FRM3200CC FAIRCHILD | Alldatasheet
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. 84 De Bsyese74 0027850 2 i eT nee ne EE . . . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27850 D - ee FRM3200CC Series 7-97-17. FAIRCHILD Ultra-fast POWERpianar™ ; A Schlumberger Company Rectifiers 32 A, 50-200 V i Powor And Discrate Division Description TO-2044A Designed for use in switching power supplies, inverters : and as free-wheeling diodes, these state-of-the-art devices have the following features: © Ultrafast 35 ns Reverse Recovery Time © Sott Recovery (S > 0.5) » © Low tryrec) © 180°C Operating Junction Temperature or © Popular TO-204AA Package (Formerly TO-3) FrMaz0sce © Low Vew FRM32100C : FRM3215CC FRM32200C i : Maximum Ratings : : ymbot| Rating ____| Frwaa0sce] rrmaaseco| rrwsatecc] ermszzeco| | unt i Van | Peak Repetitive Reverse Voltage 50 100 150 780 Vv : Vasm | Non-repstitive Peak Reverse Voltage 50 400 160 200 : Va DC Blocking Voltage 50 400 450 10 : Tru | Average Rectified Forward Current, A To= 107°C, Rated Va cam | Peak Repetitive Forward Current A Rated Vp, Square Wave, 50 kHz, . To = 107°C : Trou | Non-repetitive Peak Surge Current per A Diode, Surge Applied at Rate Load Conditions Halfwave, Single Phase, !
60 Hz :
Ta Taig | Operating Junction Temperature and =55 to =85 to 765 to =85 to *c Storage Temperature +150 +150 +150 +150 : Maximum Thermal Characteristics Rac | Maximum Thermal Resistance, 70 *c7w Junction to Case Raa | Maximum Thermal Resistance, Junction to Ambient Notes Fortnormation concerning connection dlagram and packago outing, eer fo Section 7. i EERE i 2-63 |
84 DE Bpsuese74 ooazasa y PP . ' 1 i: | i _ 3469674 FAIRCHILD SEMICONDUCTOR 84D 27851 Dam j FRM3200CC Series | 703-19 ee | Electrical Characteristics per Diode ‘ Vem! Maximum Instantaneous Forward Voltage per Diode Ip= 16 A, Te= 180°C 0.80 0.80 0.80 0.80 v Ip=16 A, To = 25°C 0.95 0.95 0.95 0.95 laau’ | Maximum Instantaneous Reverse Current per Diode | Rated DC Voltage, To = 125°C mA Rated DC Voltage, To = 25°C uA te Maximum Reverse Recovery Time Ip=1.0 A, de/dt= 50 A/us ns p= 16 A, di/dt = 100 A/us Inecy* | Maximum Reverse Recovery Current Ip=16 A, dip/dt = 100 A/S, A Vr = VaRM + Notes 1 Pulse Test Pulse Wisth= 900 4s. Duly Cyto <2.0% 2 S20 Figura 10 for tet coniions. ‘Performance Curves per Diode Figure 1 Maximum Forward Voltage Drop Figure 2. Maximum Power Dissipation | “
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I 7 —— a | = Reverse Power Losses Included ee a ee AY A | Z| lA a 2 oe | [endo det! 1 fi-=t_| Ae ie EPZT Awe || 1 OT PN : Ea FS EREREPAZZa 2 — Ss & TIA
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i on | i DAA | Ze all AT TT | MATT rr a rT a FORWARD VOLTAGE OROP —V AVERAGE CURRENT — A el 264
Figure 3. Transient Thermal Resistance Figure 4 Typical Reverse Leakage Current .