 1) APD Breakdown Voltage VB V40 65 50ID=10µA Note: (1) γ=∆VB/∆Tc

1.2±0.07 (0.5) 0.3±0.05 ∅4.1±0.2 ∅0.9±0.1 9.77±0.15 See Lead Detail (R0.7) 0.50±0.15 0.4±0.05 (P2.54x3) 7.62±0.2 0~10° Detail of Lead Note The fiber length (L) shall be specified in the detail (individual) specification. 7.37±0.15 L Unit: mm 5.2MAX. (2.0) (0.5) (#1) (#4) (#5) (#8) Top View Pin Description 1. VPD 2. GROUND 3. DATA 4. GROUND 5. THERMISTOR 6. -DATA 7. GROUND 8. VDD InGaAs-APD/Preamp Receiver FRM5W232BS Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. “BS” PACKAGE UNIT: mm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200