FRM450D INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 10A, 500V, RDS(on) = 0.600Ω
  • Second Generation Rad Hard MOSFET Results From New Design Concepts
  • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)
  • Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically - Survives 2E12 Typically If Current Limited to IDM
  • Photo Current - 30nA Per-RAD(Si)/sec Typically
  • Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm - Usable to 3E13 Neutrons/cm2

Description

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm 2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur- rent limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified FRM450D, R, H UNITS Continuous Drain Current A A Maximum Power Dissipation 150 1.20 W W W/oC oC Lead Temperature (During Soldering) June 1998 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207| Copyright © Intersil Corporation 1999

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

Post-Radiation Electrical SpecificationsTC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TYPE TEST CONDITIONS LIMITS UNITSMIN MAX Drain-Source Breakdown Volts (Note 4, 6) BVDSS FRM450D, R VGS = 0, ID = 1mA 500 - V (Note 5, 6) BVDSS FRM450H VGS = 0, ID = 1mA 475 - V Gate-Source Threshold Volts (Note 4, 6) VGS(th) FRM450D, R VGS = VDS, ID = 1mA 2.0 4.0 V (Note 3, 5, 6) VGS(th) FRM450H VGS = VDS, ID = 1mA 1.5 4.5 V Gate-Body Leakage Forward (Note 4, 6) IGSSF FRM450D, R VGS = 20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF FRM450H VGS = 20V, VDS = 0 - 200 nA Gate-Body Leakage Reverse (Note 2, 4, 6) IGSSR FRM450D, R VGS = -20V, VDS = 0 - 100 nA (Note 2, 5, 6) IGSSR FRM450H VGS = -20V, VDS = 0 - 200 nA Zero-Gate Voltage Drain Current (Note 4, 6) IDSS FRM450D, R VGS = 0, VDS = 400V - 25 µA (Note 5, 6) IDSS FRM450H VGS = 0, VDS = 400V - 100 µA Drain-Source On-State Volts (Note 1, 4, 6) VDS(on) FRM450D, R VGS = 10V, ID = 10A - 6.3 V (Note 1, 5, 6) VDS(on) FRM450H VGS = 16V, ID = 10A - 9.0 V Drain-Source On Resistance (Note 1, 4, 6) RDS(on) FRM450D, R VGS = 10V, ID = 6A - 0.600 Ω (Note 1, 5, 6) RDS(on) FRM450H VGS = 14V, ID = 6A - 0.860 Ω NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12 5. Gamma = 1000KRAD(Si). Neutron = 3E12 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 12/18/89 on TA 17655 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988 FRM450D, FRM450R, FRM450H

Typical Performance Characteristics FRM450D, FRM450R, FRM450H

FRM450D, FRM450R, FRM450H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 FRM450D, FRM450R, FRM450H TO-204AA JEDEC TO-204AA HERMETIC STEEL PACKAGE ØD Ø b A SEATING PLANE ØP Ø b1 s q R 1 R e e1L A 1 TERM. 3 SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.310 0.330 7.88 8.38 - A1 0.060 0.065 1.53 1.65 - Øb 0.038 0.042 0.97 1.06 2, 3 Øb 1 0.138 0.145 3.51 3.68 - ØD - 0.800 - 20.32 - e 0.215 TYP 5.46 TYP 4 e1 0.430 BSC 10.92 BSC 4 ØP 0.155 0.160 3.94 4.06 - q 1.187 BSC 30.15 BSC - R 0.495 0.525 12.58 13.33 - R 1 0.131 0.185 3.33 4.69 - s 0.655 0.675 16.64 17.14 - NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-204AA outline dated 11-82. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bot- tom of seating plane. 5. Controlling dimension: Inch. 6. Revision 2 dated 6-93.