FRM430 ISC
Document overview
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- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FRM430
DESCRIPTION
- 3A, 500V, RDS(on) = 2.5Ω
- Second Generation Rad Hard MOSFET Results From New Design Concepts
APPLICATIONS
It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 3 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor FRM430
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS= 0; ID= 1mA 500 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.0 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 2A 2.5 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 1 mA VSD Diode Forward Voltage IF= 3A; VGS= 0 1.8 V PDF pdfFactory Pro www.fineprint.cn